Results 11 to 20 of about 25,827,177 (224)

Gate Reliability and VTH Stability Investigations of p-GaN HEMTs

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2020
Gate reliability and reverse-bias-stress-induced $V$ TH instability issues were investigated in the E-mode p-GaN gate HEMTs. A GaN-based p-n junction gate (PNJ) HEMT featuring an $n$ -GaN/ $p$ -GaN/AlGaN/GaN gate stack was proposed to effectively reduce the gate leakage and enlarge safe gate operation bias region of the p-GaN gate devices. The $V$
Mengyuan Hua, Chengcai Wang, Junting Chen, Li Zhang, Zheyang Zheng, Kevin J. Chen   +5 more
openaire   +2 more sources

Gate Reliability of p-GaN HEMT With Gate Metal Retraction

IEEE Transactions on Electron Devices, 2019
In this article, we present an analysis of the gate degradation induced by long-term forward gate stress in GaN-based power HEMTs with p-type gate, controlled by a Schottky metal-retracted/p-GaN junction. In particular, time-dependent gate breakdown and threshold voltage instability are investigated as function of different geometries, gate biases, and
A. N. Tallarico, S. Stoffels, N. Posthuma, B. Bakeroot, S. Decoutere, E. Sangiorgi, C. Fiegna   +6 more
core   +4 more sources

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Micromachines, 2022
The self-heating and high-power microwave (HPM) effects that can cause device heating are serious reliability issues for gallium nitride (GaN) high-electron-mobility transistors (HEMT), but the specific mechanisms are disparate.
Yingshuo Qin, Changchun Chai, Fuxing Li, Qishuai Liang, Han Wu, Yintang Yang   +5 more
doaj   +2 more sources

Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs [PDF]

Micromachines, 2021
We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion.
Jie Wang, Zhanfei Chen, Shuzhen You, Benoit Bakeroot, Jun Liu, Stefaan Decoutere   +5 more
openaire   +4 more sources

Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs [PDF]

Applied Physics Letters, 2022
In this Letter, we experimentally investigate the impact of gate geometry on forward operation of Schottky-gate p-GaN high electron mobility transistors (HEMTs). In particular, we analyze devices with changing gate-metal/p-GaN junction area and p-GaN/AlGaN/GaN heterostructure area in the linear regime. These devices exhibit unique threshold voltage and
Ethan S. Lee, Jungwoo Joh, Dong Seup Lee, Jesús A. del Alamo   +3 more
openaire   +2 more sources

Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements [PDF]

IEEE Transactions on Electron Devices, 2021
In this work, we studied the gate breakdown mechanisms of p-GaN gate AlGaN/GaN HEMTs by a novel multiple-gate-sweep-based method. For the first time, three different breakdown mechanisms were observed and identified separately in the same devices: the metal/p-GaN junction breakdown, the p-GaN/AlGaN/GaN junction breakdown, and the passivation related ...
Zhou, Guangnan, Zeng, Fanming, Jiang, Yang, Wang, Qing, Jiang, Lingli, Guangrui, Xia, Yu, Hongyu   +7 more
openaire   +2 more sources

Gallium Nitride Semiconductor Resonant Tunneling Transistor. [PDF]

Adv Sci (Weinh)
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Liu F, Xue J, Wu G, Yuan J, Yao J, Liu R, Guo Z, Li Z, Hu H, Sun W, Zhao C, Zhang C, Liu X, Zhang K, Zhang J, Hao Y.   +15 more
europepmc   +2 more sources

Reliability of p-GaN Gate HEMTs in Reverse Conduction

IEEE Transactions on Electron Devices, 2021
Synchronous buck converter comprises a low side (LS) and a high side (HS) switch, where the HS switch works in the first quadrant (forward conduction) whereas the LS switch works in the third quadrant (reverse conduction). However, the reliability of the p-GaN gate high electron mobility transistor (HEMT) in reverse conduction is unclear. In this work,
Cingu, Deepthi, Li, Xiangdong, Bakeroot, Benoit, Amirifar, Nooshin, Geens, Karen, Jacobs, Kristof J.P., Zhao, Ming, You, Shuzhen, Groeseneken, Guido, Decoutere, Stefaan   +9 more
openaire   +3 more sources

High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs

IEEE Transactions on Electron Devices, 2021
In this article, we present an in-depth high-temperature analysis of the long-term gate reliability in GaN-based power high-electron-mobility transistors (HEMTs) with p-type gate. Three different isolation process options, aimed at improving the time-dependent gate breakdown (TDGB), are proposed and compared by means of constant voltage stress tests ...
M. Millesimo, C. Fiegna, N. Posthuma, M. Borga, B. Bakeroot, S. Decoutere, A. N. Tallarico   +6 more
openaire   +2 more sources

Surface-Potential-Based Compact Model for the Gate Current of p-GaN Gate HEMTs [PDF]

IEEE Transactions on Electron Devices, 2020
The gate leakage current of p-GaN gate HEMTs is modeled based on surface potential calculations. The model accurately describes the bias and temperature dependence of the gate leakage. Thermionic emission is the main mechanism of the gate current in forward bias operation while hopping transport component is the main mechanism of gate current in ...
Jie Wang, Zhanfei Chen, Shuzhen You, Wenyong Zhou, Benoit Bakeroot, Jun Liu, Lingling Sun, Stefaan Decoutere   +7 more
openaire   +2 more sources