Results 71 to 80 of about 26,266 (261)
Quantum interference and phonon-mediated back-action in lateral quantum dot circuits
, 2012 Spin qubits have been successfully realized in electrostatically defined, lateral few-electron quantum dot circuits. Qubit readout typically involves spin to charge information conversion, followed by a charge measurement made using a nearby biased ...
Clerk, A. A. +13 more
core +1 more source
A 0.18μm CMOS 9mW current-mode FLF linear phase filter with gain boost [PDF]
, 2007 “This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders.
Moritz, J., Sun, Y., Zhu, X.
core +1 more source
Transconductance as a probe of nonlocality of Majorana fermions [PDF]
Journal of Physics: Condensed Matter, 2019 Abstract Each end of a Kitaev chain in topological phase hosts a Majorana fermion. Zero bias conductance peak is an evidence of Majorana fermion when the two Majorana fermions are decoupled. These two Majorana fermions are separated in space and this nonlocal aspect can be probed when the two are coupled. Crossed Andreev reflection is
openaire +3 more sources
Fabrication of High‐Density Multimodal Neural Probes Based on Heterogeneously Integrated CMOS
Advanced Science, EarlyView.A chiplet‐based methodology democratizes active neural probe development on standard bulk CMOS services. This yields the first probe combining high‐density electrophysiology (416 electrodes) with calcium imaging (832 photodiodes) and complete on‐chip signal processing across 13 shanks.
Ju Hee Mun +10 more
wiley +1 more source
gm/Id$g_m/I_d$ Analysis of vertical nanowire III–V TFETs
Electronics Letters, 2023 Experimental data on analog performance of gate‐all‐around III‐V vertical Tunnel Field‐Effect Transistors (TFETs) and circuits are presented. The individual device shows a minimal subthreshold swing of 44 mV/dec and transconductance efficiency of 50 V−1 ...
Gautham Rangasamy +3 more
doaj +1 more source
180nm metal gate, high-k dielectric, implant-free III--V MOSFETs with transconductance of over 425 μS/μm [PDF]
, 2007 : Data is reported from 180 nm gate length GaAs n-MOSFETs with drive current (Ids,sat) of 386 μA/μm (Vg=Vd =1.5 V), extrinsic transconductance (gm) of 426 μS/μm, gate leakage ( jg,limit) of 44 nA/cm2, and on resistance (Ron) of 1640 Ω μm. The gm and Ron
Droopad, R. +8 more
core +1 more source
Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing
Advanced Science, EarlyView.α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo +12 more
wiley +1 more source
Electrica, 2005 In this paper, new realization techniques to enhance the performance of the CMOS differential output transconductance amplifiers (DO-OTAs) are proposed by combining the high-performance input and output stages given in the literature.
Burçin Serter Ergün, H. Hakan Kuntman
doaj +2 more sources
Journal of Nanotechnology, 2011 We report an all-printed thin-film transistor (TFT) on a polyimide substrate with linear transconductance response. The TFT is based on our purified single-walled carbon nanotube (SWCNT) solution that is primarily consists of semiconducting carbon ...
Guiru Gu +15 more
doaj +1 more source
Buried Unstrained Germanium Channels: A Lattice‐Matched Platform for Quantum Technology
Advanced Science, EarlyView.ABSTRACT Strained germanium (ε$\varepsilon$‐Ge) and strained silicon (ε$\varepsilon$‐Si) buried quantum wells have enabled advanced spin‐qubit quantum processors. However, in the absence of suitable lattice‐matched substrates, ε$\varepsilon$‐Ge and ε$\varepsilon$‐Si are deposited on defective, metamorphic SiGe buffers, which may impact device ...
Davide Costa +10 more
wiley +1 more source