Results 121 to 130 of about 25,827,177 (224)

Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation

IEEE Journal of the Electron Devices Society
For the first time, we use electrical characterization, spectrally-resolved electroluminescence measurements and degradation tests to explain the negative activation energy of gate reliability in power GaN HEMTs with p-GaN Schottky gate.
Manuel Fregolent, Mirco Boito, Michele Disaro, Carlo De Santi, Matteo Buffolo, Eleonora Canato, Michele Gallo, Cristina Miccoli, Isabella Rossetto, Giansalvo Pizzo, Alfio Russo, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini   +14 more
doaj   +1 more source

Enhanced high electron mobility transistor featuring a lattice matched AlInGaN/GaN heterojunction and composite gate structure

AIP Advances
This study introduces an enhanced high electron mobility transistor with a lattice-matched AlInGaN/GaN heterojunction and a composite gate structure (CGS). The CGS comprises a recessed gate and a P-type cap layer gate.
Kai Niu, Hao-Xiang Lin, Li-E. Cai, Zhi-Chao Chen, Zhi-Yu Ma, Yi-Fei Chen, Xiang-Yu Liu, Chuan-Tao Sun, Hai-Feng Lin, Zai-Jun Cheng   +9 more
doaj   +1 more source

Influence of p-GaN gate airgap in p-GaN AlGaN/GaN HEMTs for improved DC performance

Abstract This study proposes a novel p-GaN AlGaN/GaN high-electron-mobility transistor (HEMT) structure incorporating a gate airgap to address gate leakage and high electric field issues. Comprehensive device simulations conducted using COMSOL Multiphysics show that the airgap-integrated design enhances the breakdown voltage by 47.7% and ...
Muhaimin Haziq, Hiroshi Kawarada, Shaili Falina, Mohd Syamsul   +3 more
openaire   +1 more source

Device Simulation of P-InAlN-Gate AlGaN/GaN High Electron Mobility Transistor

, 2020
We simulate a p-InAlN gate AlGaN/GaN high electron mobility transistor (HEM). The studied HEMT is operated at an enhancement mode (e-mode) with positive threshold voltage and low gate leakage current at high gate voltage.
Han-Tung Chang, Edward Yi Chang, Yueh-Chin Lin, Niraj Man Shrestha, Yiming Li   +4 more
core  

MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC

, 2006
AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with a high-mobility GaN thin layer as a channel are grown on high resistive 6H-SiC substrates by metalorganic chemical vapor deposition.
Li Jianping, Hu Guoxin, Li Jinmin, Wang Xiaoliang, Luo Weijun, Xiao Hongling, Qian He, Liu Xinyu, Wang Cuimei, Ma Zhiyong, Wang Zhanguo, Chen Xiaojuan   +11 more
core  

Achieving low ON-resistance in E-mode regrown U-shaped p-GaN gate multi-channel HEMT

This work demonstrates an E-mode regrown U-shaped p-GaN gate multi-channel HEMT on a sapphire substrate. The multi-channel access region is favorable to reducing the ON-resistance (RON).
Jiawei Cui, Yuanyang Xu, Xuelin Yang, Hengyuan Qi, Zhenghao Chen, Sihang Liu, Xingyu Fu, Junjie Yang, Maojun Wang, Jin Wei, Bo Shen, Han Yang   +11 more
core   +1 more source

Damage Mechanism of GaN HEMT and Failure Analysis of Power Amplifier Under High-Altitude Electromagnetic Pulse. [PDF]

Micromachines (Basel)
Sun L, Wu H, Tian J, Bai K.
europepmc   +1 more source

High-Efficiency Sub-100 nm Gate GaN HEMTs Enabled by Two-Step SiN_x Layer Etching Technique. [PDF]

Micromachines (Basel)
Cao X, Wang P, Mi M, Liu X, Xiao D, Du X, Lu M, Chen F, Huang Z, Yao J, Liang Y, Cui K, Ma X, Hao Y.   +13 more
europepmc   +1 more source

Monolithically integrating polarization-doped InGaN p-FET and GaN n-FET for complementary logic circuitry. [PDF]

Sci Adv
Yu J, Li T, Lao Y, Yang J, Cui J, Liu S, Yang H, Yin Y, Wang M, Yang X, Chen KJ, Shen B, Wei J.   +12 more
europepmc   +1 more source

Atomically confined insertion for 2D strain and polarization engineered GaN electronics. [PDF]

Nat Commun
Shi Y, Dong Z, Wang J, Guo D, Li W, Sha W, Li Z, Yang Z, Zhang J, Liu J, Xu T, Hu W, Wang ZL, Zhai J.   +13 more
europepmc   +1 more source