Results 81 to 90 of about 25,827,177 (224)

Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor

, 2021
We report the effect of stress or strain on the electronic characteristics of a normally off AlGaN/GaN high electron mobility transistor (HEMT) and demonstrate its role as a highly sensitive pressure sensor.
Hong-Quan Nguyen, Nguyen, NT, Abu Riduan Md Foisal, Nguyen, HQ, Jarred Fastier-Wooller, Fastier-Wooller, J, Dao, DV, Nam-Trung Nguyen, Tanner, P, Nguyen, TH, Phan, HP, Nguyen, TK, Nguyen, T, Thanh Nguyen, Tuan-Khoa Nguyen, Dzung Viet Dao, Hoang-Phuong Phan, Foisal, ARM, Philip Tanner, Tuan-Hung Nguyen   +19 more
core   +1 more source

Toward 4R Electronics: Liquid‐Metal‐Enabled Thin Film, and Field‐Effect Transistors for Sustainability and E‐Waste Reduction

Advanced Materials Technologies, Volume 11, Issue 7, 6 April 2026.
The 4R principle—Resilience, Repairability, Recyclability, and Renewability—enables sustainable liquid‐metal transistors. LM materials provide stretchable, damage‐tolerant architectures, allow rapid circuit repair, permit full material recovery through dissolution, and support renewable fabrication cycles, forming a closed‐loop pathway toward ...
Elahe Parvini, Abdollah Hajalilou
wiley   +1 more source

Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile

IEEE Transactions on Electron Devices
The forward bias gate leakage current and forward gate breakdown voltage are important properties of p-GaN gate high-electron-mobility transistors (HEMTs). An engineered doping profile in the p-GaN layer results in a higher gate breakdown voltage and a lower forward bias gate leakage current.
Mojtaba Alaei, Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert, Benoit Bakeroot   +5 more
openaire   +2 more sources

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim, Yu‐Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Electronic Transport in AlGaN/GaN Nanowires Under Ultraviolet Excitation and Edge Depletion Effect, Studied in a Wide Temperature Range

Nano Select, Volume 7, Issue 2, February 2026.
Electronic transport in AlGaN/GaN nanowires (NW) was studied under ultraviolet excitation in a wide temperature range. Significant changes in the conductivity of the structures were revealed and explained by the modulation of the space charge limited current (SCLC) effect. Temperature‐dependent measurements of transport and noise properties using noise
Svetlana Vitusevich, Vladislav V. Kaliuzhnyi, Mykola D. Tymochko, Alexander E. Belyaev   +3 more
wiley   +1 more source

Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping

IEEE Transactions on Electron Devices
This article presents a comprehensive analytical framework for modeling p-GaN gate high-electron-mobility transistors (HEMTs) based on rigorous solution of the Poisson and Schrodinger equations. It focuses primarily on the calculation of the 2-D electron gas (2DEG), voltage variation across the junction (Delta V-j), and AlGaN barrier ( Delta V-b) for ...
Mojtaba Alaei, Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert, Benoit Bakeroot   +5 more
openaire   +2 more sources

Impact of Growth Temperature and Al/N Ratio on AlN Films Grown by Radio‐Frequency Molecular Beam Epitaxy on GaN Templates

physica status solidi (b), Volume 263, Issue 2, February 2026.
The growth mechanism of AlN films for high electron mobility transistors passivation is systematically investigated via radio‐frequency molecular beam epitaxy. While high‐temperature growth (700 °C) utilizes excess aluminum as a surfactant forming surface droplets, low‐temperature growth (300 °C) traps excess aluminum as defective metallic interlayers.
Trang Nakamoto, Yuma Kawakami, Takashi Fujii, Momoko Deura, Tsutomu Araki   +4 more
wiley   +1 more source

Exceptional Gate Overvoltage Robustness in P-Gate GaN HEMT with Integrated Circuit Interface

The narrow gate overvoltage margin of classical enhancement-mode p-gate GaN high electron mobility transistors (HEMT). is a major concern in both soft and hard switching applications.
Wang, Bixuan, Mukherjee, Kalparupa, Zhang, Yuhao, Longobardi, Giorgia, Efthymiou, Loizos, Song, Qihao, Popa, Daniel, Udrea, Florin   +7 more
core   +1 more source

Field Emission Control via Work Function Modulation in Semimetallic Graphene Edge Cathodes

Small, Volume 22, Issue 10, 17 February 2026.
Graphene edge cathodes, with atomically sharp edges, high carrier mobility, and electrostatically tunable electronic structure, enable a nanoscale vacuum transistor whose off‐channel gate directly modulates the emitter work function. The device achieves gate‐tunable current saturation from 10 to 300 K, low leakage, and amplification behavior enabled by
Cheul Hyun Yoon, Jun Yeong Choe, Yeong Jin Ahn, Gil Su Jeon, Byoung Don Kong   +4 more
wiley   +1 more source

A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design

, 2008
We propose and fabricate an A1GaN/GaN high electron mobility transistor （HEMT） on sapphire substrate using a new kind of electron beam （EB） lithography layout for the T-gate.
Chen Zhigang, Zhang Renping, Yang Fuhua, Li Jinmin, Luo Weijun, Wang Xiaoliang, Zhang Yang   +6 more
core