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Review of technology for normally-off HEMTs with p-GaN gate
Materials Science in Semiconductor Processing, 2018Owing to the high carrier density and high electron mobility of the two dimensional electron gas (2DEG), high electron mobility transistors (HEMTs) based on gallium nitride (GaN) are suitable devices for high power and high frequency applications. Clearly, the presence of the 2DEG at the interface of AlGaN/GaN heterostructures makes HEMTs intrinsically
G Greco, F Iucolano, F Roccaforte
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A Novel Digital Etch Technique for p-GaN Gate HEMT
2018 IEEE International Conference on Semiconductor Electronics (ICSE), 2018We demonstrate the digital etching (DE) process to fabricated E-mode p-GaN/AIGaN/GaN HEMT. DE process comprising low power oxygen (02) plasma oxidizing and low power boron trichloride (BCl 3 ) plasma etching to selectively remove p-GaN layer. The atomic layer etching (ALE) has an etching rate of 1.62 nm/cycle to achieved depth of 70nm.
Yuan Lin +5 more
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Impact of Gate Offset on PBTI of p-GaN Gate HEMTs
2022 IEEE International Reliability Physics Symposium (IRPS), 2022Ethan S. Lee +3 more
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Charge trapping related channel modulation instability in P-GaN gate HEMTs
Microelectronics Reliability, 2016Abstract In this paper, a study of the channel modulation instability of commercial p-GaN gate HEMTs is presented. During the gate-voltage stress test, substantial RDS(ON) variations up to 78 mΩ (93.8%) were observed. It is found that the p-GaN/AlGaN/GaN gate structure enables the injection of holes and electrons, which can be captured by the donor ...
Xueyang Li +3 more
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Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs
IEEE Transactions on Electron Devices, 2023Xin Chao +5 more
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Simulation Study of p-GaN Gate HEMTs With Dielectric Interlayer
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), 2023Shiyin Zhang +3 more
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Reliability Evaluation of p-GaN Gate HEMTs in Bootstrap Circuit
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022Yan Cheng +6 more
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Study of TaN-Gated p-GaN E-Mode HEMT
IEEE Transactions on Electron Devices, 2023Rijo Baby +5 more
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Simulation model for a GaN-HEMT with Schottky p-GaN-Gate
2021Neuartige Leistungstransistoren mit weitem Bandabstand aus den Materialien Siliziumkarbid (SiC) und Galliumnitrid (GaN) bieten im Vergleich zu Silizium-Schaltern die Möglichkeit, Systeme mit gesteigerten Schaltfrequenzen zu realisieren. Aufgrund der auftretenden schnellen Schalt- und Stromanstiegsgeschwindigkeiten steigt der Einfluss der parasitären ...
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Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT With AlGaN Cap-Layer
IEEE Electron Device Letters, 2021Hsuan-Ling Kao +2 more
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