Results 11 to 20 of about 14,891 (262)

Damage‐Free Passivation of Ambipolar OECTs with Fluoropolymer Film for Enhanced Performance and Stability Toward Reliable Biosignal Processing [PDF]

Advanced Science, EarlyView.
A damage‐free iCVD fluoropolymer passivation strategy is introduced for ambipolar vertical OECTs. Vapor‐phase infiltration and thermal annealing induce nanoscale phase separation in the OMIEC channel, enhancing overall device performance. A single‐channel bipolar event‐driven spiking encoder is also demonstrated for electrocardiogram signal encoding ...
Junyeong Yang, Bohyun Lee, Hanna Lee, Mingyu Kim, Changsoon Choi, Jung Ah Lim, Youson Kim, Sung Gap Im   +7 more
wiley   +2 more sources

Strain‐Enhanced Ultrastretchable Semiconducting Polymer Fibers for Organic Electrochemical Transistors [PDF]

Advanced Science, EarlyView.
The continuous fabrication of stretchable polymer semiconductor p(g2T‐T) fibers is realized via wet‐spinning. The p(g2T‐T) semiconductor fibers possess an efficient strain energy dissipation mechanism and unique strain‐enhanced electrical performance. They can be stretched to over 250% strain and exhibit an ultrahigh normalized transconductance of 276 ...
Zixu Chang, Ziao Xu, Qi Tang, Mingjuan Du, Faqiang Wang, Jiexun Zhu, Jianyong Yu, Bin Ding, Zhaoling Li   +8 more
wiley   +2 more sources

Grounded Capacitor Oscillators Using A Single Operational Transconductance Amplifier

Active and Passive Electronic Components, 1996
New oscillator circuits using operational transconductance amplifiers (OTAs) are presented. Each circuit uses a single OTA and grounded capacitors.
Muhammad Taher Abuelma'atti, Muhammad Haroon Khan   +1 more
doaj   +2 more sources

Design and temperature assessment of analog/RF and linearity parameters on dual material gate junctionless FinFET at 7 nm technology node for nano scale applications [PDF]

Scientific Reports
The dual-material gate junctionless FinFET (DMG JLFinFET) has emerged as a promising device in semiconductor technology due to its enhanced capability to suppress short-channel effects (SCEs).
Rambabu Kusuma
doaj   +2 more sources

Ambipolar Transistors Based on Vertical Heterojunctions for Multivalued Logic Gates [PDF]

Small Science, Volume 6, Issue 11, November 2026.
We demonstrate a vertical heterojunction ambipolar transistor using a self‐assembled monolayer (SAM)‐modified interface that suppresses hole conduction and creates a distinct V‐shaped transfer characteristic. This design enables a ternary inverter with three stable logic states, tunable in the subthreshold regime, offering a simplified and efficient ...
Ke Zhou, Shengnan Liu, Yucai Yuan, Jiawei Hong, Zhixiang Ren, Yaxiao Lian, Xiaotao Zhang, Wentao Xiong, Chen Zou, Baodan Zhao, Wenping Hu, Dawei Di   +11 more
wiley   +2 more sources

Wafer‐Scale 3D Integration for High‐Density Multi‐Valued Neuromorphic Logic [PDF]

Advanced Science, Volume 13, Issue 63, 12 November 2026.
Wafer‐scale 3D vertically integrated multi‐valued logic (MVL) circuits are realized by monolithically integrating a Te/IGZO heterojunction FET with an engineered Te pull‐up FET. Heterointerface‐mediated transport and optimized current matching enable stable ternary operation, while vertical stacking reduces circuit footprint and interconnect complexity,
Chang‐Hyeon Kim, Min Seok Kim, Joong Bum Rhim, Tae In Kim, Hyuck‐In Kwon, Ick‐Joon Park   +5 more
wiley   +2 more sources

Generalised Impedance Converters with only Transconductance Elements and Grounded Capacitors

Active and Passive Electronic Components, 2002
Novel generalised impedance converters are presented, which use only transconductance elements and/or grounded capacitors for the realisation of a wide variety of immittance functions.
Iqbal A. Khan, Muslim T. Ahmed, Nigar Minhaj   +2 more
doaj   +2 more sources

A Tunable Quadrature Oscillator with Only Transconductance Elements and Grounded Capacitors

Active and Passive Electronic Components, 2002
A novel quadrature oscillator is realised with only transconductance elements (TEs) and grounded capacitors. The realised quadrature oscillator uses only two inverting and two non-inverting transconductance elements, along with two grounded capacitors ...
Iqbal A. Khan, Muslim T. Ahmed, Nigar Minhaj   +2 more
doaj   +2 more sources

Enhancement-mode GaAs MOSFETs with an In0.3 Ga0.7As channel, a mobility of over 5000 cm2/V ·s, and transconductance of over 475 μS/μm [PDF]

, 2007
We present metal-gate high-k-dielectric enhancement-mode (e-mode) III-V MOSFETs with the highest reported effective mobility and transconductance to date.
Moran, D.A.J., Asenov, A., Passlack, M., Li, X., Thayne, I.G., Droopad, R., Zhou, H., Abrokwah, J., Zurcher, P., Thoms, S., Rajagopalan, K., Hill, R.J.W., Macintyre, D., Jonathan Abrokwah, Ravi Droopad, Richard J. W. Hill, Xu Li, Iain G. Thayne, Haiping Zhou, Stephen Thoms, Matthias Passlack, Peter Zurcher, Asen Asenov, Douglas Macintyre, Karthik Rajagopalan, David A. J. Moran   +25 more
core   +1 more source

1 μm gate length, In_0.75Ga_0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm [PDF]

, 2008
The first demonstration of implant-free, flatband-mode In_0.75Ga_0.25As channel n-MOSFETs is reported. These 1 μm gate length MOSFETs, fabricated on a structure with average mobility of 7720 cm<sup ...
Moran, D.A.J., Ignatova, O., Asenov, A., Passlack, M., Li, X., Thayne, I.G., Droopad, R., Zhou, H., Fejes, P., Thoms, S., Rajagopalan, K., Hill, R.J.W., Macintyre, D.   +12 more
core   +1 more source