Results 51 to 60 of about 25,827,177 (224)

Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium–Tin–Oxide Gate Electrode

IEEE Journal of the Electron Devices Society, 2021
In this study, p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) with indium–tin–oxide (ITO) gate electrodes are demonstrated. The DC measurements for the devices show a drain current ( $\text{I}_{\mathrm{ D}}$ ) of 438 mA/mm at a
Chih-Yao Chang, Chien-Sheng Wang, Ching-Yao Wang, Yao-Luen Shen, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang   +7 more
doaj   +1 more source

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition

2022 IEEE International Reliability Physics Symposium (IRPS), 2022
A combined experimental/simulation analysis has been performed to study the gate reliability of GaN-HEMTs with p-type gate under pulse stress conditions. Results show that the time-dependent gate breakdown (TDGB) can be determined by two factors: i) the total ON-time during which the device is subjected to a positive gate bias before the failure; ii ...
Millesimo M., Bakeroot B., Borga M., Posthuma N., Decoutere S., Sangiorgi E., Fiegna C., Tallarico A. N.   +7 more
openaire   +1 more source

Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: A simulation study

Results in Physics
This study presents an analysis of an AlGaN/GaN high-electron-mobility transistor (HEMT) with a triple-trench structure (TT-HEMT) for the enhancement of breakdown voltage, which is often limited by the high electric field near the gate edge. Using COMSOL
Muhaimin Haziq, Hiroshi Kawarada, Shaili Falina, Mohd Syamsul   +3 more
doaj   +1 more source

Robotics in Ionizing Radiation Environments: Vulnerabilities, Hardening, and Future Directions

Advanced Robotics Research, EarlyView.
Radiation exposure causes cumulative degradation in robotic sensors, actuators, and electronic logic, often leading to undetected failures. This study maps component vulnerabilities, evaluates hardening and shielding strategies, and identifies testing gaps that must be addressed to enable next‐generation radiation‐tolerant robotic systems.
Francis A. K. Djirackor, Josephine T. Djirackor, Amanuel Abrdo Tereda, Sun Yi, Younho Seong   +4 more
wiley   +1 more source

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer

Micromachines
In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcoming ...
Juan Xiong, Xintong Xie, Jie Wei, Shuxiang Sun, Xiaorong Luo   +4 more
doaj   +1 more source

Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate

IEEE Journal of the Electron Devices Society, 2019
We report on the implementation of dynamic body-bias technique to improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) with the successful integration of body-diode.
Isra Mahaboob, Michael Yakimov, Kasey Hogan, Emma Rocco, Sean Tozier, F. Shahedipour-Sandvik   +5 more
doaj   +1 more source

The improvement of breakdown-voltage (¿2000 V) in GaN based HFETs by using double polarization junctions

Results in Physics, 2022
A novel AlGaN/GaN Super Heterojunction Field Effect Transistors (super HFET) with dual-polarization junction (DPJ) on the back-barrier layer and its working mechanism is studied. DPJ AlGaN/GaN super HEMT has two polarization junctions with an interval of
Xiuyang Tan, Huiqing Sun, Yuan Li, Xiaoyu Xia, Fan Xia, Miao Zhang, Jiancheng Ma, Liang Xu, Zhiyou Guo   +8 more
doaj   +1 more source

Vacancy‐Type Defects in N‐Implanted GaN and Their Impact on Mg Diffusion Studied by a Monoenergetic Positron Beam

physica status solidi (b), Volume 263, Issue 11, November 2026.
Vertical GaN devices have been extensively studied, and Mg implantation with sequential N implantation has been reported as an ideal technique for fabricating p‐type regions in these devices. We used positron annihilation to study vacancy behavior during ultrahigh‐pressure annealing. It was found that the imbalanced formation of Ga‐ and N‐vacancies and
Akira Uedono, Moriyuki Kanno, Shigefusa F. Chichibu, Shoji Ishibashi, Tetsu Kachi, Jun Suda   +5 more
wiley   +1 more source

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

Advanced Materials, Volume 38, Issue 60, 27 October 2026.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi, Souta Kurogi, Tomoya Okuda, Riku Kikuchi, Yusuke Wakamoto, Kouei Kubota, Hikaru Sasaki, Kazuhisa Ikeda, Kanako Shojiki, Takahiro Kawamura, Toru Akiyama, Takehito Seki, Takuya Maeda   +12 more
wiley   +1 more source

HEMT GaN Normally Off Reliability comparison

, 2021
International audienceRecently, new HEMT GaN Normally Off with a buried Player have been developed by the LAAS Laboratory to propose a device adapted to embedded power electronics. In this article, several Normally Off HEMT GaN architectures are compared
Phulpin, Tanguy, Dinh, Thy Bich Hop
core   +1 more source