Gate Metal Defect Screening at Wafer-Level for Improvement of HTGB in Power GaN HEMT. [PDF]
Chuang YT, Tumilty N.
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Effect of Dual Al<sub>2</sub>O<sub>3</sub> MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT. [PDF]
Li Y, Huang Y, Li J, Sun H, Guo Z.
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Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]
Weis M.
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Making UV light visible by exciting polarization-gate phototransistor to achieve energy transfer into GaN-based blue emission. [PDF]
Chu C +7 more
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Design and Application of p-AlGaN Short Period Superlattice. [PDF]
Liu Y +6 more
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Recent Progress of Ion Implantation Technique in GaN-Based Electronic Devices. [PDF]
Lu H +8 more
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Materials challenges in solid-state sensors for continuous monitoring of ions in water. [PDF]
Darestani-Farahani M, Kruse P.
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The Effect of Dual-Layer Carbon/Iron-Doped Buffers in an AlGaN/GaN High-Electron-Mobility Transistor. [PDF]
Chang PH +4 more
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High Power Density X-Band GaN-on-Si HEMTs with 10.2 W/mm Used by Low Parasitic Gold-Free Ohmic Contact. [PDF]
Du J +12 more
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Investigation of III-Nitride MEMS Pressure Sensor for High-Temperature Applications. [PDF]
Prio MH +6 more
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