Results 261 to 270 of about 386,002 (292)

High-voltage bipolar mode JFET with normally off characteristics

IEEE Electron Device Letters, 1985
The first realization of a power vertical JFET operated in the bipolar mode (BJFET) with normally off behavior is reported. The structure combines minority carrier injection from the gate region in the on-state, and lateral pinch-off of the channel, due to the built-in voltage, in the off-state.
BELLONE, Salvatore, ANTONIO CARUSO, PAOLO SPIRITO, G. F. VITALE, GIOVANNI BUSATTO, GIUSEPPE COCORULLO, G. FERLA, S. MUSUMECI   +7 more
openaire   +4 more sources

AlN/GaN heterostructures for normally-off transistors

Semiconductors, 2017
The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed.
K. S. Zhuravlev, T. V. Malin, V. G. Mansurov, O. E. Tereshenko, K. K. Abgaryan, D. L. Reviznikov, V. E. Zemlyakov, V. I. Egorkin, Ya. M. Parnes, V. G. Tikhomirov, I. P. Prosvirin   +10 more
openaire   +1 more source

GaAs Integrated Logic with Normally-Off MESFETs

Extended Abstracts of the 1978 International Conference on Solid State Devices and Materials, 1978
The normally-off GaAs MESFET digital integrated circuits which feature power dissipation as low as 0.2 mW per gate and sub-nanosecond delay time have been developed. To investigate the power-speed performance of the ICs, ring oscillators with different fan-in/fan-out have been fabricated. For fan-in/fan-out = 1/1 , a propagation delay time is typically
Katsuhiko Suyama, Hirotsugu Kusakawa, Masumi Fukuta   +2 more
openaire   +1 more source

Normally-off GaN MOSFETs on insulating substrate

Solid-State Electronics, 2013
Abstract Several types of GaN MOSFETs with normally-off operation have been fabricated on insulating substrate and evaluated. In recessed-gate GaN MOSFET, the threshold voltage ( V th ) can be easily controlled, but the current drivability is modest and needs to be improved by adopting appropriate device structure and/or process.
Dong-Seok Kim, Ki-Sik Im, Ki-Won Kim, Hee-Sung Kang, Do-Kywn Kim, Sung-Jae Chang, Youngho Bae, Sung-Ho Hahm, Sorin Cristoloveanu, Jung-Hee Lee   +9 more
openaire   +2 more sources

Macroscopic erosion in tokamak off normal events

Fusion Engineering and Design, 2001
In carbon based materials thermal stress due to pulsed heat loads results in breaking of lattice bonds. As a consequence of intense cracking macroscopic layers are destroyed and dust is produced. A phenomenological model for numerical simulation of brittle destruction in case of volumetric heating is used and results from different electron beam ...
Würz, H., Bazylev, B., Landman, I., Pestchanyi, S., Gross, S.   +4 more
openaire   +2 more sources

Ultrahigh On/Off Ratio (110) Diamond Transistors with Exceptional Reproducibility of Normally Off Characteristics

The Journal of Physical Chemistry Letters
The development of monolithic integrated energy-efficient complementary circuits is crucial for the large-scale application of wide bandgap semiconductor-based high-frequency and high-power field-effect transistors (FETs). However, the inferior performance of p-channel FETs attributed to low hole density and mobility presents a substantial challenge ...
Wenchao Zhang, Benjian Liu, Sen Zhang, Xiaohui Zhang, Pengfei Qiao, Bo Liang, Saifei Fan, Tao Su, Kang Liu, Bing Dai, Jiaqi Zhu   +10 more
openaire   +2 more sources

An apparatus for the measurement of the normal and off-normal spectral emissivity of incandescent materials

Journal of Physics E: Scientific Instruments, 1968
An apparatus for the measurement of the normal spectral emissivity and the angular dependence of thermal radiation of electric conducting solid materials is described. The method of measurement is the direct comparison of radiation from the material and from a black body by means of a rotating mirror and a prism monochromator. The radiating surface and
openaire   +1 more source

Modeling of GaN-Based Normally-Off FinFET

IEEE Electron Device Letters, 2014
In this letter, a macromodel for normally-off (enhancement mode) AlGaN/GaN-based FinFET (2-DEG channel at top with two MOS like sidewall channels) is proposed. AlGaN/GaN-based FinFET devices have improved gate control on the channel due to additional sidewall gates compared with planar structures, but device characteristics exhibit strong nonlinear ...
Chandan Yadav, Pragya Kushwaha, Sourabh Khandelwal, Juan Pablo Duarte, Yogesh Singh Chauhan, Chenming Hu   +5 more
openaire   +1 more source

Splat Formation in Off-Normal Angle Spray

International Thermal Spray Conference, 2000
Abstract This article examines the splat shape at off-normal angles in plasma spray and investigates the relationship between the splat elongation ratio and the spray angle on various spray materials and particle sizes. The applicability of the model to the experimental results is investigated.
H. Fukanuma, Y. Huang
openaire   +1 more source

Optical Effect in Normally-Off GaAs MESFET

physica status solidi (a), 1985
R. Gulati, S. B. Kaushik, P. L. Trivedi, H. S. Sharma, I. Chandra, B. L. Sharma   +5 more
openaire   +1 more source