Results 131 to 140 of about 25,827,177 (224)

Improved Comprehensive Performance of GaN-Based E-Mode HEMTs with a Thin Al₂O₃ Interlayer. [PDF]

Nanomaterials (Basel)
Qiao G, Liu H, Feng C, Liao Y, Gong R, Guo H, Shao P, Chen D.   +7 more
europepmc   +1 more source

Preconditioning of Ohmic p-GaN power HEMT for reproducible Vth measurements

International audienceThe fluctuation of the threshold voltage (Vth) presents a challenge while monitoring electrical drift in reliability studies of GaN HEMTs.
Ghizzo, L., Trémouilles, David, Richardeau, Frédéric, Guibaud, G.   +3 more
core   +1 more source

AlGaN/GaN HEMT H₂ sensor with integrated Wheatstone bridge and on-chip microheater for 0.1-ppm detection. [PDF]

Microsyst Nanoeng
Yu Y, Liu Y, Ren W, Liu Y, Zhang Y, Wang Z, Zhuo Q, Liu Z, Wang T, Sun J.   +9 more
europepmc   +1 more source

Novel Monolithic CAVET-HEMT Integration for Inverting-Switch Operation. [PDF]

ACS Omega
Tan WH, Zhao H, Farizuan M, Firdaus A, Kawarada H, Tao T, Falina S, Syamsul M.   +7 more
europepmc   +1 more source

Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]

Materials (Basel)
Pu T, Li X, Li L, Ao JP.
europepmc   +1 more source

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

Discov Nano
Zhao H, Firdaus A, Farizuan M, Tan WH, Kawarada H, Falina S, Syamsul M.   +6 more
europepmc   +1 more source

A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization

This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transistors.
Wei-Hua Chieng, Ching-Yao Liu, Chih-Chiang Wu, Yueh-Tsung Shieh, Edward Yi Chang, Guo-Bin Wang   +5 more
core  

Improved Threshold Voltage Stability of p-GaN Gate HEMTs Under Off-State Drain Stress Using p-NiO RESURF Terminal. [PDF]

Micromachines (Basel)
Pan J, Ye X, Jiang R, Miao A, Miao F, Mao Z, Peng Y, Guo H, Lei J.   +8 more
europepmc   +1 more source

Device Design Implications on <i>R</i>_ON×<i>Q</i>_OSS FOM in p-GaN Power HEMTs: A Simulation Study. [PDF]

Micromachines (Basel)
Zagni N, Verzellesi G, Chini A.
europepmc   +1 more source

Terahertz Antenna-Coupled Wire-Channel Field-Effect Transistors Based on AlGaN/GaN Heterostructures. [PDF]

Sensors (Basel)
Moscotin M, Jorudas J, Prystawko P, Saniuk M, Kovalevskij V, Kašalynas I.   +5 more
europepmc   +1 more source