Results 81 to 90 of about 26,266 (261)

Single-electron transport driven by surface acoustic waves: moving quantum dots versus short barriers

, 2006
We have investigated the response of the acoustoelectric current driven by a surface-acoustic wave through a quantum point contact in the closed-channel regime.
A.M. Robinson, C. B. Sørensen, C.H.W. Barnes, C.L. Foden, G.R. Aizin, J. Bindslev Hansen, J. Cunningham, J. Cunningham, J. Cunningham, J. Ebbecke, J. Ebbecke, J. Ebbecke, J.A. Nixon, J.H. Davies, J.L. Flowers, J.M. Shilton, J.P. Pekola, K. Flensberg, K. Gloos, K. Gloos, K. Gloos, L.P. Kouwenhoven, M. Switkes, M.A. Topinka, M.A. Topinka, M.W. Keller, N.E. Fletcher, N.M. Zimmermann, P. E. Lindelof, P. Utko, P. Utko, P. Utko, S. Furuta, V. Kashcheyevs, V.I. Talyanskii   +34 more
core   +1 more source

Very wide range tunable CMOS/bipolar current mirrors with voltage clamped input [PDF]

, 1999
In low power current mode signal processing circuits it is often necessary to use current mirrors to replicate and amplify/attenuate current signals and clamp the voltage of nodes with high parasitic capacitances so that the smallest currents do not ...
Andreou, Andreas G., Linares Barranco, Bernabé, Serrano Gotarredona, María Teresa   +2 more
core   +1 more source

Thermoelectric Gating Organic Electrochemical Transistors Enabled by Printable Ionogels With n‐p Convertible Thermopower

Advanced Science, EarlyView.
A type of thermoelectric ionogels with convertible n‐p thermopowers are demonstrated with Seebeck coefficients ranging from ‐3.61 to +9.74 mV K−1. Thus, thermoelectric gating organic electrochemical transistor is achieved by employing ionogel as thermoelectric modules and ionic dielectrics simultaneously, paving the road to self‐powered, highly ...
Xingyu Hu, Xinwen Yan, Ling Huang, Xiaohang Zhang, Xuan Cao, Cong Zhang, Qingqing Sun, Hanyu Jia, Xuying Liu   +8 more
wiley   +1 more source

A 1-nS 1-V Sub-1-µW Linear CMOS OTA with Rail-to-Rail Input for Hz-Band Sensory Interfaces

Sensors, 2020
The paper presents an operational transconductance amplifier (OTA) with low transconductance (0.62–6.28 nS) and low power consumption (28–270 nW) for the low-frequency analog front-ends in biomedical sensor interfaces.
Jacek Jakusz, Waldemar Jendernalik, Grzegorz Blakiewicz, Miron Kłosowski, Stanisław Szczepański   +4 more
doaj   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs [PDF]

, 2012
Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors.
Kuball, M., Silvestri, M., Uren, M. J.
core   +2 more sources

High Mobility (>200 cm2 V−1 s−1) Transparent Top Gate IGZO TFTs with Oxidized Metal Gate Insulator for Enhanced Conductivity

Advanced Electronic Materials, EarlyView.
We demonstrate a top gate Nb capping TFT architecture that induces controlled oxygen out‐diffusion from the IGZO channel. This mechanism generates shallow donor states and enhances electron delocalization, enabling extended percolation pathways. The resulting thin‐film transistors exhibit high mobility, suppressed leakage currents, and strong optical ...
Hyeonjeong Sun, Yeoeun Yun, Kyubin Hwang, Jiyoung Bang, Seungmin Choi, Seungjae Lee, Taeyang Kim, Suhwon Choi, Eunsuk Choi, Jae Kyeong Jeong, Seung‐Beck Lee   +10 more
wiley   +1 more source

MOF-MoS2 nanosheets doped PEDOT:PSS for organic electrochemical transistors in enhanced glucose sensing and machine learning-based concentration prediction

Materials Futures
Organic electrochemical transistors (OECTs) are regarded as a promising platform for chemical and biological sensing due to their biocompatibility, cost-effectiveness and flexibility. However, maintaining long-term stability of OECTs while achieving high
Yali Sun, Yun Li, Yang Zhou, Ting Cai, Yuxuan Chen, Chao Zou, Han Song, Shenghuang Lin, Shenghua Liu   +8 more
doaj   +1 more source

Exploration and Analysis of Temperature and Performance of Compound Semiconductor-Based Junctionless GAA FET

IEEE Access
The device dimension down scaling beyond 14 nm technology node utilization of device architecture and new materials is a need of the semiconductors industry. In this paper, three materials, In $_{\mathrm {1-x}}$ GaxAs/ In $_{\mathrm {1-x}}$ GaxP, In $_{1-
Jeevanarao Batakala, Rudra Sankar Dhar, Kuleen Kumar, Arindam Biswas, Saurav Mallik, Naim Ahmad, Wade Ghribi, Ahmed Said Badawy   +7 more
doaj   +1 more source

Realization of Electronic OTA Amplifiers with Linear and Tunable Transconductance and its Usages in Continuous - Filters [PDF]

Journal of Intelligent Procedures in Electrical Technology, 2012
The aim of this paper is the introduction of a CMOS OTA basic block that its transconductance gain can be electronically and linearly tuned. This transconductance is proportional to the square root of the bias current.
Ebrahim Borzabadi, Hamid Reza Taghva, Homayoun Mahdavi-Nasab   +2 more
doaj