Results 21 to 30 of about 14,891 (262)
Advances on CMOS Folded-Cascode Operational Transconductance [PDF]
AUT Journal of Electrical Engineering, 2022 In this paper, a tutorial review on several structural improvements of the CMOS folded-cascode Operational Transconductance Amplifier (OTA) is presented. After a brief discussion on the structure and operation of the conventional Folded-Cascode Amplifier,
Mohammad Yavari
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Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs [PDF]
, 2012 Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors.
Kuball, M., Silvestri, M., Uren, M. J.
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Analog Integrated Current Drivers for Bioimpedance Applications: A Review
Sensors, 2019 An important component in bioimpedance measurements is the current driver, which can operate over a wide range of impedance and frequency. This paper provides a review of integrated circuit analog current drivers which have been developed in the last 10 ...
Nazanin Neshatvar +3 more
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Nanomaterials, 2023 2H MoTe2 (molybdenum ditelluride) has generated significant interest because of its superconducting, nonvolatile memory, and semiconducting of new materials, and it has a large range of electrical properties.
Kamoladdin Saidov +6 more
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Biquadratic transconductance switched-capacitor filters [PDF]
, 1993 Switched-capacitor (SC) filters yield efficient implementations in integrated form. However, they employ op-amps, each of which must be designed for a given filter separately. Furthermore, SC filters are not tunable.
Tan, M. A., M.A. Tan
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A model of partially-depleted SOI MOSFETs in the subthreshold range
Journal of Telecommunications and Information Technology, 2001 A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in cur- rent continuity equation, which is a key equation of the PD SOI MOSFETs model are ...
Andrzej Jakubowski
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Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ [PDF]
E3S Web of ConferencesSince the introduction of semiconductors, the world has undergone numerous profound transformations during the past few decades. With advancements in technology, semiconductor products' performance requirements keep rising.
El-Yazami Chaimae +2 more
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New ELIN Systems Using CMOS Transistors in Weak Inversion Operation
Advances in Electrical and Computer Engineering, 2013 In this paper new ELIN systems implemented by using CMOS transistors in weak inversion operation are presented. The proposed systems exploit the exponential-law characteristics of the subthreshold CMOS transistors.
BOZOMITU, R. G., CEHAN, V.
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Modelling of High Frequency Converter Transformer with Floating Active Inductor
Elektronika ir Elektrotechnika, 2018 As number of digital electronics and power electronics based devices has risen recently, the fields of application for high frequency transformers have been increased.
Mustafa Konal +3 more
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Extraction of oxide traps in III-V MOSFETs using RF transconductance measurements
, 2013 We here present simulations of the effect of border traps on the behavior of a III-V FET's transconductance with respect to frequency. We also compare simulations with a recently developed analytical model for extracting the border trap distribution ...
Lind, Erik, +2 more
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