Results 101 to 110 of about 2,431 (179)
Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique
Applied Physics ExpressAbstract Improved p-GaN gate reliability is achieved through a simple oxygen compensation technique (OCT), which involves oxygen plasma treatment after gate opening and subsequential wet etching. The OCT compensates for the Mg acceptors near the p-GaN surface, leading to an extended depletion region under the same gate bias and thus ...
Chengcai Wang +3 more
openaire +2 more sources
Gate Uzunluğunun Gan Hemt Aygıtlarda Güç Performansına Etkisi [PDF]
, 2014 This work has combined epitaxial growth, fabrication and characterization efforts to develop a GaN based high electron mobility transistors (HEMT).
Toprak, Ahmet
core
Suppressed gate leakage and enlarged gate over-drive window of E-mode p-GaN gate double channel HEMTs [PDF]
A 600-V p-GaN gate double channel HEMT (DC-HEMT) is presented with a systematic investigation of the gate characteristics, including the leakage current, breakdown, and reliability under forward bias stress.
Zheng, Zheyang +5 more
core +1 more source
Room Temperature Rejuvenation Technology for Irradiated Gallium Nitride Transistors
Advanced Materials Technologies, Volume 10, Issue 24, December 17, 2025.High temperature annealing has been the main defect mitigation technology since the Bronze age. We propose a room temperatureannealing technique that could be effective for electrically conducting materials. The new technique is demonstrated on a Gallium Nitride high electron mobility transistor undergoing radiation damage.
Md Hafijur Rahman +6 more
wiley +1 more source
MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC [PDF]
, 2006 AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with a high-mobility GaN thin layer as a channel are grown on high resistive 6H-SiC substrates by metalorganic chemical vapor deposition.
Li Jianping +11 more
core
Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.An extremely thin h‐BN passivation layer and an air spacer are employed in the fabrication of GaN‐based HEMTs. While the DC characteristics of the h‐BN‐passivated GaN‐based HEMTs are identical to those of conventional SiN‐passivated devices, the RF performance is improved due to the formation of the air spacer and the reduction of parasitic ...
Sung‐Jae Chang +16 more
wiley +1 more source
E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs [PDF]
, 2020 In this work, we demonstrate a GaN-based p-n junction gate (PNJ) HEMT featuring an n-GaN/ p-GaN/AlGaN/GaN gate stack. Compared to the more conventional p-GaN gate HEMT with a Schottky junction between the gate metal and p-GaN layer, the p-n junction can ...
Wang, Chengcai +7 more
core +1 more source
Power Electronic Devices and ComponentsThe characterization of crystal defects inside GaN epi layers, especially dislocations, is of major interest to further improve the performance and reliability of GaN high-electron-mobility transistor (HEMT) devices. This work presents a new approach for
Patrick Diehle +6 more
doaj +1 more source
A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance [PDF]
, 2013 In this letter, a double-gate AlGaN/GaN high electron mobility transistor operated in a synchronized switching mode is demonstrated, and improved dynamic performances are obtained.
Cai, Yong +16 more
core
High-Performance Ultraviolet Photodetector Arrays Based on Recessed-Gate HEMT with a Buried p‑GaN Layer [PDF]
GaN, due to its large band gap and high carrier mobility, has been widely used in fast-response ultraviolet (UV) photodetectors (PDs). The existing junction-based and two-dimensional electron gas (2DEG)-based devices have different focuses on the ...
Chuankai Liu (11005279) +8 more
core +1 more source