Results 111 to 120 of about 25,827,177 (224)

Effect of Hole-Injection on Leakage Degradation in ap-GaN Gate AlGaN/GaN Power Transistor

, 2018
The gate structure of a p-(Al)GaN gate AlGaN/GaN high electron mobility transistor (HEMT) is a direct bandgap hetero-PN junction, which emits light under forward bias above the threshold voltage.
Tanner, Philip, Li, Baikui, Dimitrijev, Sima, Han, Jisheng, Moghadam, Hamid Amini, Amini Moghadam, Hamid, https://orcid.org/, Tang, Xi   +7 more
core   +1 more source

On-Wafer Gate Screening Test for Improved Pre-Reliability in p-GaN HEMTs

Micromachines
In this paper, preliminary gate reliability of p-GaN HEMTs under high positive gate bias is studied. Gate robustness is of great interest both from an academic and industrial point of view; in fact, different tests and models can be explored to estimate the device lifetime, which must meet some minimum product requirements, as specified by ...
Giovanni Giorgino, Cristina Miccoli, Marcello Cioni, Santo Reina, Tariq Wakrim, Virgil Guillon, Nossikpendou Yves Sama, Pauline Gaillard, Mohammed Zeghouane, Hyon-Ju Chauveau, Maria Eloisa Castagna, Aurore Constant, Ferdinando Iucolano, Alessandro Chini   +13 more
openaire   +2 more sources

An Analytical Investigation on the Charge Distribution and Gate Control in the Normally-Off GaN Double-Channel MOS-HEMT

, 2018
A systematic analytical investigation of the charge distribution and gate control of the normally-off GaN double-channel MOS-HEMT (DC-MOS-HEMT) is presented in this paper.
Baikui Li, Kevin J. Chen, Wei, Jin, Li, Baikui, Meng Zhang, Chen, Kevin J., Zhang, Meng, Jin Wei, Xi Tang, Tang, Xi   +9 more
core   +1 more source

Normally Off AlGaN/GaN MIS-HEMTs with Self-Aligned p-GaN Gate and Non-Annealed Ohmic Contacts via Gate-First Fabrication

Micromachines
This study introduces an enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) featuring a self-aligned p-GaN gate structure, fabricated using a gate-first process.
Yinmiao Yin, Qian Fan, Xianfeng Ni, Chao Guo, Xing Gu   +4 more
doaj   +1 more source

Gate Driver Design for SiC Power MOSFETs With a Low-Voltage GaN HEMT for Switching Loss Reduction and Gate Protection

The design of gate drivers for silicon carbide (SiC) power mosfets needs to address various adverse effects induced by the parasitic inductance in the gate loop, such as false turn-on, gate overstress, and reduced switching speed.
Zheng, Zheyang, Shu, Ji, Chen, Kevin J., Sun, Jiahui   +3 more
core   +1 more source

Monolithic 650-V dual-gate p-GaN bidirectional switch

This article is about the study and characterization of a monolithically integrated dual-gate bidirectional switch (BDS) realized in a CMOS-compatible gallium nitride (GaN) pilot line.
Fabris, E., Fabris, Elena, Decoutere, S., Borga, M., Cosnier, T., Syshchyk, O., Chatterjee, Urmimala, Cosnier, Thibault, Chatterjee, U., Syshchyk, Olga, Baratella, Giulio, Bakeroot, Benoit, Borga, Matteo, Decoutere, Stefaan   +13 more
core   +1 more source

Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias

, 2018
An increase in OFF-state leakage current in p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs), induced by ON-state gate bias, was observed and reported in this paper.
Tanner, Philip, Li, Baikui, Dimitrijev, Sima, Wang, Jiannong, Han, Jisheng, Li, Hui, Moghadam, Hamid Amini, Amini Moghadam, Hamid, https://orcid.org/, Tang, Xi   +9 more
core   +1 more source

Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure

Micromachines
This study demonstrates a particular composited barrier structure of high-electron-mobility transistors (HEMTs) with an enhancement mode composed of p-GaN/GaN/AlN/AlGaN/GaN. The purpose of the composite barrier structure device is to increase the maximum
An-Chen Liu, Yu-Wen Huang, Hsin-Chu Chen, Hao-Chung Kuo   +3 more
doaj   +1 more source

TCAD Simulations of Degradation Mechanism in p-GaN Gate HEMTs under Gate Stress

2026 IEEE International Reliability Physics Symposium (IRPS)
In this paper we perform physical simulations of p-GaN gate HEMTs to study the time-dependent-gate-breakdown (TDGB) phenomenon when subject to constant-voltage stress (CVS). Leveraging on the advanced capabilities of Ginestra TCAD software, we show for the first time a simulation methodology able to model and explain the onset of gate breakdown ...
De Ruvo, Edoardo, Guerrieri, Simona Donati, Bonani, Fabrizio, Cornigli, Davide, Larcher, Luca   +4 more
openaire   +1 more source

Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess

, 2015
An enhancement-mode GaN double-channel MOS-HEMT (DC-MOS-HEMT) was fabricated on a double-channel heterostructure, which features a 1.5-nm AlN layer (AlN-ISL) inserted 6 nm below the conventional barrier/GaN hetero-interface, forming a lower channel at ...
Gaofei Tang, Wei, Jin, Li, Baikui, Mengyuan Hua, Liu, Shenghou, Hua, Mengyuan, Xi Tang, Yunyou Lu, Shenghou Liu, Baikui Li, Kevin J. Chen, Chen, Kevin J., Tang, Gaofei, Cheng Liu, Lu, Yunyou, Zhaofu Zhang, Zhang, Zhaofu, Liu, Cheng, Jin Wei, Tang, Xi   +19 more
core   +1 more source