Results 201 to 210 of about 3,063,705 (286)

Normally-off hydrogen-terminated diamond field effect transistor with yttrium gate

Carbon, 2021
The normally-off Yttrium (Y) gate hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with 5 nm Al2O3 dielectric layer has been successfully fabricated and evaluated in this work.
Feng Wen, , Hong-Xing Wang
exaly   +2 more sources

Normally-off polycrystalline C H diamond MISFETs with MgF2 gate insulator and passivation

Diamond and Related Materials, 2021
We report a normally-off C H diamond metal-insulator-semiconductor field effect transistor (MISFET) using a 15-nm-thick thermally evaporated MgF2 film as both the gate dielectric and the passivation layer.
Zhang Jincheng, Zeyang Ren, Kai Su
exaly   +2 more sources

Demonstration of the normally off β -Ga2O3 MOSFET with high threshold voltage and high current density

Applied Physics Letters, 2023
In this work, we demonstrated the enhancement mode (E-mode) β-Ga2O3 metal–oxide–semiconductor field-effect transistor (MOSFET) by introducing a hybrid floating gate (HFG) structure.
Yuncong Cai, Zhaoqing Feng, Zhengxing Wang, Xiufeng Song, Zhuangzhuang Hu, Xusheng Tian, Chunfu Zhang, Zhihong Liu, Q. Feng, Hong Zhou, Jincheng Zhang, Yue Hao   +11 more
semanticscholar   +1 more source

Mobility-enhanced normally off hydrogen-terminated diamond FET with low interface state density using Al2O3/Nd gate stack

Applied Physics Letters, 2023
A mobility-enhanced normally off hydrogen-terminated diamond (H-diamond) field-effect transistor (FET) with low interface state density has been realized using Al2O3/Nd gate stack deposited by electron beam evaporator.
Jianing Su, Wei Wang, G. Shao, Genqiang Chen, Hongxing Wang   +4 more
semanticscholar   +1 more source

Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at Vd = 12 V

IEEE Electron Device Letters, 2023
In this letter, we present high-performance tri-gate normally-off HEMTs RF power devices using MOCVD-grown thin barrier SiN/AlN/GaN heterostructures. The normally-off devices exhibit alloyed Ohmic contact resistance of about $0.35 \Omega \cdot $ mm, low
Jingshu Guo, Jiejie Zhu, Siyu Liu, K. Cheng, Qing Zhu, Pengfei Wang, Kai Liu, Ziyue Zhao, Lingjie Qin, Yuxi Zhou, Minhan Mi, Yue Hao, Xiao-hua Ma   +12 more
semanticscholar   +1 more source

A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode with Normally-off Operation, High Mobility and Reliability for 3D Integrated Devices

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
We have developed ALD InGaOx (IGO) and InSnOx deposition process for channel and electrode, systematically investigated the trade-off among mobility, electrostatics, and reliability in IGO FETs, designed and fabricated multi-gate nanosheet IGO FETs ...
Kaito Hikake, Zhuo Li, Junxiang Hao, C. Pandy, T. Saraya, T. Hiramoto, Takanori Takahashi, M. Uenuma, Y. Uraoka, M. Kobayashi   +9 more
semanticscholar   +1 more source

Enhanced Performance of Low-Leakage-Current Normally off p-GaN Gate HEMTs Using NH3 Plasma Pretreatment

IEEE Transactions on Electron Devices, 2023
In this article, a low-leakage-current and high-breakdown-voltage normally OFF p-GaN gate high-electron-mobility transistor (HEMT) on a Si substrate with low-damage NH3 plasma pretreatment was investigated.
Nengtao Wu, L. Luo, Zhiheng Xing, Shanjie Li, Fanyin Zeng, B. Cao, Changtong Wu, Guoqiang Li   +7 more
semanticscholar   +1 more source

A 400-V Half Bridge Gate Driver for Normally-Off GaN HEMTs With Effective Dv/Dt Control and High Dv/Dt Immunity

IEEE transactions on industrial electronics (1982. Print), 2023
This article presents two techniques to address the reliability issues caused by dv/dt under fast switching conditions of gallium nitride high electron mobility transistors.
Siyuan Yu, Qi Zhou, Gang Shi, Tianyang Wu, Jing Zhu, Long Zhang, Weifeng Sun, Sen Zhang, Nailong He, Ye Li   +9 more
semanticscholar   +1 more source

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

IEEE Transactions on Electron Devices, 2021
In this article, we demonstrate normally-OFF p-GaN gate high electron mobility transistors (HEMTs) on Si with an ultrahigh breakdown voltage ( ${V}_{BR}$ ) and excellent saturation drain current.
Huaxing Jiang, Qifeng Lyu, Renqiang Zhu, P. Xiang, K. Cheng, K. Lau   +5 more
semanticscholar   +1 more source