Results 121 to 130 of about 2,431 (179)

An All-GaN Semiconducting-Gate HEMT for Inherent Gate-Level High-Voltage Protection and Synchronous Switching with Photoelectrically Enhanced Conductivity [PDF]

We demonstrate a normally-off n-GaN/p-GaN/AlGaN/GaN HEMT featuring a semiconducting gate (SG), i.e., an n-GaN layer overlaying the 2DEG channel as an intrinsic gate and connected to an extrinsic electrode outside the active region.
Zheng, Zheyang, Song, Wenjie, Yang, Song, Feng, Sirui, Zhang, Li, Chen, Kevin J., Chen, Tao, Geng, Yutao, Zhang, Haochen   +8 more
core   +1 more source

Simulation and optimization of enhanced back-gated GaN-based HEMT ultraviolet photodetector with a high photo-to-dark current ratio

AIP Advances
In this work, the performance of an innovative structure of an enhanced back-gated GaN-based HEMT ultraviolet photodetector is investigated using Silvaco Atlas.
Wulong Yuan, Xianyun Liu, Di Yang, Jun Yao, Chenglong Lu   +4 more
doaj   +1 more source

Blumlein-Generator with a GaN-HEMT in gate-boosted Operation as Closing Switch [PDF]

Gate-boosted operation of a GaN-HEMT allows for an operation with a rise time significantly faster than listed in the data sheet. For a GaN-HEMT having a rise time of approximately 4 ns under normal operating conditions a rise time of less than 1 ...
Sack, Martin, Müller, Georg, Herzog, Dennis   +2 more
core   +2 more sources

On-Wafer Gate Screening Test for Improved Pre-Reliability in p-GaN HEMTs

Micromachines
In this paper, preliminary gate reliability of p-GaN HEMTs under high positive gate bias is studied. Gate robustness is of great interest both from an academic and industrial point of view; in fact, different tests and models can be explored to estimate the device lifetime, which must meet some minimum product requirements, as specified by ...
Giovanni Giorgino, Cristina Miccoli, Marcello Cioni, Santo Reina, Tariq Wakrim, Virgil Guillon, Nossikpendou Yves Sama, Pauline Gaillard, Mohammed Zeghouane, Hyon-Ju Chauveau, Maria Eloisa Castagna, Aurore Constant, Ferdinando Iucolano, Alessandro Chini   +13 more
openaire   +2 more sources

Research on biomolecule-gate AlGaN/GaN high-electron-mobility transistor biosensors [PDF]

, 2014
In order to enhance the performance of AlGaN/GaN high electron mobility transistor (HEMT) biosensor, millimeter grade AlGaN/GaN HEMT structure have been designed and successfully fabricated.
Cheng, JJ (程珺洁), Li, HW (Li Hai-Wen), Li, JD (李加东), Wu, DM (吴东岷), Miao, B (苗斌), Wei, XW (魏晓伟), Zhang, ZQ (张志强)   +6 more
core  

Normally Off AlGaN/GaN MIS-HEMTs with Self-Aligned p-GaN Gate and Non-Annealed Ohmic Contacts via Gate-First Fabrication

Micromachines
This study introduces an enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) featuring a self-aligned p-GaN gate structure, fabricated using a gate-first process.
Yinmiao Yin, Qian Fan, Xianfeng Ni, Chao Guo, Xing Gu   +4 more
doaj   +1 more source

The ESD Robustness and Protection Technology of P-GaN HEMT

Micromachines
This work first analyzes the failure behaviors of P-GaN HEMTs with different gate structures (Schottky gate vs. Ohmic gate) under both forward and reverse ESD stresses.
Yijun Shi, Yantao Chen, Liang He, Xinghuan Chen, Yuan Chen, Guoguang Lu   +5 more
doaj   +1 more source

Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation

IEEE Journal of the Electron Devices Society
For the first time, we use electrical characterization, spectrally-resolved electroluminescence measurements and degradation tests to explain the negative activation energy of gate reliability in power GaN HEMTs with p-GaN Schottky gate.
Manuel Fregolent, Mirco Boito, Michele Disaro, Carlo De Santi, Matteo Buffolo, Eleonora Canato, Michele Gallo, Cristina Miccoli, Isabella Rossetto, Giansalvo Pizzo, Alfio Russo, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini   +14 more
doaj   +1 more source

Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure

Micromachines
This study demonstrates a particular composited barrier structure of high-electron-mobility transistors (HEMTs) with an enhancement mode composed of p-GaN/GaN/AlN/AlGaN/GaN. The purpose of the composite barrier structure device is to increase the maximum
An-Chen Liu, Yu-Wen Huang, Hsin-Chu Chen, Hao-Chung Kuo   +3 more
doaj   +1 more source

Study on the Relationship Between Threshold Voltage Instability and Gate Leakage Current in p-GaN HEMTs

IEEE Journal of the Electron Devices Society
This work uncovers a temperature-dependent relationship between gate leakage current ( $\mathrm{I}_{\mathrm{G}}$ ) and threshold voltage shift ( $\Delta \mathrm{V}_{\mathrm{TH}}$ ) through an evaluation combining deep level transient spectroscopy (DLTS ...
Yifan Cui, Yang Jiang, Yutian Gan, Qiaoyu Hu, Qing Wang, Hongyu Yu   +5 more
doaj   +1 more source