Results 171 to 180 of about 25,827,177 (224)

Recent Advances in Diamond-Capped GaN HEMTs for RF Application. [PDF]

Nanomaterials (Basel)
Xiang Y, Wu M, Sun H, Li S, Chen H, Wei J, Yan B, Yang L, Zhang M, Lu H, Hou B, Ma X, Hao Y.   +12 more
europepmc   +1 more source

Research on the Degradation and Failure Mechanisms of the Unclamped-Inductive-Switching Characteristics of p-GaN HEMT Devices. [PDF]

Micromachines (Basel)
Liu L, Zhen Y, Li S, Pang B, Zeng K.
europepmc   +1 more source

Impact of Printed Circuit Board Dielectric Material on the Thermal Behavior of Wafer-Level Packaging GaN Transistors Used in High-Power-Density Converters for Electric Vehicle Applications. [PDF]

Micromachines (Basel)
Belguith M, Eloued S, Kadi M, Ben Hadj Slama J, Hamouda M.   +4 more
europepmc   +1 more source

Numerical study of terahertz radiation from N-polar AlGaN/GaN HEMT under asymmetric boundaries. [PDF]

Front Optoelectron
Xing R, Guo H, Guo B, Yu G, Zhang P, Zhou J, Yang A, Li Y, Hao C, Yue H, Zeng Z, Zhang X, Zhang B.   +12 more
europepmc   +1 more source

Novel Bidirectional ESD Circuit for GaN HEMT. [PDF]

Micromachines (Basel)
Zhang P, Yang C, Shen J, Luo X, Deng G, Sun S, Wei Y, Wei J.   +7 more
europepmc   +1 more source

An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps

IEEE Electron Device Letters, 2023
An active-passivation p-GaN gate HEMT (AP-HEMT), featuring an active p-GaN passivation layer extending into the drain-side access region, is demonstrated on a commercial E-mode p-GaN/AlGaN/GaN heterostructure wafer.
Li Zhang, Kevin J. Chen, Zheyang Zheng
exaly   +2 more sources

P-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability

IEEE Electron Device Letters, 2021
By deploying a surface reinforcement layer (SRL) at the interface between Schottky metal and p -GaN in the gate stack, a p -GaN gate high-electron-mobility transistor (HEMT) with enhanced gate reliability is demonstrated.
Wenjie Song, Li Zhang, Kevin J. Chen
exaly   +2 more sources

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Dynamic Threshold Voltage in $p$-GaN Gate HEMT

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019
The $p$ -GaN gate HEMT with a Schottky gate contact is studied in this work. The threshold voltage ( $\boldsymbol{V}_{\mathbf{th}}$ ) of the device is found to have a dynamic nature. When the device experiences a high drain voltage $V_{\text{DSQ}}$ , the gate-to-drain capacitance $C_{\text{GD}}$ is charged to $\boldsymbol{Q}_{\mathbf{GD ...
Jin Wei, Han Xu, Ruiliang Xie, Meng Zhang, Hanxing Wang, Yuru Wang, Kailun Zhong, Mengyuan Hua, Jiabei He, Kevin J. Chen   +9 more
openaire   +1 more source

GaN HEMTs with p-GaN gate: field- and time-dependent degradation

SPIE Proceedings, 2017
GaN-HEMTs with p-GaN gate have recently demonstrated to be excellent normally-off devices for application in power conversion systems, thanks to the high and robust threshold voltage (VTH>1 V), the high breakdown voltage, and the low dynamic Ron increase.
MENEGHESSO, GAUDENZIO, MENEGHINI, MATTEO, ROSSETTO, ISABELLA, CANATO, ELEONORA, Bartholomeus, J., DE SANTI, CARLO, TRIVELLIN, NICOLA, ZANONI, ENRICO   +7 more
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Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain

Superlattices and Microstructures, 2021
Abstract A normally-off reverse blocking high electron mobility transistor (HEMT) with p-GaN gate and hybrid p-GaN ohmic drain (p-GaN RB-HEMT) has been fabricated and investigated to achieve reverse blocking capability. Compared with conventional p-GaN gate HEMT with ohmic drain (p-GaN HEMT), the proposed device features that a p-GaN layer is ...
Haiyong Wang, Wei Mao, Shenglei Zhao, Jiabo Chen, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao   +9 more
openaire   +1 more source