Results 141 to 150 of about 25,827,177 (224)

Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]

ACS Omega
Omar A, Loan SA.
europepmc   +1 more source

Source Field Plate Incorporated Monolithic Inverters Composed of GaN-Based CMOS-HEMTs with Double-2DEG Channels and Fin-Gated Multiple Nanochannels. [PDF]

Materials (Basel)
Chen HY, Lee HY, Lee H, Wu YR, Lee CT.
europepmc   +1 more source

Subarray programmable terahertz metasurface for optical logic and high-order amplitude modulation. [PDF]

Light Sci Appl
Wang L, Gong S, Xia C, Liu D, Cong X, Zhu A, Zeng H, Lan F, Yang Z, Otsuji T, Zhang Y.   +10 more
europepmc   +1 more source

Electron Tri-Layer Enhancement Mode High-Electron-Mobility Transistor: Design and Analysis. [PDF]

ACS Omega
Qureshi B, Alharbi AG, Ayub R, Loan SA.
europepmc   +1 more source

Engineering ScAlN Polar Properties for Advanced Electronic and Synaptic Applications. [PDF]

Small Methods
Zhang J, Dai Y, Zhou L, Lu Q, Dang K, Zhang Y, Zhang J, Hao Y.   +7 more
europepmc   +1 more source

Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]

ACS Appl Electron Mater
Kim DW, Kim B, Cho Y, Kim S, Gong Y, Baek Y, Bae B, Noh YK, Bae S, Park DH, Lee K.   +10 more
europepmc   +1 more source

Quasi-Vertical GaN-Based Trench Gate MOSFETs Treated with Fluorine-Plasma. [PDF]

Micromachines (Basel)
Zhang P, Li DY, Xu JR, Chang QY, Hou B, Xi H, Ma XH.   +6 more
europepmc   +1 more source

Investigation on the Isolation Approaches for High-Voltage GaN-on-Sapphire Monolithic Power Integrated Circuits. [PDF]

Micromachines (Basel)
Li S, Zhang H, Ma Y, Wang Q, Wang K, Xia Y, Wu L, Li Y, Zhu T, Ye R, Wei J, Zhang L, Liu S, Sun W.   +13 more
europepmc   +1 more source

Localized Electric Field Tailoring to Balance Voltage Reliability, Current Density, and High-Frequency Performance of AlGaN/GaN HEMTs. [PDF]

Micromachines (Basel)
Wang Y, Wang J, Dong Z, Tian P, Liu Y, Zhai J, Hu W.   +6 more
europepmc   +1 more source

Structure-Dependent Parameter Trade-Off Optimization on <i>R</i>_on<i>C</i>_off and Power Compression of AlGaN/GaN HEMTs for RF Switch Application. [PDF]

Micromachines (Basel)
Zou X, Zhang M, Yang L, Hou B, Wu M, Yi C, Lu H, Jia M, Yu Q, Jiang Y, Ma X, Hao Y.   +11 more
europepmc   +1 more source