Results 141 to 150 of about 2,431 (179)

Charge trapping related channel modulation instability in P-GaN gate HEMTs

Microelectronics Reliability, 2016
Abstract In this paper, a study of the channel modulation instability of commercial p-GaN gate HEMTs is presented. During the gate-voltage stress test, substantial RDS(ON) variations up to 78 mΩ (93.8%) were observed. It is found that the p-GaN/AlGaN/GaN gate structure enables the injection of holes and electrons, which can be captured by the donor ...
Xueyang Li, Gang Xie, Cen Tang, Kuang Sheng   +3 more
openaire   +1 more source

Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs

IEEE Transactions on Electron Devices, 2023
Xin Chao, Chengkang Tang, Jingjing Tan, Chen Wang, QingQing Sun, David Wei Zhang   +5 more
openaire   +1 more source

VTH Instability of p-GaN Gate HEMTs under Static and Dynamic Gate Stress

IEEE Electron Device Letters, 2018
The impacts of static and dynamic gate stress on the threshold voltage ( ${V}_{\text {TH}}$ ) instability in Schottky-type ${p}$ -GaN gate AlGaN/GaN heterojunction field-effect transistors are experimentally investigated. ${V}_{\text {TH}}$ shifts negatively under large positive bias static stress ( ${V}_{\text {G}}\_ {\text {stress}} >
He, Jiabei ECE, Tang, Gaofei, Chen, Jing
openaire   +2 more sources

Simulation Study of p-GaN Gate HEMTs With Dielectric Interlayer

2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), 2023
Shiyin Zhang, Kai Liu, Chong Wang, Ang Li   +3 more
openaire   +1 more source

Simulation model for a GaN-HEMT with Schottky p-GaN-Gate

2021
Neuartige Leistungstransistoren mit weitem Bandabstand aus den Materialien Siliziumkarbid (SiC) und Galliumnitrid (GaN) bieten im Vergleich zu Silizium-Schaltern die Möglichkeit, Systeme mit gesteigerten Schaltfrequenzen zu realisieren. Aufgrund der auftretenden schnellen Schalt- und Stromanstiegsgeschwindigkeiten steigt der Einfluss der parasitären ...
openaire   +1 more source

Study of p-GaN Gate MOS-HEMT with Al2O3 Insulator for High-Power Applications

Journal of Electronic Materials, 2023
Kuan Ning Huang, Yueh Chin Lin, Chia Chieh Hsu   +2 more
exaly  

Reliability Evaluation of p-GaN Gate HEMTs in Bootstrap Circuit

2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022
Yan Cheng, Han Xu, Li Zhang, Tao Chen, Junting Chen, Zheyang Zheng, Kevin J. Chen   +6 more
openaire   +1 more source

Study of TaN-Gated p-GaN E-Mode HEMT

IEEE Transactions on Electron Devices, 2023
Rijo Baby, K. Reshma, Hareesh Chandrasekar, Rangarajan Muralidharan, Srinivasan Raghavan, Digbijoy N. Nath   +5 more
openaire   +1 more source

Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT With AlGaN Cap-Layer

IEEE Electron Device Letters, 2021
Hsien-Chin Chiu, Hsuan-Ling Kao
exaly  

Gate Reliability of enhanced-mode p-GaN HEMTs

This thesis reports a summary of the experimental results for electronic devices based on Gallium Nitride (GaN). The analysis conducted was mainly based on test structures developed by STMicroelectronics and carried out in the ACME laboratories of the Department of Information Engineering of the University of Padua.
openaire   +1 more source