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Study of p-GaN Gate MOS-HEMT With Al2O3 Insulator for High-Power Applications
Journal of Electronic Materials, 2023Chia Chieh Hsu +2 more
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Gate Reliability of enhanced-mode p-GaN HEMTs
This thesis reports a summary of the experimental results for electronic devices based on Gallium Nitride (GaN). The analysis conducted was mainly based on test structures developed by STMicroelectronics and carried out in the ACME laboratories of the Department of Information Engineering of the University of Padua.openaire +1 more source
Unidirectional p-GaN gate HEMT with composite source-drain field plates
Science China Information Sciences, 2022Haiyong Wang +10 more
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High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate
IEEE Transactions on Electron Devices, 2022Qi Wang, Li Xiaobo, Xinke Liu
exaly
Processes of p-GaN Gate HEMTs for High-efficiency and High-reliability Applications
2023 IEEE 15th International Conference on ASIC (ASICON), 2023Junting Chen +3 more
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A Nanoscale AlGaN/GaN HEMT on BGO Substrate With Recessed T Gate for High Frequency Applications
Materials Today: Proceedings, 2023Anju S, V Suresh Babu
exaly
Gate Circuit improves p-GaN HEMT VTH reliability
2023Liu, Xinke, Chen, Zengfa, Zhong, Ze
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Doping Engineering of p-GaN Gate HEMTs on Si
2026 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)Jun-Zhe Wang +5 more
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Wide-Range-Adjusted Threshold Voltages for E-Mode AlGaN/GaN HEMT With a p-SnO Cap Gate
Science China Materials, 2022Shuang Liu +2 more
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Reverse Blocking p-GaN Gate HEMTs With Multicolumn p-GaN/Schottky Alternate-Island Drain
IEEE Electron Device Letters, 2022Ruize Sun +10 more
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