Results 131 to 140 of about 28,252 (263)

Ultrasensitive Anti‐Stokes Luminescence Thermometry in Transition Metal Dichalcogenide Monolayers

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate a highly sensitive nanothermometer using anti‐Stokes photoluminescence, also known as photoluminescence upconversion (UPL), in monolayer tungsten disulfide. A strong resonantly enhanced UPL is observed, confirming the central role of optical phonons in the PL upconversion mechanism.
Sharada Nagarkar   +6 more
wiley   +1 more source

Unraveling the Electronic Structure of Silicon Vacancy Centers in 4H‐SiC

open access: yesAdvanced Functional Materials, EarlyView.
The electronic structure of the silicon vacancy in 4H‐SiC is probed via transient absorption spectroscopy, uncovering previously inaccessible excited states of the quartet and doublet spin channels, including the V2' transition. In combination with theoretical analysis, a comprehensive picture of the electronic structure is established.
Ali Tayefeh Younesi   +9 more
wiley   +1 more source

Artery‐on‐Chip Demonstrates Mechanical and Functional Features of Healthy and Diseased Living Smooth Muscle Tissue

open access: yesAdvanced Functional Materials, EarlyView.
This article details the development of an artery‐on‐chip platform for in vitro arterial disease modeling and therapeutic discovery. It describes the fabrication of a fibrin biomaterial scaffold seeded with iPSC‐derived smooth muscle and endothelial cells, mimicking native artery properties. Two genetic disease models showcase the platform's ability to
Danielle Yarbrough   +10 more
wiley   +1 more source

Time‐Resolved Magnetization Switching Dynamics Driven by Orbital Torques

open access: yesAdvanced Functional Materials, EarlyView.
Du et al. reveal nanosecond magnetization switching driven by orbital currents using time‐resolved Hall detection. The measurements separate domain nucleation from domain wall propagation and show that Joule heating strongly assists switching by lowering energy barriers.
Ao Du   +4 more
wiley   +1 more source

Interface Effects in Ultrathin Silicon on Insulator Films

open access: yesAdvanced Functional Materials, EarlyView.
This work establishes a systematic framework to discriminate how bulk and interface phenomena affect charge transport in ultrathin P‐doped silicon‐on‐insulator (SOI) films. For Si films below 15 nm, electrical characterization demonstrates that interface states drive charge transport, shifting the metal‐insulator transition (MIT) critical dopant ...
Andrea Pulici   +8 more
wiley   +1 more source

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