Results 121 to 130 of about 1,144,743 (247)

A New Circuit Design for the Capacitor Multiplier with Cell-Based Variable Transconductance Amplifier

, 2018
26th IEEE Signal Processing and Communications Applications Conference (SIU) -- MAY 02-05, 2018 -- Izmir, TURKEYIn this work, a new capacitor multiplier circuit is proposed with recently recommended cell-based variable transconductance amplifier (cell ...
Alaybeyoğlu, Ersin
core   +1 more source

1 V Tunable High-Quality Universal Filter Using Multiple-Input Operational Transconductance Amplifiers

Sensors
This paper presents a new multiple-input single-output voltage-mode universal filter employing four multiple-input operational transconductance amplifiers (MI-OTAs) and three grounded capacitors suitable for low-voltage low-frequency applications.
Montree Kumngern, Fabian Khateb, Tomasz Kulej, Boonying Knobnob   +3 more
doaj   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

The design of an operational transconductance amplifier (OTA)

, 2017
Operational amplifiers are commonly used in analog circuit designing, especially operational transconductance amplifier (OTA)which is used to convert input voltage signal into an output current. However, OTA could only drive capacitive load, therefore an
Yap, Deep
core  

A low-power, low-noise recycling folded-cascode operational transconductance amplifier for neural recording applications [PDF]

: We present in this paper a low-noise, low-power CMOS operational transconductance amplifier designed for the preconditioning stage of implantable neural recording microsystems.
Mohamad Sawan, Amir Moosaei, Ali Nejati, Amiri, Parviz, Moosaei, Amir, Maghami, Mohammad Hossein, Sawan, Mohamad, Parviz Amiri, Nejati, Ali, Mohammad Hossein Maghami   +9 more
core   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTs

IEEE Journal of the Electron Devices Society
This paper reports a performance optimized operational amplifier (OPAMP) using transconductance enhancement topology based on the amorphous indium- gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs).
Fanzhao Meng, Yi Li, Jun Li, Jie Liang, Jianhua Zhang   +4 more
doaj   +1 more source

Designing an Inverter-based Operational Transconductance Amplifier-capacitor Filter with Low Power Consumption for Biomedical Applications. [PDF]

J Med Signals Sens, 2018
Yousefinezhad S, Kermani S, Hosseinnia S.   +2 more
europepmc   +1 more source

Low Power Ultra‐Wideband Low‐Noise Amplifier for UWB Receiver

Engineering Reports, Volume 8, Issue 9, September 2026.
This paper presents a 4–13 GHz UWB LNA designed in a 65 nm CMOS process, adopting gate inductor‐assisted impedance matching and current reuse feed‐forward noise cancellation. The LNA achieves 16.9 dB gain, 4.3 dB minimum NF, and only 9.4 mW power consumption from a 1 V supply.
Haimei Liu, Xiangqian Liu, Bilu Gao
wiley   +1 more source

Carrier Mobility Enhancement in Two‐Dimensional Semiconductor

Interdisciplinary Materials, Volume 5, Issue 5, Page 796-833, September 2026.
In this review, we comprehensively describe recent progress in carrier mobility enhancement strategies for 2D semiconductor‐based field‐effect transistors considering the role of intrinsic defects, electrode contact interfaces, dielectric engineering, and lattice strain engineering.
Huchanghui Zuo, Yuehao Li, Xiangkai Liu, Chao Tan, Guohua Hu, Mingdong Dong, Zegao Wang   +6 more
wiley   +1 more source