Results 11 to 20 of about 2,431 (179)

Gate Reliability of p-GaN HEMT With Gate Metal Retraction [PDF]

IEEE Transactions on Electron Devices, 2019
In this article, we present an analysis of the gate degradation induced by long-term forward gate stress in GaN-based power HEMTs with p-type gate, controlled by a Schottky metal-retracted/p-GaN junction. In particular, time-dependent gate breakdown and threshold voltage instability are investigated as function of different geometries, gate biases, and
A. N. Tallarico, S. Stoffels, N. Posthuma, B. Bakeroot, S. Decoutere, E. Sangiorgi, C. Fiegna   +6 more
core   +5 more sources

p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability [PDF]

IEEE Electron Device Letters, 2021
By deploying a surface reinforcement layer (SRL) at the interface between Schottky metal and p -GaN in the gate stack, a p -GaN gate high-electron-mobility transistor (HEMT) with enhanced gate reliability is demonstrated.
Li Zhang, Zheyang Zheng, Song Yang
exaly   +2 more sources

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al₂O₃/AlN Composite Gate Insulator [PDF]

Membranes, 2021
A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated.
Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, Feng-Tso Chien   +7 more
doaj   +2 more sources

An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps [PDF]

IEEE Electron Device Letters, 2023
An active-passivation p-GaN gate HEMT (AP-HEMT), featuring an active p-GaN passivation layer extending into the drain-side access region, is demonstrated on a commercial E-mode p-GaN/AlGaN/GaN heterostructure wafer.
Yanlin Wu, Maojun Wang, Muqin Nuo
exaly   +2 more sources

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal [PDF]

Crystals, 2020
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh   +5 more
doaj   +2 more sources

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress [PDF]

IEEE Journal of the Electron Devices Society
In this work, we investigated the stability of a ${p}$ -GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit.
Linfei Gao, Ze Zhong, Qiyan Zhang, Xiaohua Li, Xinbo Xiong, Shaojun Chen, Longkou Chen, Huaibao Yan, Anle Zhang, Jiajun Han, Wenrong Zhuang, Feng Qiu, Hsien-Chin Chiu, Shuangwu Huang, Xinke Liu   +14 more
doaj   +2 more sources

Gate Reliability and VTH Stability Investigations of p-GaN HEMTs [PDF]

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2020
Gate reliability and reverse-bias-stress-induced $V$ TH instability issues were investigated in the E-mode p-GaN gate HEMTs. A GaN-based p-n junction gate (PNJ) HEMT featuring an $n$ -GaN/ $p$ -GaN/AlGaN/GaN gate stack was proposed to effectively reduce the gate leakage and enlarge safe gate operation bias region of the p-GaN gate devices. The $V$
Mengyuan Hua, Chengcai Wang, Junting Chen, Li Zhang, Zheyang Zheng, Kevin J. Chen   +5 more
openaire   +2 more sources

Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs [PDF]

Micromachines, 2021
We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion.
Jie Wang, Zhanfei Chen, Shuzhen You, Benoit Bakeroot, Jun Liu, Stefaan Decoutere   +5 more
openaire   +4 more sources

Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs [PDF]

Applied Physics Letters, 2022
In this Letter, we experimentally investigate the impact of gate geometry on forward operation of Schottky-gate p-GaN high electron mobility transistors (HEMTs). In particular, we analyze devices with changing gate-metal/p-GaN junction area and p-GaN/AlGaN/GaN heterostructure area in the linear regime. These devices exhibit unique threshold voltage and
Ethan S. Lee, Jungwoo Joh, Dong Seup Lee, Jesús A. del Alamo   +3 more
openaire   +2 more sources

Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements [PDF]

IEEE Transactions on Electron Devices, 2021
In this work, we studied the gate breakdown mechanisms of p-GaN gate AlGaN/GaN HEMTs by a novel multiple-gate-sweep-based method. For the first time, three different breakdown mechanisms were observed and identified separately in the same devices: the metal/p-GaN junction breakdown, the p-GaN/AlGaN/GaN junction breakdown, and the passivation related ...
Zhou, Guangnan, Zeng, Fanming, Jiang, Yang, Wang, Qing, Jiang, Lingli, Guangrui, Xia, Yu, Hongyu   +7 more
openaire   +2 more sources