Results 91 to 100 of about 9,496 (247)

ExTENDS: Efficient Data Placement and Management for Next Generation PCM-Based Storage Systems

open access: yesIEEE Access, 2019
Although flash memory solid state drives (FSSDs) outperform traditional hard disk drives (HDDs), their performance still fails to cope up with the perennial doubling speeds of microprocessors, regardless of the available high bandwidth. To alleviate this
Ronnie Mativenga   +3 more
doaj   +1 more source

NDIKIMI I TEKNOLOGJISË DHE SISTEMEVE TË INFORMACIONIT NË PRODUKTIVITETIN E NVM-VE

open access: yes, 2016
Ndikimi i teknologjisë së informacionit në produktivitetin e NVM-ve në këtë punimi do të jetë: Pasqyrimi i trendëve të zhvillimit të teknologjisë së informacionit dhe ndikimi i teknologjisë së informacionit në produktivitetin e NVM-ve, rëndësia e ...
Ibrahimi, Kosovare
core   +1 more source

Enabling Quantum‐Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO2‐Based RRAM From 300 to 1.5 K

open access: yesAdvanced Electronic Materials, Volume 12, Issue 19, 12 October 2026.
Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada   +11 more
wiley   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

open access: yesAdvanced Electronic Materials, Volume 12, Issue 19, 12 October 2026.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki   +3 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

open access: yesAdvanced Intelligent Discovery, Volume 2, Issue 5, October 2026.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj   +2 more
wiley   +1 more source

Spindle: A Write-Optimized NVM Cache for Journaling File System

open access: yes, 2019
Part 7: Memory and File SystemInternational audienceJournaling techniques are widely employed in modern file systems to guarantee crash consistency. However, journaling usually leads to system performance decrease due to the frequent storage accesses it ...
Kaixin Huang   +5 more
core   +1 more source

Nvm Semper Ivs Svvm Cviqve Sit Tribvendvm?

open access: yes
NVM SEMPER IVS SVVM CVIQVE SIT TRIBVENDVM? Nvm Semper Ivs Svvm Cviqve Sit Tribvendvm? ( - ) Binding ( - ) Title page ( - ) Chapter ( - ) Binding ( - ) Section ( -
Mellmann, Johann Dietrich   +1 more
core   +1 more source

MixSave: Tiering-Cooperative Energy-Efficient Scheme for Hybrid Storage System [PDF]

open access: yesJisuanji kexue yu tansuo
Taking advantage of green energy is becoming increasingly popular. However, when it comes to the storage I/O, where storage devices usually schedule nodes based on the intensity of the storage workload, the irregular fluctuations of green energy lead to ...
LI Daping, SHI Qingyu, TANG Yibin, HU Zhekun, GAO Yi
doaj   +1 more source

BIZNESI DHE STRATEGJIA PËR RRITJE TË TREGUT TË NVM-VE NË KOSOVË

open access: yes, 2016
Qysh prej përfundimit të luftës së fundit në Kosovë (1999), rolin kryesor në ekonominë e Kosovës e kanë marr ndërmarrjet e vogla dhe të mesme të njohura si NVM. Tani ato përfaqësojnë rreth 99% e ndërmarrjeve në Kosovë.
Beqaj, Rilind
core   +1 more source

Charge Storage Characteristics of Pi-Gate Poly-Si Nanowires TaN-Al2O3-Si3N4-SiO2-Si Flash Memory

open access: yesInternational Journal of Electrochemical Science, 2012
This work presents a novel TaN-Al2O3-Si3N4-SiO2-Silicon (TANOS) nonvolatile memory (NVM) with a structure that comprises Pi-gate (π-gate) nanowires (NWs) structure.
Yu-Hsien Lin   +3 more
doaj   +1 more source

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