Results 31 to 40 of about 10,598 (239)

Low-voltage organic transistors with high transconductance

open access: yes, 2020
This thesis presents the development of low-voltage organic thin-film transistors with high transconductance. This was achieved by employing ultra-thin bi-layer gate dielectric consisting of aluminium oxide (AlOx) and a self-assembled monolayer of ...
Al Ruzaiqi, Afra Salim Mohamed
core   +2 more sources

Co-optimized e-mode AlGaN/GaN HEMT with composite p-GaN recessed cap and etched doped buffer for simultaneous DC and RF performance enhancement [PDF]

open access: yesSerbian Journal of Electrical Engineering
This study presents a theoretical analysis of the DC and RF characteristics of enhancement mode (E-mode) AlGaN/GaN High Electron Mobility Transistor (HEMT) utilizing symbiotic integration of advanced techniques e.g. composite gate structure with slightly
Al Fahad Abdullah   +4 more
doaj   +1 more source

Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer

open access: yes, 2014
A theoretical study of transconductance characteristics (gm − Vgs profile) of AlGaN/GaN high electron mobility transistors (HEMTs) with a graded AlGaN layer is given in this paper.
Hongling Xiao   +23 more
core   +1 more source

A Wide Linear Range Ultra-low Transconductance Amplifier for Biomedical Sensor Applications

open access: yes, 2023
In the field of biomedical sensors, active filters with very low cutoff frequencies are required because of the weak electrical signals from the human body.
Wu, Ruihuang   +7 more
core   +1 more source

Submicron Vertical Channel Organic Electrochemical Transistors with Ultrahigh Transconductance [PDF]

open access: yes, 2023
Organic electrochemical transistors (OECTs) belong to the class of electrolyte gated organic transistors (EGOTs) that offer a smooth interface with biology in combination with high transconductance values of typically a few mS.
Fabrizio Torricelli   +8 more
core   +1 more source

Low-voltage bulk-driven flipped voltage follower-based transconductance amplifier

open access: yes, 2022
A low voltage high performance design of operational transconductance amplifier is proposed in this paper. The proposed architecture is based on bulk driven quasi-floating gate metal oxide semiconductor field effect transistor (MOSFET) which supports low
Nikhil Raj   +7 more
core   +2 more sources

Channel length effects on the performance of vOECTs

open access: yesMaterials Research Express
Channel length ( L ), the most important parameter of various transistors, determines the transistor performance and integration density. Emerging vertical organic electrochemical transistors (vOECTs), easily enabling L of less than 100 nm, show ...
Jinjie Wen   +9 more
doaj   +1 more source

Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors

open access: yesAdvanced Materials, EarlyView.
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi   +11 more
wiley   +1 more source

A 65 nm Duplex Transconductance Path Up-Conversion Mixer for 24 GHz Automotive Short-Range Radar Sensor Applications

open access: yesSensors, 2022
A 24 GHz highly-linear upconversion mixer, based on a duplex transconductance path (DTP), is proposed for automotive short-range radar sensor applications using the 65-nm CMOS process.
Tahesin Samira Delwar   +5 more
doaj   +1 more source

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

open access: yesAdvanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu   +14 more
wiley   +1 more source

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