Results 31 to 40 of about 26,266 (261)
Micromachines, 2023 In this study, AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were fabricated and investigated.
Meng Zhang +10 more
doaj +1 more source
Modelling of High Frequency Converter Transformer with Floating Active Inductor
Elektronika ir Elektrotechnika, 2018 As number of digital electronics and power electronics based devices has risen recently, the fields of application for high frequency transformers have been increased.
Mustafa Konal +3 more
doaj +1 more source
Finite bias charge detection in a quantum dot [PDF]
, 2005 We present finite bias measurements on a quantum dot coupled capacitively to a quantum point contact used as a charge detector. The transconductance signal measured in the quantum point contact at finite dot bias shows structure which allows us to ...
Driscoll, D. C. +5 more
core +1 more source
A 0.18μm CMOS 300MHz Current-Mode LF Seventh-order Linear Phase Filter for Hard Disk Read Channels [PDF]
, 2007 “This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders.
Moritz, J., Sun, Y., Zhu, X.
core +1 more source
Analog/RF Performance Investigation of Dopingless FET for Ultra-Low Power Applications
IEEE Access, 2019 In this paper, we investigated the performance of a dopingless (DL) double gate fieldeffect transistor (DL-DGFET) for ultra-low power (ULP) analog/RF applications. It is observed that the source/drain metal electrode work-function engineering in DL-DGFET
Ankit Sirohi +2 more
doaj +1 more source
A systematic approach to circuit design and analysis: classification of Two-VCCS Circuits [PDF]
, 1999 This paper discusses a systematic approach to the design and analysis of circuits, using a transconductor or voltage controlled current source (VCCS) as a building block.
Klumperink, Eric A.M.
core +2 more sources
Nature and Characteristics of a Voltage-Biased Varistor and its Embedded Transistor
IEEE Journal of the Electron Devices Society, 2015 An unorthodox approach for producing simple and yet practical transistors based on ceramic platforms is discussed in this paper. To achieve this, we modify the original nonlinear current-voltage (I-V) characteristics of a varistor by superimposing a ...
Raghvendra K. Pandey +2 more
doaj +1 more source
Sensors, 2022 A 24 GHz highly-linear upconversion mixer, based on a duplex transconductance path (DTP), is proposed for automotive short-range radar sensor applications using the 65-nm CMOS process.
Tahesin Samira Delwar +5 more
doaj +1 more source
Channel length effects on the performance of vOECTs
Materials Research ExpressChannel length ( L ), the most important parameter of various transistors, determines the transistor performance and integration density. Emerging vertical organic electrochemical transistors (vOECTs), easily enabling L of less than 100 nm, show ...
Jinjie Wen +9 more
doaj +1 more source
Understanding polarization vs. charge dynamics effects in ferroelectric-carbon nanotube devices
, 2013 To optimize the performance of multifunctional carbon nanotube-ferroelectric devices, it is necessary to understand both the polarization and charge dynamics effects on their transconductance.
Blaser, Cédric +2 more
core +2 more sources