Results 71 to 80 of about 2,431 (179)
Advanced Materials Technologies, Volume 11, Issue 7, 6 April 2026.The 4R principle—Resilience, Repairability, Recyclability, and Renewability—enables sustainable liquid‐metal transistors. LM materials provide stretchable, damage‐tolerant architectures, allow rapid circuit repair, permit full material recovery through dissolution, and support renewable fabrication cycles, forming a closed‐loop pathway toward ...
Elahe Parvini, Abdollah Hajalilou
wiley +1 more source
Gallium Nitride Semiconductor Resonant Tunneling Transistor
Advanced Science, Volume 13, Issue 13, 3 March 2026.Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Fang Liu +15 more
wiley +1 more source
Caratterizzazione e affidabilità di transistor ad elevata mobilità AlGaN/GaN con gate trasparente in Indium-Tin-Oxide (ITO) [PDF]
, 2022 La tesi presente verte sulla caratterizzazione e affidabilità di dispositivi HEMT in AlGaN/GaN. I dispositivi analizzati sono contenuti nel wafer V080404CF fabbricato alla University of California, Santa Barbara.
Rossetto, Isabella
core
Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs [PDF]
, 2022 Best Paper AwardInternational audienceA new AlGaN/GaN heterostructure is proposed to achieve a normally-off behavior for GaN HEMTs. It relies on multiple P-GaN wells epitaxial regrowth along the gate.
Patrick Austin +11 more
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XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates
Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim +6 more
wiley +1 more source
Journal of Physics CommunicationsIn the present study, p-GaN/AlGaN/GaN HEMTs treated with hydrogen plasma passivation were fabricated. Capacitance–voltage (C-V) and current–voltage(I-V) characteristics of these devices were subsequently measured.
Heyu Liu +7 more
doaj +1 more source
Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region
IEEE Journal of the Electron Devices Society, 2020 Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in the access region to a high-resistive GaN (HR-GaN); that oxygen plasma treatment used an AlN ...
Xinke Liu +8 more
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HEMT GaN Normally Off Reliability comparison [PDF]
, 2021 International audienceRecently, new HEMT GaN Normally Off with a buried Player have been developed by the LAAS Laboratory to propose a device adapted to embedded power electronics. In this article, several Normally Off HEMT GaN architectures are compared
Phulpin, Tanguy, Dinh, Thy Bich Hop
core
Nano Select, Volume 7, Issue 2, February 2026.Electronic transport in AlGaN/GaN nanowires (NW) was studied under ultraviolet excitation in a wide temperature range. Significant changes in the conductivity of the structures were revealed and explained by the modulation of the space charge limited current (SCLC) effect. Temperature‐dependent measurements of transport and noise properties using noise
Svetlana Vitusevich +3 more
wiley +1 more source
Gate Characteristics of Enhancement-Mode Fully Depleted p-GaN Gate HEMT [PDF]
, 2023 The conventional p -GaN in Schottky-type p -GaN gate HEMTs is converted into an insulator-like p -GaN, i.e., fully depleted p -GaN in the reverse-biased Schottky junction under forward gate bias ( VGS ), by inadequate activation of Mg.
Zheng, Zheyang +7 more
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