Results 81 to 90 of about 10,598 (239)
Advanced Electronic Materials, EarlyView.ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram +10 more
wiley +1 more source
A Novel Low-Voltage Floating-Gate Cmos
, 2007 In this paper we present an ultra lowvoltage (ULV) floating-gate (FG) transconductance amplifier The amplifier can operate at supply voltages down to 0.3V in a standard digital double poly CMOS process.
Transconductance Amplifier With
core
Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory
Advanced Electronic Materials, EarlyView.For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley +1 more source
Advanced Electronic Materials, EarlyView.A simple reprocessing strategy based on freeze‐drying and re‐dissolution is introduced to enhance the electrical performance of self‐doped PEDOT while preserving its intrinsic environmental stability. The reprocessed S‐PEDOT enables organic electrochemical transistors with improved drain current, transconductance, and robust operation under high ...
Ruifeng Xu +4 more
wiley +1 more source
Ultra low-voltage low-power current conveyor transconductance amplifier
, 2015 478-487This paper presents ultra low-voltage (LV) low-power (LP) CMOS structure for Current Conveyor Transconductance Amplifier (CCTA). The proposed structure is performed using recently presented technique named bulk-driven quasi-floating gate (BD ...
Kumngern, Montree +4 more
core +3 more sources
Advanced Electronic MaterialsThe existing device models for organic electrochemical transistors (OECTs) fail to provide any device design guidelines for optimized performance parameters such as transconductance that are pivotal for the applications OECTs in sensing.
Ned E. Dreamer +4 more
doaj +1 more source
MicromachinesGraded AlGaN channel High-Electron Mobility Transistor (HEMT) technology is emerging as a strong candidate for millimeter-wave applications, as superior efficiency and linearity performances can be achieved.
François Grandpierron +4 more
doaj +1 more source
Realization of Electronic OTA Amplifiers with Linear and Tunable Transconductance and its Usages in Continuous - Filters [PDF]
Journal of Intelligent Procedures in Electrical Technology, 2012 The aim of this paper is the introduction of a CMOS OTA basic block that its transconductance gain can be electronically and linearly tuned. This transconductance is proportional to the square root of the bias current.
Ebrahim Borzabadi +2 more
doaj
Advanced Electronic Materials, EarlyView.Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink +6 more
wiley +1 more source
The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices
, 2001 There are two key points to get high transconductance of pseudomorphic HEMTS (pHEMTs) devices. From the point view of materials, the transfer efficiency of the electrons from the delta -doped AlGaAs layer to the InGaAs channel must be high.
Cao X +6 more
core