Results 111 to 120 of about 26,266 (261)

Digitally Programmable Integrator and Differentiator

open access: yesActive and Passive Electronic Components, 1995
Digitally programmable integrator and differentiator circuits are presented. Each circuit uses at most one operational amplifier, two operational transconductance amplifiers, and one capacitor.
Abdulrahman Khalaf Al-Ali   +2 more
doaj   +1 more source

Finding all elementary circuits exploiting transconductance

open access: yesISCAS 2001. The 2001 IEEE International Symposium on Circuits and Systems (Cat. No.01CH37196), 2001
Summary: Commonly used elementary circuits like single-transistor amplifier stages, the differential pair, and current mirrors basically exploit the transconductance property of transistors. This paper aims at finding all elementary transconductance-based circuits.
Klumperink, Eric A.M.   +2 more
openaire   +4 more sources

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

open access: yesAdvanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj   +2 more
wiley   +1 more source

A Tunable Quadrature Oscillator with Only Transconductance Elements and Grounded Capacitors

open access: yesActive and Passive Electronic Components, 2002
A novel quadrature oscillator is realised with only transconductance elements (TEs) and grounded capacitors. The realised quadrature oscillator uses only two inverting and two non-inverting transconductance elements, along with two grounded capacitors ...
Iqbal A. Khan   +2 more
doaj   +1 more source

Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology

open access: yesAdvanced Intelligent Discovery, EarlyView.
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh   +3 more
wiley   +1 more source

Theoretical Model of I-V Characteristics of pH-Sensitive Organic Electrochemical Transistors Based on Sigmoid Function

open access: yesTaiyuan Ligong Daxue xuebao
[Purposes] Previously, pH sensors have been fabricated based on pH-sensitive poly (3,4-ethylenedioxythiophene)/bromothymol blue film and the semiconducting layer of poly (3,4-ethylenedioxythiophene)/polystyrene sulfonate and a theoretical model has been ...
WANG Zhenxing   +7 more
doaj   +1 more source

Grounded Capacitor Oscillators Using A Single Operational Transconductance Amplifier

open access: yesActive and Passive Electronic Components, 1996
New oscillator circuits using operational transconductance amplifiers (OTAs) are presented. Each circuit uses a single OTA and grounded capacitors.
Muhammad Taher Abuelma'atti   +1 more
doaj   +1 more source

A Comprehensive Study of Threshold Voltage Extraction Techniques From Room to Cryogenic Temperatures

open access: yesIEEE Journal of the Electron Devices Society
In this article, we present a comprehensive overview of the negative transconductance observed in native (or zero-threshold) MOSFETs at cryogenic temperatures.
Wajid Manzoor   +2 more
doaj   +1 more source

Design issues in cross-coupled inverter sense amplifier [PDF]

open access: yes, 1998
This paper presents an analytical approach to the design of CMOS cross-coupled inverter sense amplifiers. The effects of the equilibrating transistors and the tail current source on the speed of the sense amplifier are analyzed. An analysis of the offset
Hajimiri, Ali, Heald, Raymond
core  

Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures

open access: yesIEEE Journal of the Electron Devices Society
This work aims to perform a comprehensive comparison of the electrical properties of junctionless and inversion-mode nanowires MOSFETS, fabricated with similar gate stack and state-of-art process, in the temperature range from 300 K to 580 K.
Rhaycen R. Prates   +5 more
doaj   +1 more source

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