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Evaluation of a Silicon Carbide Static Induction Transistor for High Frequency/High Temperature Sensor Interface Circuits: Measurements and Modeling [PDF]
SensorsIn this paper, we report on the characterization of a silicon carbide static induction transistor (SiC SIT) for potential use in sensor interface circuits that operate at frequencies up to 100 MHz and temperatures up to 400 °C.
Jonathon R. Grgat +2 more
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Transconductance enhancement method for operational transconductance amplifiers
Electronics Letters, 2010 An improved recycling structure for an operational transconductance amplifier is proposed. The proposed structure separates the AC path from the DC path, and achieves a significant boost in transconductance under the same power and area budget. A folded-cascode amplifier employing the improved recycling structure was implemented in SMIC standard 0.13 ...
Y.L. Li +4 more
exaly +2 more sources
Sensors, 2023 In this work, a new versatile voltage- and transconductance-mode analog filter is proposed. The filter, without requiring resistors, employs three differential-difference transconductance amplifiers (DDTAs) and two grounded capacitors, which is suitable ...
Tomasz Kulej +2 more
exaly +3 more sources
An Ultra-Low-Voltage Transconductance Stable and Enhanced OTA for ECG Signal Processing
MicromachinesIn this paper, a rail-to-rail transconductance stable and enhanced ultra-low-voltage operational transconductance amplifier (OTA) is proposed for electrocardiogram (ECG) signal processing. The variation regularity of the bulk transconductance of pMOS and
Yue Yin, Xinbing Zhang, Ziting Feng
exaly +3 more sources
OTA Based Mem-capacitor Validation and Implementation Using Commercially Available IC [PDF]
International Journal of Electronics and Telecommunications, 2023 This paper discusses a mem-capacitor circuit which is based on two MO-OTA along with a multiplier and 4 passive elements. This circuit is a charge-controlled memcapacitor emulator which is independent of any memristor also it consists the feature of ...
Chandra Shankar +3 more
doaj +1 more source
Journal of Engineering Technology and Applied Physics, 2022 Although, dynamic power in portable mobile devices can be reduced by reducing power supply VDDon the cost of increased leakage current. Therefore, maintaining low leakage current in the device is serious issue for minimizing overall ...
Tan Chun Fui +2 more
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Nanomaterials, 2022 Gated ZnO nanowire field emitter arrays (FEAs) have important applications in large-area vacuum microelectronic devices such as flat panel X-ray sources and photodetectors.
Songyou Zhang +4 more
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Microscopic Theory of Transconductivity [PDF]
VLSI Design, 1998 Measurements of momentum transfer between two closely spaced mesoscopic electronic systems, which couple via Coulomb interaction but where tunneling is inhibited, have proven to be a fruitful method of extracting information about interactions in mesoscopic systems.
A. P. Jauho +4 more
openaire +1 more source
Introduction of the structure, modeling and analysis of junctionless heterostructure Si/Si1-xGex transistor [PDF]
مجله مدل سازی در مهندسی, 2023 In Junctionless transistors, the source-channel-drain doping is of the same type and level, hence, the process of making Junctionless transistors is easier than inverting mode transistor.
reyhaneh ejlali +3 more
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Design of Low Voltage Quasi-floating Self Cascode Current Mirror
U.Porto Journal of Engineering, 2021 In this paper, a modified structure of self-cascode structure is proposed. In the proposed structure, the MOSFET working in saturation mode is replaced by a Quasi-floating gate MOSFET by which the threshold voltage can be scaled, resulting in an increase
P. Anil, S. Tamil, N. Raj
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