Results 51 to 60 of about 26,266 (261)

Electronically Tunable Resistorless Mixed Mode Biquad Filters [PDF]

, 2013
This paper presents a new realization of elec¬tronically tunable mixed mode (including transadmittance- and voltage-modes) biquad filter with single input, three outputs or three inputs, single output using voltage differ-encing transconductance ...
Kacar, F., Yesil, A.
core   +1 more source

CMOS design of chaotic oscillators using state variables: a monolithic Chua's circuit [PDF]

, 1993
This paper presents design considerations for monolithic implementation of piecewise-linear (PWL) dynamic systems in CMOS technology. Starting from a review of available CMOS circuit primitives and their respective merits and drawbacks, the paper ...
Delgado Restituto, Manuel, Rodríguez Vázquez, Ángel Benito   +1 more
core   +1 more source

Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors

Advanced Materials, EarlyView.
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi, Daniele Zucchelli, Zeinab Hamid, Christina Kousseff, Arup Sarkar, Aristea Pavlou, Zhitian Ling, Somayeh Kashani, Iain McCulloch, Paul W. M. Blom, Fabrizio Torricelli, Paschalis Gkoupidenis   +11 more
wiley   +1 more source

High-frequency two-input CMOS OTA for continuous-time filter applications [PDF]

, 2000
“This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders.
Alinii, Chiang, J. Glinianowicz, J. Jakusz, S. Szczepanski, Sackinger, Silva-Martinez, Steyaert, Sun, Sun, Szczepanski, Szczepanski, VanPeteghem, Y. Sun, Yang, Zarabadil   +15 more
core   +1 more source

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

Advanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu, Yingxue An, Luigi Fabiano, Qifan Li, Qingqing Wang, Feng Zhang, Wenlong Jin, Miao Xiong, Junpeng Ji, Ugo Bruno, Grzegorz Greczynski, Grazia Maria Lucia Messina, Xianjie Liu, Chi‐Yuan Yang, Simone Fabiano   +14 more
wiley   +1 more source

Co-optimized e-mode AlGaN/GaN HEMT with composite p-GaN recessed cap and etched doped buffer for simultaneous DC and RF performance enhancement [PDF]

Serbian Journal of Electrical Engineering
This study presents a theoretical analysis of the DC and RF characteristics of enhancement mode (E-mode) AlGaN/GaN High Electron Mobility Transistor (HEMT) utilizing symbiotic integration of advanced techniques e.g. composite gate structure with slightly
Al Fahad Abdullah, Jawad Md. Nafis, Talukder Arnab, Rahman Ifty Mohaiminur, Kabir Md. Maharaj   +4 more
doaj   +1 more source

Switched-transconductance techniques

Electronics Letters, 1993
A new circuit arrangement, described as a switched-transconductance (ST) circuit, comprising a continuous-time linear tunable transconductor and a discrete time current processor is proposed and its theoretical basis described. The approach allows impedance synthesis for tunable precision sampled-data applications.
C. Toumazou, N.C. Battersby
openaire   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Conductive Hydrogels for Exogenous Sensing and Cell Fate Control

Advanced Materials, EarlyView.
We engineer electrically conductive hydrogels by combining sulfated glycosaminoglycans with semiconducting polymers. These hydrogels bind bioactive proteins, including growth factors, whose release or retention can be modulated by low‐voltage stimulation. The hydrogels are also integrated as 3D channels in organic electrochemical transistors as part of
Teuku Fawzul Akbar, Carlos Alejandro Jimenez‐Rodriguez, Railia Biktimirova, Ilka Hermes, Thomas Kurth, My Duyen Pham, Mikhail Tsurkan, Jens Friedrichs, Francis L. C. Morgan, Hans Kleemann, Olga Guskova, Uwe Freudenberg, Peter Fratzl, Carsten Werner, Christoph Tondera, Ivan R. Minev   +15 more
wiley   +1 more source

Sub-micron, Metal Gate, High-к Dielectric, Implant-free, Enhancement-mode III-V MOSFETs [PDF]

, 2007
The performance of 300nm, 500nm and 1μm metal gate, implant free, enhancement mode III-V MOSFETs are reported. Devices are realised using a 10nm MBE grown Ga2O3/(GaxGd1-x)2O3 high-κ (κ=20) dielectric stack grown upon a δ-doped AlGaAs/InGaAs/AlGaAs ...
Abrokwah, J., Droopad, R., Hill, R.J.W., Li, X., McIntyre, D., Moran, D.A.J., Passlack, M., Rajagopalan, K., Thayne, I.G., Thoms, S., Zhou, H., Zurcher, P.   +11 more
core   +1 more source