Results 251 to 260 of about 3,155,901 (384)

A Review of Intense Electromagnetic Fields in Heavy-Ion Collisions: Theoretical Predictions and Experimental Results. [PDF]

Research (Wash D C)
Shen D, Chen J, Huang XG, Ma YG, Tang A, Wang G.   +5 more
europepmc   +1 more source

Nuclear Physics: Towards Cheaper Accelerators [PDF]

, 1969

openalex   +1 more source

ErMn6Sn6: A Promising Kagome Antiferromagnetic Candidate for Room‐Temperature Nernst Effect‐Based Thermoelectrics

Advanced Functional Materials, EarlyView.
This work investigates the Nernst effect in the Kagome magnet ErMn6Sn6 which exhibits both topological and anomalous Nernst effects with the anomalous Nernst coefficient reaching 1.71 µV K⁻¹ at 300 K. This value surpasses that of most canted antiferromagnetic materials, making ErMn6Sn6 a promising candidate for advancing thermoelectric devices based on
Olajumoke Oluwatobiloba Emmanuel, Shuvankar Gupta, Xianglin Ke   +2 more
wiley   +1 more source

AAPM Task Group No. 249.B-Essentials and guidelines for clinical medical physics residency training programs. [PDF]

J Appl Clin Med Phys
Nye JA, Dugas JP, Erwin WD, Gierga DP, Kaurin DG, Leon SM, Liu HA, Lu ZF, Magri AW, Rill LN, Schubert LK, Schueler BA, Vergalasova I, Vetter J, Wichman BD, Yu AS, Zheng D.   +16 more
europepmc   +1 more source

Annual progress report of the U. S. C. Nuclear Physics Research Laboratory supported by US Atomic Energy Commission. [Dept. of Physics, Univ. of Southern California, 1964]

, 1964

openalex   +2 more sources

Division of Nuclear Physics [PDF]

, 1971
L. L. Green
openalex   +1 more source

Concurrent Interface Passivation and Contact Work Function Tuning in Organic Self‐Aligned Gate Transistors and Complementary Circuits Using Phosphonic Acid Self‐Assembled Monolayers

Advanced Functional Materials, EarlyView.
Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo, Mohamad Insan Nugraha, Hendrik Faber, Shaoxian Li, Chrysa Aivalioti, Bahaaeddin Irziqat, Ricardo Ruvalcaba, Temur Maksudov, Yu‐ying Yang, Harold F. MazoMantilla, Lazaros Panagiotidis, Mohamed Nejib Hedhili, Furkan H. Isikgor, Leonidas Tsetseris, Shadi Fatayer, Martin Heeney, Thomas D. Anthopoulos   +16 more
wiley   +1 more source

Coherence lengths and quantum entanglement in radiative capture reactions. [PDF]

Sci Rep
Mirzaee M, Sadeghi H.
europepmc   +1 more source

Nuclear Orientation and Its Application in Solid State Physics [PDF]

, 1979
B.G Turrell
openalex   +1 more source

Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing

Advanced Functional Materials, EarlyView.
A materials and device design concept that comprises a self‐assembled ultra‐thin epitaxial ion‐transporting layer, an amorphous oxide overcoat oxygen‐blocking layer, and a partial filament formed during an electroforming step is proposed for low‐current multilevel resistive switching devices.
Ming Xiao, Markus Hellenbrand, Nives Strkalj, Babak Bakhit, Zhuotong Sun, Nikolaos Barmpatsalos, Dovydas Joksas, Hongyi Dou, Zedong Hu, Ping Lu, Samip Karki, Sundar Kunwar, Jonathan D. Major, Aiping Chen, Haiyan Wang, Quanxi Jia, Adnan Mehonic, Judith L. MacManus‐Driscoll   +17 more
wiley   +1 more source