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Improved Gate ESD Behaviors of p-GaN Power HEMTs by Hybrid Gate Technology
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)Yanfeng Ma +13 more
openaire +1 more source
Modeling of the gate leakage and forward gate reliability in Schottky-gate p-GaN HEMTs
Carlo De Santi +13 moreopenaire +1 more source
Gate leakage modeling and reliability in forward gate bias of p-GaN HEMTs with Schottky-gate
Carlo De Santi +13 moreopenaire +1 more source
TLP effects on normally-off p-GaN gate power HEMTs with Schottky gate
C. De Santi +7 moreopenaire +1 more source