Results 211 to 220 of about 25,827,177 (224)

Methodology for Extrapolating the Lifetime of GaN HEMTs with p-GaN Gate

2026 IEEE International Reliability Physics Symposium (IRPS)
R. Fraccaroli, M. Fregolent, M. Dell'Andrea, I. Rossetto, C. De Santi, A. Pirani, A. Millefanti, G. Pizzo, V. Fezzi, M. E. Castagna, C. Miccoli, F. Iucolano, G. Meneghesso, E. Zanoni, M. Meneghini   +14 more
openaire   +1 more source

Hybrid p-GaN/MIS Gate HEMT Suppressing Drain-Induced Dynamic Threshold Voltage Instability

IEEE Electron Device Letters
Jin Wei, Jinyan Wang, Maojun Wang
exaly  

Insulated p-GaN Gate Active-Passivation HEMT Maintaining Effective Hole Injection for Low Dynamic ON-Resistance

IEEE Electron Device Letters
Xuelin Yang, Jin Wei, Jinyan Wang
exaly  

Recessed p-GaN Gate MIS-HEMT with AlN Interlayer and Buried p-GaN Layer

Semiconductors
P. S. Sreelekshmi, Jobymol Jacob
openaire   +1 more source

Gate Stability and Reliability of Fully Depleted p-GaN Gate HEMTs

openaire   +1 more source

Threshold Voltage Modulation and Gate Leakage Suppression of Enhancement-Mode GaN HEMT by Metal/Insulator/p-GaN Gate Structure

Physica Status Solidi A
Xiaohua Ma, Chong Wang, kuo Zhang
exaly  

Uncertainty-Aware Gate-Lifetime Prediction of p-GaN Gate HEMTs Using Gaussian Processes

2025 9th International Conference on System Reliability and Safety (ICSRS)
Shuoyan Zhao, Raj Thilak Rajan, Andrea Natale Tallarico, Maurizio Millesimo, Vladislav Volosov, Antonio Imbruglia, Justin Dauwels   +6 more
openaire   +1 more source

Design of 30 nm Multi-Finger Gate GaN HEMT for High Frequency Device

International Journal of Electronics
Lijun He, Kang Ma, Liang She
exaly  

Stable High Temperature Operation of p-GaN Gate HEMT With Etch-Stop Layer

IEEE Electron Device Letters
Hojoon Ryu, Wenjuan Zhu, Hanwool Lee
exaly  

Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation p-GaN Gate HEMT via Light/Hole Pumping

IEEE Transactions on Electron Devices
Jin Wei, Jinyan Wang, Maojun Wang
exaly