Results 11 to 20 of about 26,266 (261)
To meet the performance requirements of low power mobile devices, a device with a high ION/IOFF ratio at low-VDD is needed. TFETs are gaining popularity due to their low subthreshold slope and high transconductance compared to MOSFETs.
Tan Chun Fui, Ajay Kumar Singh
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Design of Low Voltage Low Power High Gain Operational Transconductance Amplifier
In this paper, a high gain structure of operational transconductance amplifier is presented. For low voltage operation with improved frequency response bulk driven quasi-floating gate MOSFET is used at the input.
Rajesh Durgam, S. Tamil, Nikhil Raj
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Transconductor and integrator circuits for integrated bipolar video frequency filters [PDF]
A description is presented of novel transconductor and integrator circuits which can be used in integrated video frequency filters in bipolar technology.
Heij, W.J.A. de +2 more
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2H MoTe2 (molybdenum ditelluride) has generated significant interest because of its superconducting, nonvolatile memory, and semiconducting of new materials, and it has a large range of electrical properties.
Kamoladdin Saidov +6 more
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Systematic Generation of Transconductance based Variable Gain Amplifier Topologies [PDF]
A systematic method for the generation of variable gain amplifier topologies is proposed. The generation is based on voltage controlled current sources (VCCSs) modelling saturated MOS transistors, resistors or combinations of these elements.
Klumperink, Eric A.M., Tuijl, A.J.M. van
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A low-cost 1 kHz–400 kHz operating frequency fully-active electrode bioimpedance measurement module, based on Howland current source, is presented in this paper.
Christos Dimas +5 more
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Advances on CMOS Folded-Cascode Operational Transconductance [PDF]
In this paper, a tutorial review on several structural improvements of the CMOS folded-cascode Operational Transconductance Amplifier (OTA) is presented. After a brief discussion on the structure and operation of the conventional Folded-Cascode Amplifier,
Mohammad Yavari
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Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications [PDF]
Based on careful calibration in respect of 70 nm n-type strained Si channel S/SiGe modulation doped FETs (MODFETs) fabricated by Daimler Chrysler, numerical simulations have been used to study the impact of the device geometry and various doping ...
Asenov, A. +8 more
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Analog Integrated Current Drivers for Bioimpedance Applications: A Review
An important component in bioimpedance measurements is the current driver, which can operate over a wide range of impedance and frequency. This paper provides a review of integrated circuit analog current drivers which have been developed in the last 10 ...
Nazanin Neshatvar +3 more
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A model of partially-depleted SOI MOSFETs in the subthreshold range
A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in cur- rent continuity equation, which is a key equation of the PD SOI MOSFETs model are ...
Andrzej Jakubowski
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