Results 91 to 100 of about 2,431 (179)

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation

Scientific Reports
A metal-insulator-semiconductor (MIS) GaN high electron mobility transistor (HEMT) utilizing a dual-channel structure is demonstrated for enhancement-mode (E-mode) operation using the Synopsys Sentaurus™ technology computer-aided design (TCAD) simulator.
Kang Hee Lee, Yeonsil Yang, Junseok Heo, Jang Hyun Kim   +3 more
doaj   +1 more source

Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile

IEEE Transactions on Electron Devices
The forward bias gate leakage current and forward gate breakdown voltage are important properties of p-GaN gate high-electron-mobility transistors (HEMTs). An engineered doping profile in the p-GaN layer results in a higher gate breakdown voltage and a lower forward bias gate leakage current.
Mojtaba Alaei, Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert, Benoit Bakeroot   +5 more
openaire   +2 more sources

A LLM‐Guided Approach for Active‐Clamped Flyback Converter of Power Processing Units in Electric Propulsion

IET Electric Power Applications, Volume 20, Issue 1, January/December 2026.
In this work, a large language model (LLM)‐guided design framework which utilise the general purpose LLM and tested in design an active‐clamped flyback (ACF) converter for EP‐PPU is introduced. ABSTRACT Electric propulsion (EP), recognised for its high efficiency compared to chemical alternatives, plays an indispensable role in modern spacecraft ...
Minghai Dong, Hui Li, Shan Yin, Jinshu Lin, Honglang Zhang, Zhenni Zeng, Yuhua Cheng   +6 more
wiley   +1 more source

Recent Advances in Hybrid, Plug‐In, Battery, and Fuel Cell EVs: Control Schemes, Modes, Converter Topologies, and Pros and Cons

IET Electrical Systems in Transportation, Volume 2026, Issue 1, 2026.
Direct current (DC)–DC converters are the backbone of electric vehicle (EV) power trains, enabling efficient and bidirectional energy flow between the battery, high‐voltage (HV) DC link, and auxiliary rails under tight isolation, gain, ripple, and electromagnetic interference (EMI) constraints.
Abhilash Sakhare, Suresh Mikkili, Praveen Kumar Bonthagorla, Fabio Crescimbini   +3 more
wiley   +1 more source

A Dynamic Two-Stage Gate Driver for Unlocking the Fast-Switching Potential of GaN HEMT [PDF]

The gate terminal of mainstream Schottky-type p-GaN gate high-electron-mobility transistor (HEMT) is particularly vulnerable to the gate voltage ringing during the fast-switching transient due to its narrow gate voltage headroom for safe operation.
Shu, Ji, Wu, Xinke, Chen, Kevin J., Sun, Jiahui   +3 more
core   +1 more source

Caratterizzazione mediante misure dinamiche e di elettroluminescenza di dispositivi AlGaN/GaN HEMT con elettrodo di gate trasparente [PDF]

, 2022
In questo lavoro di tesi si sono studiate, principalmente attraverso misure di elettoluminescenza e prove dinamiche, le caratteristiche di dispositivi HEMT su GaN dotati di struttura di gate innovativa (ITO e Ni/ITO) confrontandole con quelle di ...
Bellesini, Mirko
core  

Design of a Highly Efficient and Wideband Power Amplifier With a New Microstrip Low‐Pass Filter

International Journal of RF and Microwave Computer-Aided Engineering, Volume 2026, Issue 1, 2026.
In this letter, a highly efficient and wideband power amplifier (PA) is proposed based on resistive–resistive series of continuous modes (Res‐Res SCMS) with a new microstrip low‐pass filter (LPF). By employing a conventional real‐to‐real impedance transformer, the output and input matching networks are realized by incorporating the transistor′s ...
Minshi Jia, Yaxing Liu, Zhigang Zhou, Tiansong Deng, Xiaomei Zhao, Xiao Wang, Haoming Yan, Vicente E. Boria   +7 more
wiley   +1 more source

Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping

IEEE Transactions on Electron Devices
This article presents a comprehensive analytical framework for modeling p-GaN gate high-electron-mobility transistors (HEMTs) based on rigorous solution of the Poisson and Schrodinger equations. It focuses primarily on the calculation of the 2-D electron gas (2DEG), voltage variation across the junction (Delta V-j), and AlGaN barrier ( Delta V-b) for ...
Mojtaba Alaei, Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert, Benoit Bakeroot   +5 more
openaire   +2 more sources

Broadband GaN Doherty Power Amplifier With Integrated Unequal Wilkinson and λ/4 Phase Network for Midband 5G

International Journal of RF and Microwave Computer-Aided Engineering, Volume 2026, Issue 1, 2026.
This paper presents the design and implementation of a high‐efficiency two‐way Doherty power amplifier (DPA) for sub‐6 GHz 5G New Radio (NR) applications, specifically targeting the n78 band (3.3–3.8 GHz). The proposed gallium nitride (GaN)‐based DPA delivers a peak output power of 42.5 dBm, a gain of 13.3 dB, and a maximum power‐added efficiency (PAE)
Tugba Haykir Ergin, Ismail Sisman, Palandoken Merih   +2 more
wiley   +1 more source

Formation of 2D Electron Gas at a Non‐Polar Perovskite Oxide Interface: SrHfO3/BaSnO3

Advanced Functional Materials, Volume 35, Issue 51, December 16, 2025.
Through experiments and Poisson‐Schrödinger simulations, 2D electron gas formed at the non‐polar SrHfO3/BaSnO3 interface is observed. A large conduction band offset enables modulation doping by the intrinsic deep donors in SrHfO3, resulting in carrier confinement in BaSnO3 without relying on interfacial polarization or termination‐layer engineering ...
Jongkyoung Ko, Oliver Bierwagen, Wonwoo Suh, Jeewon B. Choi, Celesta S. Chang, Kookrin Char   +5 more
wiley   +1 more source