Results 41 to 50 of about 761 (143)

Flanking‐Group Engineering Unlocks Emerging Functionalities in Diketopyrrolopyrrole Semiconductors

Advanced Science, EarlyView.
This review presents a comprehensive and unified perspective of flanking‐group engineering in Diketopyrrolopyrrole (DPP) based organic semiconductors that connects molecular‐level design with cross‐device functionalities. By integrating insights from molecular design, solid‐state packing, and device physics, this review seeks to establish general ...
Xiaoyun Wu, Shanshan Zhou, Meng Li, Aung Ko Ko Kyaw, Xiao‐Lei Shi, Qian Liu   +5 more
wiley   +1 more source

A special technique for Recycling Folded Cascode OTA to improve DC gain, bandwidth, CMRR and PSRR in 90 nm CMOS process

Ain Shams Engineering Journal, 2020
Design and simulation of an improved recycling folded cascode (RFC) operational transconductance amplifier (OTA) is presented. The new idea is based on minor changes in the conventional structure.
Ghader Yosefi
doaj   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

Programmable CF-OTA-Based Lowpass and Bandpass Filters

Active and Passive Electronic Components, 1995
A new circuit is proposed for realizing lowpass and bandpass filter responses. The circuit uses one current-follower and one operational transconductance amplifier.
Muhammad Taher Abuelma'atti, Azhar Quddus   +1 more
doaj   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

A bulk-driven, buffer-biased, gain-boosted amplifier for biomedical signal enhancement

Cogent Engineering, 2019
The growing consciousness in health, biomedical research area is becoming most sought-after to develop or design medical devices by bringing biomedical researchers and clinicians to solve many health issues.
Sarin Vijay Mythry, D. Jackuline Moni
doaj   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

Novel CCI-OTA-Based Grounded Capacitor Current-Mode Biquadratic Bandpass and Lowpass Filters

Active and Passive Electronic Components, 1994
A novel current-mode active filter topology using a first generation current conveyor (CCI) and an operational transconductance amplifier (OTA) is presented.
Muhammad Taher Abuelma'atti
doaj   +1 more source

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

Advanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink, Jean‐Charles Fustec, Olivier de Sagazan, Rogier Fransen, George Bairaktatis, Emmanuel Jacques, Radu A. Sporea   +6 more
wiley   +1 more source

Controllable Ge Hut Wires With Mobilities Exceeding 20 000 cm2 V−1 s−1

Advanced Electronic Materials, EarlyView.
The controlled growth of germanium hut wires on patterned SiGe/Si(001) substrates is reported. These self‐assembled nanowires achieve a record hole mobility of 22 900 cm2 V−1 s−1 at 4.2 K. Remarkably, conductance quantization is observed at a channel length of 1.9 µm, highlighting their exceptionally low disorder and paving the way for scalable, high ...
Ming Ming, Jian‐Huan Wang, Jie‐Yin Zhang, Ding‐Ming Huang, Dan Han, Ting Wang, Jing Teng, Jian‐Jun Zhang   +7 more
wiley   +1 more source