Results 101 to 110 of about 25,827,177 (224)

Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT [PDF]

, 2017
In this paper, the short-circuit robustness of a normally off GaN HEMT is investigated in relation to applied bias conditions and pulse duration. The results align with previous studies on normally-on devices in highlighting an electrical type of failure.
Oeder, Thorsten, Pfost, Martin, Thorsten Oeder, Alberto Castellazzi, Martin Pfost, Castellazzi, Alberto   +5 more
core   +1 more source

Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications

, 2017
An extended gate-AlGaN/GaN high electron mobility transistor (EG-AlGaN/GaN HEMT) with a high sensitivity for bioassay has been developed.
Wu, BJ, Jiadong Li, 李加东, Baojun Wu, Ding, XZ, 吴东岷, Zhang, J(张鉴), Wu, DM(吴东岷), Wang, H, Li, JD(李加东), Miao, B, Jian Zhang, Wenhui Lu, Gu, ZQ, Hu, YM, Yimin Hu, Lu, WH, Bin Miao, Dongmin Wu, Zhiqi Gu, Hong Wang, Xiangzhen Ding   +21 more
core   +1 more source

High-Performance Ultraviolet Photodetector Arrays Based on Recessed-Gate HEMT with a Buried p‑GaN Layer

GaN, due to its large band gap and high carrier mobility, has been widely used in fast-response ultraviolet (UV) photodetectors (PDs). The existing junction-based and two-dimensional electron gas (2DEG)-based devices have different focuses on the ...
Chuankai Liu (11005279), Yu Wang (12152), Wei Gao (2085), Xiaozhou Wang (9573339), Hao Qian (154985), Zhaoqiang Zheng (1465447), Lixiang Han (11212586), Hangzan Liu (16648191), Jingbo Li (124294)   +8 more
core   +1 more source

High I_ON and I_ON/I_OFF Ratio Enhancement-Mode Buried p-Channel GaN MOSFETs on p-GaN Gate Power HEMT Platform

, 2020
Enhancement-mode (E-mode) buried p-channel GaN metal-oxide-semiconductor field-effect-transistors (p-GaN-MOSFET's) with threshold voltage (VTH) of-1.7 V, maximum ON-state current (ION) of 6.1 mA/mm and ION/IOFF ratio of 107 are demonstrated on a standard
Zheng, Zheyang, Song, Wenjie, Yang, Song, Wei, Jin, Zhang, Li, Chen, Kevin J.   +5 more
core   +1 more source

A Dynamic Two-Stage Gate Driver for Unlocking the Fast-Switching Potential of GaN HEMT

The gate terminal of mainstream Schottky-type p-GaN gate high-electron-mobility transistor (HEMT) is particularly vulnerable to the gate voltage ringing during the fast-switching transient due to its narrow gate voltage headroom for safe operation.
Shu, Ji, Wu, Xinke, Chen, Kevin J., Sun, Jiahui   +3 more
core   +1 more source

An All-GaN Semiconducting-Gate HEMT for Inherent Gate-Level High-Voltage Protection and Synchronous Switching with Photoelectrically Enhanced Conductivity

We demonstrate a normally-off n-GaN/p-GaN/AlGaN/GaN HEMT featuring a semiconducting gate (SG), i.e., an n-GaN layer overlaying the 2DEG channel as an intrinsic gate and connected to an extrinsic electrode outside the active region.
Zheng, Zheyang, Song, Wenjie, Yang, Song, Feng, Sirui, Zhang, Li, Chen, Kevin J., Chen, Tao, Geng, Yutao, Zhang, Haochen   +8 more
core   +1 more source

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate

2024 IEEE International Reliability Physics Symposium (IRPS)
In this work, a random telegraph noise (RTN) analysis has been carried out, to the best of our knowledge, for the first time to characterize the defects activated by forward-biased gate stress in GaN-HEMTs with metal/pGaN Schottky gate. The RTN signal has been measured for both gate leakage (IG) and drain current (ID), after each stress phase until the
Millesimo M., Fiegna C., Bakeroot B., Borga M., Posthuma N., Decoutere S., Sangiorgi E., Tallarico A. N.   +7 more
openaire   +2 more sources

3D simulation study of decoupled dual-gate p-GaN power HEMT with high forward threshold voltage and low reverse conduction loss

To improve the threshold voltage (Vth) of the enhanced GaN HEMT device, mitigate the risk of false turn-on due to crosstalk between high-side and low-side HEMTs, and decouple the reverse turn-on voltage (VRT) from the gate-source voltage to minimize ...
Jinwei Hu, Jiangfeng Du, Chengyi Liu, Yapeng Zhao, You Li   +4 more
core   +1 more source

Simulation and optimization of enhanced back-gated GaN-based HEMT ultraviolet photodetector with a high photo-to-dark current ratio

AIP Advances
In this work, the performance of an innovative structure of an enhanced back-gated GaN-based HEMT ultraviolet photodetector is investigated using Silvaco Atlas.
Wulong Yuan, Xianyun Liu, Di Yang, Jun Yao, Chenglong Lu   +4 more
doaj   +1 more source

GaN/Si Hetero-Structure Integration of Complementary Logic Inverter for Power Conversion

IEEE Journal of the Electron Devices Society
The paper demonstrates a GaN/Si hetero-structure integration of complementary logic inverter for power conversion, combining a GaN $n$ -channel high-electron-mobility transistor (HEMT) and a Si $p$ -channel metal-oxide-semiconductor field-effect ...
Ang Li, Weisheng Wang, Yunsong Xu, Jihong Ding, Yong Wang, Yingfei Sun, Jiakai Zhang, Guohao Yu, Wen Liu, Xiaodong Zhang, Yong Cai, Kaixuan He, Zhongming Zeng, Baoshun Zhang   +13 more
doaj   +1 more source