Results 31 to 40 of about 14,891 (262)

Analog/RF Performance Investigation of Dopingless FET for Ultra-Low Power Applications

IEEE Access, 2019
In this paper, we investigated the performance of a dopingless (DL) double gate fieldeffect transistor (DL-DGFET) for ultra-low power (ULP) analog/RF applications. It is observed that the source/drain metal electrode work-function engineering in DL-DGFET
Ankit Sirohi, Chitrakant Sahu, Jawar Singh   +2 more
doaj   +1 more source

Design and analysis of modified recycling folded cascode amplifier with improved transconductance and slew rate

Engineering and Applied Science Research, 2020
To improve the transconductance of operational transconductance amplifier (OTA), various architectures namely recycling folded cascode (RFC), Improved recycling folded cascode (IRFC), modified recycling folded cascode (MRFC) and high recycling folded ...
Sudheer Raja Venishetty, Kumaravel Sundaram   +1 more
doaj   +1 more source

Nature and Characteristics of a Voltage-Biased Varistor and its Embedded Transistor

IEEE Journal of the Electron Devices Society, 2015
An unorthodox approach for producing simple and yet practical transistors based on ceramic platforms is discussed in this paper. To achieve this, we modify the original nonlinear current-voltage (I-V) characteristics of a varistor by superimposing a ...
Raghvendra K. Pandey, William A. Stapleton, Ivan Sutanto   +2 more
doaj   +1 more source

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications

Micromachines, 2023
In this study, AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were fabricated and investigated.
Meng Zhang, Yilin Chen, Siyin Guo, Hao Lu, Qing Zhu, Minhan Mi, Mei Wu, Bin Hou, Ling Yang, Xiaohua Ma, Yue Hao   +10 more
doaj   +1 more source

Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer

, 2014
A theoretical study of transconductance characteristics (gm − Vgs profile) of AlGaN/GaN high electron mobility transistors (HEMTs) with a graded AlGaN layer is given in this paper.
Hongling Xiao, Enchao Peng, Cuimei Wang, Peng, EC, Lijuan Jiang, Xiaoliang Wang, Qu, SQ, Chun Feng, Kang, H, He Kang, Wang, ZG, Shenqi Qu, Wang, CM, Yin, HB, Xun Hou, Hou, X, Jiang, LJ, Xiao, HL, Hong Chen, Wang, XL, Feng, C, Chen, H, Haibo Yin, Zhanguo Wang   +23 more
core   +1 more source

Investigation of Electrical Characteristics of a SiGe Multi-Channel Junctionless Nanowire FET at the Sub-5 nm Technology Node

Журнал нано- та електронної фізики
As semiconductor technology advances toward the sub-5 nm regime, maintaining high device performance while suppressing short-channel effects, leakage current, threshold-voltage instability, and power dissipation has become increasingly challenging. Thus,
Nisha J C, S. Ashok Kumar, J. Charles Pravin   +2 more
doaj   +1 more source

Design guideline of tunnel field-effect transistors (TFETs) considering negative differential transconductance (NDT)

, 2020
A gate-normal tunnel field-effect transistor (TFET) showing negative differential transconductance (NDT) and its design guideline are proposed.
Lee, Jang Woo, Choi, Woo Young, Jang Woo Lee, Woo Young Choi   +3 more
core   +1 more source

Ultra low-voltage low-power current conveyor transconductance amplifier [PDF]

, 2015
478-487This paper presents ultra low-voltage (LV) low-power (LP) CMOS structure for Current Conveyor Transconductance Amplifier (CCTA). The proposed structure is performed using recently presented technique named bulk-driven quasi-floating gate (BD ...
Kumngern, Montree, Khateb, Fabian, Lahiri, Abhirup, Dabbous, Salma Bay Abo, Kulej, Tomasz   +4 more
core   +2 more sources

Channel length effects on the performance of vOECTs

Materials Research Express
Channel length ( L ), the most important parameter of various transistors, determines the transistor performance and integration density. Emerging vertical organic electrochemical transistors (vOECTs), easily enabling L of less than 100 nm, show ...
Jinjie Wen, Baining Tao, Dan Zhao, Yixin Zhou, Yueheng Zhong, Sihui Hou, Liang-Wen Feng, Jianhua Chen, Gang Wang, Wei Huang   +9 more
doaj   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

Advanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi, Samuele Lavelli, Zsolt M. Kovács‐Vajna, Fabrizio Torricelli   +3 more
wiley   +1 more source