Results 21 to 30 of about 10,598 (239)
Analog Integrated Current Drivers for Bioimpedance Applications: A Review
Sensors, 2019 An important component in bioimpedance measurements is the current driver, which can operate over a wide range of impedance and frequency. This paper provides a review of integrated circuit analog current drivers which have been developed in the last 10 ...
Nazanin Neshatvar +3 more
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Journal of Engineering Technology and Applied Physics, 2023 To meet the performance requirements of low power mobile devices, a device with a high ION/IOFF ratio at low-VDD is needed. TFETs are gaining popularity due to their low subthreshold slope and high transconductance compared to MOSFETs.
Tan Chun Fui, Ajay Kumar Singh
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A model of partially-depleted SOI MOSFETs in the subthreshold range
Journal of Telecommunications and Information Technology, 2001 A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in cur- rent continuity equation, which is a key equation of the PD SOI MOSFETs model are ...
Andrzej Jakubowski
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Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs [PDF]
, 2012 Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors.
Kuball, M., Silvestri, M., Uren, M. J.
core +1 more source
A Complementary Recycling Operational Transconductance Amplifier with Data-Driven Enhancement of Transconductance [PDF]
Electronics, 2019 An improved operational transconductance amplifier (OTA) is presented in this work. The fully differential OTA adopts the current recycling technique and complementary NMOS and PMOS input branches to enhance the total transconductance. Moreover, in order to achieve higher current efficiency, a data-driven biasing circuit was developed to dynamically ...
Xiang Li +5 more
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Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ [PDF]
E3S Web of ConferencesSince the introduction of semiconductors, the world has undergone numerous profound transformations during the past few decades. With advancements in technology, semiconductor products' performance requirements keep rising.
El-Yazami Chaimae +2 more
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New ELIN Systems Using CMOS Transistors in Weak Inversion Operation
Advances in Electrical and Computer Engineering, 2013 In this paper new ELIN systems implemented by using CMOS transistors in weak inversion operation are presented. The proposed systems exploit the exponential-law characteristics of the subthreshold CMOS transistors.
BOZOMITU, R. G., CEHAN, V.
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Design of Low Voltage Low Power High Gain Operational Transconductance Amplifier
U.Porto Journal of Engineering, 2021 In this paper, a high gain structure of operational transconductance amplifier is presented. For low voltage operation with improved frequency response bulk driven quasi-floating gate MOSFET is used at the input.
Rajesh Durgam, S. Tamil, Nikhil Raj
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Micromachines, 2023 In this study, AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were fabricated and investigated.
Meng Zhang +10 more
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Analog Performance and its Variability in Sub-10 nm Fin-Width FinFETs: a Detailed Analysis
IEEE Journal of the Electron Devices Society, 2019 This paper discusses in detail the effects of Sub-10nm fin-width (Wfin) on the analog performance and variability of FinFETs. It is observed through detailed measurements that the transconductance degrades and output conductance improves with the ...
Mandar S. Bhoir +6 more
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