Results 51 to 60 of about 14,891 (262)

Low-voltage organic transistors with high transconductance [PDF]

, 2020
This thesis presents the development of low-voltage organic thin-film transistors with high transconductance. This was achieved by employing ultra-thin bi-layer gate dielectric consisting of aluminium oxide (AlOx) and a self-assembled monolayer of ...
Al Ruzaiqi, Afra Salim Mohamed
core   +2 more sources

Understanding and Quantifying the Benefit of Graded Aluminum Gallium Nitride Channel High-Electron Mobility Transistors

Micromachines
Graded AlGaN channel High-Electron Mobility Transistor (HEMT) technology is emerging as a strong candidate for millimeter-wave applications, as superior efficiency and linearity performances can be achieved.
François Grandpierron, Elodie Carneiro, Lyes Ben-Hammou, Jeong-Sun Moon, Farid Medjdoub   +4 more
doaj   +1 more source

Co-optimized e-mode AlGaN/GaN HEMT with composite p-GaN recessed cap and etched doped buffer for simultaneous DC and RF performance enhancement [PDF]

Serbian Journal of Electrical Engineering
This study presents a theoretical analysis of the DC and RF characteristics of enhancement mode (E-mode) AlGaN/GaN High Electron Mobility Transistor (HEMT) utilizing symbiotic integration of advanced techniques e.g. composite gate structure with slightly
Al Fahad Abdullah, Jawad Md. Nafis, Talukder Arnab, Rahman Ifty Mohaiminur, Kabir Md. Maharaj   +4 more
doaj   +1 more source

Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors

Advanced Materials, EarlyView.
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi, Daniele Zucchelli, Zeinab Hamid, Christina Kousseff, Arup Sarkar, Aristea Pavlou, Zhitian Ling, Somayeh Kashani, Iain McCulloch, Paul W. M. Blom, Fabrizio Torricelli, Paschalis Gkoupidenis   +11 more
wiley   +1 more source

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

Advanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu, Yingxue An, Luigi Fabiano, Qifan Li, Qingqing Wang, Feng Zhang, Wenlong Jin, Miao Xiong, Junpeng Ji, Ugo Bruno, Grzegorz Greczynski, Grazia Maria Lucia Messina, Xianjie Liu, Chi‐Yuan Yang, Simone Fabiano   +14 more
wiley   +1 more source

Kink Effect, Transconductance Increase and Field Enhanced Electron-emission In Algaas/gaas Hemts

, 1990
Experimental results obtained in depletion AlGaAs/GaAs HEMTs showing the presence of a remarkable increase of transconductance with frequency associated with a kink effect in the current-voltage curves is reported.
C. CANALI, ZANONI, ENRICO, G. CASTELLANETA, F. MAGISTRALI, C. TEDESCO, M. SANGALLI, E. Zanoni   +6 more
core   +1 more source

A programmable BiCMOS transconductance-capacitor filter for high frequencies [PDF]

With advancements in CMOS technology, high speed analog circuits that were traditionally implemented with discrete circuit components can now be made monolithically.
Beck, Jeffery S.
core   +5 more sources

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

High‐Mobility Chalcogenophene‐Engineered Diketopyrrolopyrrole Mixed Ionic‐Electronic Conductors With Doping Tolerance for Low‐Power Organic Electrochemical Transistors

Advanced Materials, EarlyView.
Chalcogen substitution emerges as a powerful strategy for designing high‐performance OMIECs. In aliphatic–glycol side chain diketopyrrolopyrrole polymers, biselenophene incorporation promotes a planar, polarizable, and doping‐tolerant quinoidal framework, enabling PDPP‐4EG‐Se2 to combine high hole mobility, large µC*, enhanced operational stability ...
Shinbee Oh, Tae Hoon Kim, Dahyun Jeong, Ji Hwan Kim, Seungjin Lee, Tan Ngoc‐Lan Phan, Alexander Tipan‐Quishpe, Myung‐Han Yoon, Keehoon Kang, Bumjoon J. Kim   +9 more
wiley   +1 more source

Modified current differencing transconductance amplifier - new versatile active element [PDF]

, 2012
This paper introduces a new current mode component called Modified Current Differencing Transconductance Amplifier (MCDTA). Important parameters of the circuit i.e.
Malcher, A.
core