Results 91 to 100 of about 10,598 (239)
Techniques for the Improvement in the Transconductance of a Bulk Driven Amplifier
, 2020 This paper proposed methods for the improvement of transconductance in the bulk driven operation amplifier. Here we are using four technologies for the enhancement of transconductance.
core
AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]
, 2011 Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al<sub>2</sub>O<sub>3</sub> as a gate dielectric and surface
Wasige, E. +5 more
core +1 more source
Prediction of GaAs metal–semiconductor field-effect transistor parameter spread
Технологія та конструювання в електронній апаратурі, 2006 It is shown that for Schottky-barrier field-effect transistors based on three-layer GaAs structures (film – buffer layer – substrate), the parameter spread caused by the nonuniform distribution of deep centers across the wafer can be characterized by a ...
N. B. Gorev +2 more
doaj
Advanced Intelligent Discovery, EarlyView.Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj +2 more
wiley +1 more source
CMOS operational transconductance amplifiers with extended transconductance adjustment ranges
, 1991 Typescript (photocopy)VitaMajor subject: Electrical EngineeringTechniques are developed for realizing CM OS transconductance amplifiers with increased transconductance adjustment ranges.
Adams, William John
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Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology
Advanced Intelligent Discovery, EarlyView.Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh +3 more
wiley +1 more source
CMOS Transconductance Amplifier Design
, 2008 The work deals with question of design and simulation of integrated analog circuits in CMOS technology. The general aim of my thesis is to design transconductance amplifier and analyze its frequency response and stability in feedback systems.
Zelinka, Miloslav
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, 2017 In this paper, we present new voltage mode quadrature oscillator, employing single differential difference transconductance amplifier. The proposed oscillator structure consists of two grounded capacitors and a single resistor.
Kacar, F. +5 more
core +1 more source
Linear CMOS transconductance element for VHF filters [PDF]
, 1989 A differential transconductance element based on CMOS inverters is presented. With this circuit a linear, tunable integrator for very high-frequency continuous-time integrated filters can be made.
Seevinck, E., Nauta, Bram
core +1 more source
On the Design of a Class of Analog Filters Whose Impulse Response Is a Mittag‐Leffler Function
International Journal of Circuit Theory and Applications, EarlyView.Fractional‐order filters whose impulse response is a Mittag‐Leffler (M‐L) function in any of its known forms are summarized in this work. Simulation results using Cadence and experimental results using an FPAA validate the introduced concept. ABSTRACT Fractional‐order filters whose impulse response is a Mittag‐Leffler (M‐L) function in any of its known
Julia Nako +3 more
wiley +1 more source