Results 131 to 140 of about 2,431 (179)

Enhanced high electron mobility transistor featuring a lattice matched AlInGaN/GaN heterojunction and composite gate structure

AIP Advances
This study introduces an enhanced high electron mobility transistor with a lattice-matched AlInGaN/GaN heterojunction and a composite gate structure (CGS). The CGS comprises a recessed gate and a P-type cap layer gate.
Kai Niu, Hao-Xiang Lin, Li-E. Cai, Zhi-Chao Chen, Zhi-Yu Ma, Yi-Fei Chen, Xiang-Yu Liu, Chuan-Tao Sun, Hai-Feng Lin, Zai-Jun Cheng   +9 more
doaj   +1 more source

Influence of p-GaN gate airgap in p-GaN AlGaN/GaN HEMTs for improved DC performance

Abstract This study proposes a novel p-GaN AlGaN/GaN high-electron-mobility transistor (HEMT) structure incorporating a gate airgap to address gate leakage and high electric field issues. Comprehensive device simulations conducted using COMSOL Multiphysics show that the airgap-integrated design enhances the breakdown voltage by 47.7% and ...
Muhaimin Haziq, Hiroshi Kawarada, Shaili Falina, Mohd Syamsul   +3 more
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Modelling the ON-state gate leakage current in p-GaN gated AlGaN/GaN HEMTs

Microelectronic Engineering
S. Milazzo, G. Greco, G. Giorgino, C. Miccoli, S. Mirabella, F. Iucolano, F. Roccaforte   +6 more
openaire   +1 more source

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Dynamic Threshold Voltage in $p$-GaN Gate HEMT

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019
The $p$ -GaN gate HEMT with a Schottky gate contact is studied in this work. The threshold voltage ( $\boldsymbol{V}_{\mathbf{th}}$ ) of the device is found to have a dynamic nature. When the device experiences a high drain voltage $V_{\text{DSQ}}$ , the gate-to-drain capacitance $C_{\text{GD}}$ is charged to $\boldsymbol{Q}_{\mathbf{GD ...
Jin Wei, Han Xu, Ruiliang Xie, Meng Zhang, Hanxing Wang, Yuru Wang, Kailun Zhong, Mengyuan Hua, Jiabei He, Kevin J. Chen   +9 more
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GaN HEMTs with p-GaN gate: field- and time-dependent degradation

SPIE Proceedings, 2017
GaN-HEMTs with p-GaN gate have recently demonstrated to be excellent normally-off devices for application in power conversion systems, thanks to the high and robust threshold voltage (VTH>1 V), the high breakdown voltage, and the low dynamic Ron increase.
MENEGHESSO, GAUDENZIO, MENEGHINI, MATTEO, ROSSETTO, ISABELLA, CANATO, ELEONORA, Bartholomeus, J., DE SANTI, CARLO, TRIVELLIN, NICOLA, ZANONI, ENRICO   +7 more
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Recessed p-GaN Gate MIS-HEMT with AlN Interlayer and Buried p-GaN Layer

Semiconductors
Jobymol Jacob, Sreelekshmi P S, Jobymol Jacob   +2 more
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Review of technology for normally-off HEMTs with p-GaN gate

Materials Science in Semiconductor Processing, 2018
Owing to the high carrier density and high electron mobility of the two dimensional electron gas (2DEG), high electron mobility transistors (HEMTs) based on gallium nitride (GaN) are suitable devices for high power and high frequency applications. Clearly, the presence of the 2DEG at the interface of AlGaN/GaN heterostructures makes HEMTs intrinsically
G Greco, F Iucolano, F Roccaforte
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Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain

Superlattices and Microstructures, 2021
Abstract A normally-off reverse blocking high electron mobility transistor (HEMT) with p-GaN gate and hybrid p-GaN ohmic drain (p-GaN RB-HEMT) has been fabricated and investigated to achieve reverse blocking capability. Compared with conventional p-GaN gate HEMT with ohmic drain (p-GaN HEMT), the proposed device features that a p-GaN layer is ...
Haiyong Wang, Wei Mao, Shenglei Zhao, Jiabo Chen, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao   +9 more
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A Novel Digital Etch Technique for p-GaN Gate HEMT

2018 IEEE International Conference on Semiconductor Electronics (ICSE), 2018
We demonstrate the digital etching (DE) process to fabricated E-mode p-GaN/AIGaN/GaN HEMT. DE process comprising low power oxygen (02) plasma oxidizing and low power boron trichloride (BCl 3 ) plasma etching to selectively remove p-GaN layer. The atomic layer etching (ALE) has an etching rate of 1.62 nm/cycle to achieved depth of 70nm.
Yuan Lin, Yueh Chin Lin, Franky Lumbantoruan, Chang Fu Dec, Burhanuddin Yeop Majilis, Edward Yi Chang   +5 more
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Impact of Gate Offset on PBTI of p-GaN Gate HEMTs

2022 IEEE International Reliability Physics Symposium (IRPS), 2022
Ethan S. Lee, Jungwoo Joh, Dong-Seup Lee, Jesús A. del Alamo   +3 more
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