Results 191 to 200 of about 389,258 (218)
Some of the next articles are maybe not open access.
A study of on-state and off-state breakdown voltages in GaN MESFETs
Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122), 2002We present the experimental results on the three-terminal on-state and off-state breakdown voltage studies of recessed-gate GaN MESFETs. Typical values of BV/sub DG/=57 V and BV/sub DS/= 46 V for the off-state breakdown voltages (BV) were measured at a value of current I/sub G/=-0.05 mA/mm.
A. Kuliev +5 more
openaire +1 more source
Fault diagnosis in voltage-fed PWM motor drives based on discrete voltage states
IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society, 2013This paper presents a new approach for diagnosis of short circuit Insulated Gate Bipolar Transistor (IGBT) faults in a three-phase voltage-fed motor drive. The three-phase Pulsewidth Modulated (PWM) voltage signals are monitored and digitised into two discrete levels. The combination of discrete voltage levels of the three phases composes eight voltage
Marjan Alavi, Danwei Wang, Ming Luo 0003
openaire +1 more source
A solid-state high voltage pulse power supply with three output voltages
2024 IEEE International Conference on Plasma Science (ICOPS)A solid-state high voltage pulse power supply with three synchronous output voltages is designed and constructed in this paper. The pulse power supply consists of a fractional-turn ratio saturable pulse transformer and three six-stage Marx generators.
Zilong Pan +6 more
openaire +2 more sources
The detection of transmembranic voltages by means of a solid-state probe
Medical & Biological Engineering, 1968To detect the steady-state and transient voltages acting across the membrane which contains the protoplasm of the living cell, thin glass-microelectrodes must be used. Unfortunately these show a very high series resistance which, together with the parasitic capacitances, acts as a low-pass filter hindering the detection of the very fast transmembranic ...
G W, Horn, A, Ferroni
openaire +2 more sources
Voltage Sag State Estimation for Power Distribution Systems
IEEE Transactions on Power Systems, 2005Summary form only given. The increased awareness on power quality has resulted in the need to quantify the voltage sag performance of a distribution feeder, similar to what has been done on characterizing the reliability performance of a feeder. Since it is impossible to measure the sag level at every node of a distribution feeder, estimation of sag ...
null Bin Wang, W. Xu, null Zhencun Pan
openaire +1 more source
Two-dimensional modeling of on state voltage drop in IGBT
1997 21st International Conference on Microelectronics. Proceedings, 2002In this paper a two-dimensional analysis of the on-state voltage drop for an IGBT, investigating the influence of the geometrical parameters of the device on current handling capabilities, is presented. Numerical simulations show that an optimal ratio between the cell dimension and the width of the epilayer region under the gate electrode exists ...
NAPOLI, ETTORE +2 more
openaire +2 more sources
Lifetime of metastable voltage states of superconducting tunnel junctions
Physical Review B, 1988To a very good approximation the voltage states of a superconducting tunnel junction can be described by a model of a quantum particle in a potential well and subject to dissipation. In the low-damping limit the dynamics of the particle obeys a master equation developed by Larkin and Ovchinnikov.
, Kopietz, , Chakravarty
openaire +2 more sources
Japanese Journal of Applied Physics, 2014
This paper presents threshold voltage shifts (?|Vth|) and their variability in p-channel metal?oxide?semiconductor field effect transistors (pMOSFETs) by the high voltage ON- and OFF-state stress. Measurement data show that ?|Vth| in pFETs by the high voltage ON- and OFF-state stress depends on gate length and gate width.
Nurul Ezaila Alias +3 more
openaire +1 more source
This paper presents threshold voltage shifts (?|Vth|) and their variability in p-channel metal?oxide?semiconductor field effect transistors (pMOSFETs) by the high voltage ON- and OFF-state stress. Measurement data show that ?|Vth| in pFETs by the high voltage ON- and OFF-state stress depends on gate length and gate width.
Nurul Ezaila Alias +3 more
openaire +1 more source
Structure of the voltage dependent anion channel: state of the art
Journal of Bioenergetics and Biomembranes, 2008The eukaryotic porin or Voltage Dependent Anion-selective Channels (VDAC) is the protein forming the aqueous pore channel in the mitochondrial outer membrane. It can modulate the energy-dependent metabolism of the cell forming a diffusion barrier to ions, adenine-nucleotides and other metabolites and it is probably involved in the regulation of ...
DE PINTO, Vito Nicola +3 more
openaire +2 more sources
Voltage-dependent conductance states of a single-molecule junction
Journal of Physics: Condensed Matter, 2012Ag-Sn-phthalocyanine-Ag junctions are shown to exhibit three conductance states. While the junctions are conductive at low bias, their impedance drastically increases above a critical bias. Two-level fluctuations occur at intermediate bias. These characteristics may be used to protect a nanoscale circuit.
Y F, Wang +6 more
openaire +2 more sources