Results 81 to 90 of about 2,431 (179)

Impact of Growth Temperature and Al/N Ratio on AlN Films Grown by Radio‐Frequency Molecular Beam Epitaxy on GaN Templates

physica status solidi (b), Volume 263, Issue 2, February 2026.
The growth mechanism of AlN films for high electron mobility transistors passivation is systematically investigated via radio‐frequency molecular beam epitaxy. While high‐temperature growth (700 °C) utilizes excess aluminum as a surfactant forming surface droplets, low‐temperature growth (300 °C) traps excess aluminum as defective metallic interlayers.
Trang Nakamoto, Yuma Kawakami, Takashi Fujii, Momoko Deura, Tsutomu Araki   +4 more
wiley   +1 more source

Miller-Current Suppressing Technology for False Turn-On Protection of Commercial p-GaN HEMTs

IEEE Journal of the Electron Devices Society
Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) feature low ON resistance and low gate-input capacitance, so that they can serves as power switches with switching frequency from several MHz to tens of MHz level.
Ziheng Liu, Jiayin He, Hongjie Peng, Ju Gao, Wenbo Xia, Chengkang Ao, Jinyan Wang, Maojun Wang, Jin Wei, Yong Xie   +9 more
doaj   +1 more source

Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs [PDF]

, 2020
An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully ...
Zhang, Yuhao, Yuhao Zhang, Zhang, Ruizhe, Liu, Jingcun, Ruizhe Zhang, Jingcun Liu, Kozak, Joseph P., Joseph P. Kozak, Ming Xiao, Xiao, Ming   +9 more
core   +1 more source

Field Emission Control via Work Function Modulation in Semimetallic Graphene Edge Cathodes

Small, Volume 22, Issue 10, 17 February 2026.
Graphene edge cathodes, with atomically sharp edges, high carrier mobility, and electrostatically tunable electronic structure, enable a nanoscale vacuum transistor whose off‐channel gate directly modulates the emitter work function. The device achieves gate‐tunable current saturation from 10 to 300 K, low leakage, and amplification behavior enabled by
Cheul Hyun Yoon, Jun Yeong Choe, Yeong Jin Ahn, Gil Su Jeon, Byoung Don Kong   +4 more
wiley   +1 more source

Co-optimized e-mode AlGaN/GaN HEMT with composite p-GaN recessed cap and etched doped buffer for simultaneous DC and RF performance enhancement [PDF]

Serbian Journal of Electrical Engineering
This study presents a theoretical analysis of the DC and RF characteristics of enhancement mode (E-mode) AlGaN/GaN High Electron Mobility Transistor (HEMT) utilizing symbiotic integration of advanced techniques e.g. composite gate structure with slightly
Al Fahad Abdullah, Jawad Md. Nafis, Talukder Arnab, Rahman Ifty Mohaiminur, Kabir Md. Maharaj   +4 more
doaj   +1 more source

Contact Modeling and Analysis of InAs HEMT Transistors [PDF]

, 2011
Novel device concepts and better channel materials than Si are required to improve the performance of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs).
Povolotskyi, Michael, Park, Seung Hyun, M. Povolotsky, Park, Hong Hyun, Hong-Hyun Park, Park, Hong-Hyun, G. Klimeck, T. Kubis, Kubis, Tillmann, Seung Hyun Park, Steiger, Sebastian, S. Steiger, Klimeck, Gerhard, Salmani-Jelodar, Mehdi, M. Salmani-Jelodar   +14 more
core   +2 more sources

Ferroelectric HZO Thin Films for FEFETs: Crystal Structure‐Device Performance Relationship

Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
Crystal Structure of HZO Thin Films Methods of Thin Film Deposition 1T‐FeFET Design Influence on Ferroelectric Properties FeFET Applications Recent Advances and Challenges ORTHORHOMBIC HEARTBEAT. Abstract The rapid development of hafnium zirconium oxide (HZO) thin films has established ferroelectric field‐effect transistors (FeFETs) as strong ...
Harsha Ragini Aturi, Ramana Murthy Gajula, Deepshikha Rathore   +2 more
wiley   +1 more source

Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors

AIP Advances
In this research work, the pivotal role of threshold voltage (Vth) in the performance optimization of enhancement-mode (E-mode) AlGaN/GaN-based high-electron-mobility transistors (HEMTs) is explored.
Bang-zhi Xiao, Yin-shui He, Wen-bo Xiao
doaj   +1 more source

Trapping and leakage mechanisms in GaN devices [PDF]

, 2022
reservedIn questo lavoro intendiamo discutere i risultati riguardo l'instabilità della tensione di soglia e i fenomeni di leakage su HEMT con struttura di gate p-GaN/AlGaN/GaN.
BENATO, ANDREA
core  

Analysis and Design of a DC‐to‐24 GHz Compact High‐Speed Inductor‐less SPDT Switch

Electronics Letters, Volume 62, Issue 1, January/December 2026.
ABSTRACT A compact DC‐to‐24 GHz single‐pole, double‐throw switch with enhanced isolation, low insertion loss and high‐speed performance, by adopting a multiple series‐shunt structure, has been presented in this letter. The mechanism of multiple series‐shunt structures of the switch on isolation and insertion loss are analysed. To verify the feasibility,
Jiashu Guo, Ding He, Peng Wu, Zhongjun Yu   +3 more
wiley   +1 more source