Results 91 to 100 of about 25,827,177 (224)

E-Mode p-GaN Gate Punch-Through HEMT with Robust Non-Destructive Drain Breakdown

This work presents an E-mode p-GaN gate punch-through HEMT (PT-HEMT) which could achieve repetitive non-destructive breakdown, addressing the long-standing issue in conventional GaN HEMTs - the lack of avalanche robustness.
Lao, Yunhong, Liu, Sihang, Wei, Jin, Wang, Maojun, Chen, Kevin J., Yang, Han, Yang, Xuelin, Shen, Bo, Yu, Jingjing, Yang, Junjie   +9 more
core   +1 more source

High-current-density high-voltage normally-off AlGaN/GaN hybrid-gate HEMT with low on-resistance

, 2010
A high-voltage normally-off AlGaN/GaN hybrid-gate HEMT (HG-HEMT) with high current-density and low on-resistance on Si substrate is fabricated. The proposed device features a hybrid-gate consisting of a short E-mode gate and a long D-mode gate.
Zhou, C., C. Zhou, K.J. Chen, W. Chen, Chen, K. J., Chen, W.   +5 more
core   +1 more source

Ferroelectric HZO Thin Films for FEFETs: Crystal Structure‐Device Performance Relationship

Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
Crystal Structure of HZO Thin Films Methods of Thin Film Deposition 1T‐FeFET Design Influence on Ferroelectric Properties FeFET Applications Recent Advances and Challenges ORTHORHOMBIC HEARTBEAT. Abstract The rapid development of hafnium zirconium oxide (HZO) thin films has established ferroelectric field‐effect transistors (FeFETs) as strong ...
Harsha Ragini Aturi, Ramana Murthy Gajula, Deepshikha Rathore   +2 more
wiley   +1 more source

Analog/RF and Distortion Characteristics of Recessed Superjunction AlGaN/GaN HEMTs

IET Circuits, Devices &Systems, Volume 2026, Issue 1, 2026.
In this work, we investigate the impact of the recessed height of the i‐gallium nitride (GaN) layer on the performance of superjunction AlGaN/GaN high electron mobility transistors (HEMTs). The recessed height (h) of the superjunction layer is systematically varied from 0 to 30 nm while keeping all other device dimensions and biasing conditions ...
Nahida Banu, Chandrima Mondal, Abhijit Biswas, Harsupreet Kaur   +3 more
wiley   +1 more source

Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique

Applied Physics Express
Abstract Improved p-GaN gate reliability is achieved through a simple oxygen compensation technique (OCT), which involves oxygen plasma treatment after gate opening and subsequential wet etching. The OCT compensates for the Mg acceptors near the p-GaN surface, leading to an extended depletion region under the same gate bias and thus ...
Chengcai Wang, Junting Chen, Zuoheng Jiang, Haohao Chen   +3 more
openaire   +2 more sources

Switching Transient Analysis for Normally-off GaN Transistor With p-GaN Gate in a Phase-Leg Circuit

, 2019
Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky junction (between gate electrode and the p-GaN layer) and a p-GaN ...
Chen, Wenjie, Wei, Jin, Wang, Hanxing, Xu, Guangzhao, Xie, Ruiliang, Chen, Kevin J., Yang, Xu, Tian, Mofan, Wang, Laili, Wang, Yuru, Zhang, Feng   +10 more
core   +1 more source

A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives

Power Electronic Devices and Components
The characterization of crystal defects inside GaN epi layers, especially dislocations, is of major interest to further improve the performance and reliability of GaN high-electron-mobility transistor (HEMT) devices. This work presents a new approach for
Patrick Diehle, Frank Altmann, Susanne Hübner, Johannes Bruckmeier, Richard Neumann, Manuel Stabentheiner, Clemens Ostermaier   +6 more
doaj   +1 more source

Next generation of ICeGaNⓇ for superior no load and light load performance

Power Electronic Devices and Components
The ICeGaNⓇ technology aims at enabling widespread adoption of GaN HEMTs in power applications through a monolithic solution that offers an increased VGS(th) (2.9 V) and a wide ON-state gate driving range of 9 V to 20 V.
Kalparupa Mukherjee, Jin Zhang, Kaspars Ledins, Carlos Toyos Bada, Nirmana Perera, Loizos Efthymiou, Sheung Wai Fung, Martin Arnold, Giorgia Longobardi, Florin Udrea   +9 more
doaj   +1 more source

E-mode digitally recessed p-NiO tri-junction HEMT with VBR of 2.5 kV [PDF]

APL Electronic Devices
In this work, an AlGaN/GaN high electron mobility transistor (HEMT) with a large positive threshold voltage (VTH) is demonstrated, based on a digitally recessed barrier combined with a p-type NiO/SiO2 gate dielectric stack to form a recessed tri-junction
Amirhossein Esteghamat, Mohammad Rezaei, Jon Elipe Fonollosa, Yuan Zong, Victor Boureau, Gulnaz Ganeeva, Elison Matioli   +6 more
doaj   +1 more source

Suppressed gate leakage and enlarged gate over-drive window of E-mode p-GaN gate double channel HEMTs

A 600-V p-GaN gate double channel HEMT (DC-HEMT) is presented with a systematic investigation of the gate characteristics, including the leakage current, breakdown, and reliability under forward bias stress.
Zheng, Zheyang, Cheng, Yan, Zhang, Li, Chen, Kevin J., Chen, Tao, Liao, Hang   +5 more
core   +1 more source