Results 91 to 100 of about 14,891 (262)

Simulation study on high-linearity GaN HEMT featuring graded-composition composite channel

Dianzi Jishu Yingyong
This work proposes and simulates a high-linearity GaN HEMT device using Technology Computer Aided Design (TCAD). The device features a composite channel based on graded-composite AlGaN and InGaN layers.
Li Shiquan, Cai Likang, Lin Gang, Zhang Junyun   +3 more
doaj   +1 more source

Gate Metal‐Driven Sensing and Memory Bifunctionality in Intrinsically Stretchable Organic Electrochemical Transistors for Soft Neuromorphic Systems

Advanced Science, EarlyView.
Intrinsically stretchable OECTs enable bifunctional operations via gate engineering. Polarizable Ag/AgCl gates provide volatile sensing, while Au gates enable non‐volatile memory. The SEBS‐blended channel maintains performance under strain, supporting reliable signal transduction.
Jiyong Yoon, Jaepyo Jang, Hyunjin Jung, Duhwan Seong, Daeun Kim, Yewon Jeon, Ja Hoon Koo, Sang Min Won, Donghee Son   +8 more
wiley   +1 more source

Digitally programmable transconductance amplifier for CNN applications

, 1994
A major problem in the VLSI implementation of cellular neural networks (CNNs) is that of achieving ease of programmability of the templates. The authors present a very efficient VLSI implementation of a digitally programmable transconductance amplifier ...
SARGENI, FAUSTO, Sargeni, F, F. Sargeni
core   +1 more source

A Very‐High Frequency Solution‐Processed Organic Field‐Effect Transistor With Improved Voltage‐Normalized Frequency of Transition

Advanced Science, EarlyView.
Increasing the frequency at which organic electronics operate while limiting the operation voltage is key to enabling future sustainable wireless applications. This work shows p‐type organic field‐effect transistors based on a molecularly doped, small molecule/polymer blend (C8‐BTBT:C16IDT‐BT), fabricated via direct‐writing and solution‐processing ...
Tommaso Losi, Kyle van Oosterhout, Martino Cambiaggio, Martin Heeney, Qiao He, Hans Kleemann, Alessandro Luzio, Eugenio Cantatore, Mario Caironi   +8 more
wiley   +1 more source

CMOS operational transconductance amplifiers with extended transconductance adjustment ranges

, 1991
Typescript (photocopy)VitaMajor subject: Electrical EngineeringTechniques are developed for realizing CM OS transconductance amplifiers with increased transconductance adjustment ranges.
Adams, William John
core   +1 more source

Organic Electrochemical Transistors for Neuromorphic Bioelectronics: Materials and Manufacturing Technologies

Advanced Science, EarlyView.
Organic electrochemical transistors bridge biological ionic signaling and neuromorphic computation through volumetric electrochemical gating. This review connects Organic mixed ionic–electronic conductor materials, device architectures, and manufacturing technologies to show how geometry, ion transport, and fabrication strategies program plasticity ...
Hyunjin Lee, Jihyang Park, Xinyi Wang, Yueqi Deng, Jiashu Ren, Tao Zhou   +5 more
wiley   +1 more source

CMOS Transconductance Amplifier Design

, 2008
The work deals with question of design and simulation of integrated analog circuits in CMOS technology. The general aim of my thesis is to design transconductance amplifier and analyze its frequency response and stability in feedback systems.
Zelinka, Miloslav
core  

Solvent‐Desorption‐Induced Formation of a Long‐Period Polymorph Yielding a High‐Performance Porphyrin‐Based Organic Semiconductor

Advanced Science, EarlyView.
Solvent‐desorption‐induced structural transformation of 5,15‐bisphenyl‐tetrabenzoporphyrin generates a long‐period polymorph, in which the π‐stacking direction rotates by 90° between adjacent layers within the crystal while largely retaining crystallographic integrity.
Kazuya Miyazaki, Keitaro Yamamoto, Mitsuaki Yamauchi, Yoshiyuki Mizuhata, Hiroshi Matsuda, Nobutaka Shioya, Takeshi Hasegawa, Hiroko Yamada   +7 more
wiley   +1 more source

The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices

, 2001
There are two key points to get high transconductance of pseudomorphic HEMTS (pHEMTs) devices. From the point view of materials, the transfer efficiency of the electrons from the delta -doped AlGaAs layer to the InGaAs channel must be high.
Cao X, Zeng YP, Kong MY, Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China., Pan L, Zhu ZP, Wang BQ   +6 more
core  

Z-copy Voltage Controlled Current Follower Differential Input Transconductance Amplifier in Controllable Biquadratic Band-Pass Filter [PDF]

, 2016
This paper presents the results of study on utilization of Z-copy Voltage Controlled Current Follower Differential Input Transconductance Amplifier (ZCVCCFDITA) active element in a single purpose filtering structure. This active element has three voltage-
Vrba, Kamil, Jerabek, Jan, Sotner, Roman, Dostal, Tomas   +3 more
core   +1 more source