Results 51 to 60 of about 2,431 (179)

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition

2022 IEEE International Reliability Physics Symposium (IRPS), 2022
A combined experimental/simulation analysis has been performed to study the gate reliability of GaN-HEMTs with p-type gate under pulse stress conditions. Results show that the time-dependent gate breakdown (TDGB) can be determined by two factors: i) the total ON-time during which the device is subjected to a positive gate bias before the failure; ii ...
Millesimo M., Bakeroot B., Borga M., Posthuma N., Decoutere S., Sangiorgi E., Fiegna C., Tallarico A. N.   +7 more
openaire   +1 more source

Suppression of hot electron effect in AlGaN/GaN HEMT with multi-grooves barrier-etched structure

Materials Research Express, 2023
A multi-grooves barrier-etched structure between barrier layer and passivation layer is proposed in this paper to suppress the hot electron effect at the gate edge on the drain side in the p-GaN gate AlGaN/GaN high-electron-mobility transistor.
Xuanlin Li, Jie Xu, Weijing Liu
doaj   +1 more source

Implications of Various Charge Sources in AlGaN/GaN Epi-Stack on the Drain & Gate Connected Field Plate Design in HEMTs

IEEE Access, 2022
We have established that a design strategy for drain and gate connected field plates should be adopted while keeping in mind the interplay of various charge sources across AlGaN/GaN epi-stack, which governs the electric field distribution across HEMT ...
Ankit Soni, Mayank Shrivastava
doaj   +1 more source

Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium–Tin–Oxide Gate Electrode

IEEE Journal of the Electron Devices Society, 2021
In this study, p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) with indium–tin–oxide (ITO) gate electrodes are demonstrated. The DC measurements for the devices show a drain current ( $\text{I}_{\mathrm{ D}}$ ) of 438 mA/mm at a
Chih-Yao Chang, Chien-Sheng Wang, Ching-Yao Wang, Yao-Luen Shen, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang   +7 more
doaj   +1 more source

Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: A simulation study

Results in Physics
This study presents an analysis of an AlGaN/GaN high-electron-mobility transistor (HEMT) with a triple-trench structure (TT-HEMT) for the enhancement of breakdown voltage, which is often limited by the high electric field near the gate edge. Using COMSOL
Muhaimin Haziq, Hiroshi Kawarada, Shaili Falina, Mohd Syamsul   +3 more
doaj   +1 more source

The improvement of breakdown-voltage (¿2000 V) in GaN based HFETs by using double polarization junctions

Results in Physics, 2022
A novel AlGaN/GaN Super Heterojunction Field Effect Transistors (super HFET) with dual-polarization junction (DPJ) on the back-barrier layer and its working mechanism is studied. DPJ AlGaN/GaN super HEMT has two polarization junctions with an interval of
Xiuyang Tan, Huiqing Sun, Yuan Li, Xiaoyu Xia, Fan Xia, Miao Zhang, Jiancheng Ma, Liang Xu, Zhiyou Guo   +8 more
doaj   +1 more source

Exceptional Gate Overvoltage Robustness in P-Gate GaN HEMT with Integrated Circuit Interface [PDF]

The narrow gate overvoltage margin of classical enhancement-mode p-gate GaN high electron mobility transistors (HEMT). is a major concern in both soft and hard switching applications.
Wang, Bixuan, Mukherjee, Kalparupa, Zhang, Yuhao, Longobardi, Giorgia, Efthymiou, Loizos, Song, Qihao, Popa, Daniel, Udrea, Florin   +7 more
core   +1 more source

Low Insertion‐Loss High Power X‐Band SPDT Transmit/Receive Switches in 250 nm GaN HEMT

Microwave and Optical Technology Letters, Volume 68, Issue 6, June 2026.
ABSTRACT We present three X‐band transmit/receive (T/R) switches utilizing single‐pole double‐throw (SPDT) structures in 250 nm GaN HEMT technology. The first T/R switch was designed to achieve low insertion loss by constructing the SPDT structure with a series λ/4 transmission line (T‐line) and meticulously selected two HEMT switches in parallel for ...
Tae‐Hoon Kim, Mun‐Kyo Lee, Soonyoung Hong, Jung‐Dong Park   +3 more
wiley   +1 more source

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer

Micromachines
In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcoming ...
Juan Xiong, Xintong Xie, Jie Wei, Shuxiang Sun, Xiaorong Luo   +4 more
doaj   +1 more source

Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate

IEEE Journal of the Electron Devices Society, 2019
We report on the implementation of dynamic body-bias technique to improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) with the successful integration of body-diode.
Isra Mahaboob, Michael Yakimov, Kasey Hogan, Emma Rocco, Sean Tozier, F. Shahedipour-Sandvik   +5 more
doaj   +1 more source