Results 251 to 260 of about 409,231 (284)

Optical Emission Spectroscopy

1986
Abstract This article discusses the general principles, optical systems, and emission sources of optical emission spectroscopy for elemental analysis. Changes in the energy of the valence or outer shell electrons result in the atomic lines used in emission spectroscopy.
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Focused ion beam induced optical emission spectroscopy

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1988
We describe a focused ion beam system and a spectroscopic technique that utilize photons emitted from electronically excited sputtered neutrals for surface element identification and end-point detection. When a target is bombarded by a focused ion beam, some of the sputtered atoms (as much as 0.2%) leave the surface in electronically excited states and
B. W. Ward, M. Ward, D. Edwards, N. P. Economou   +3 more
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Physical Processes in Optical Emission Spectroscopy

2014
Different aspects of physical processes in optical emission spectroscopy are analyzed in equilibrium and non equilibrium conditions. A very simple but accurate method to calculate the partition function of atomic species based on the reduction of the energy level pattern to a three grouped levels system is introduced.
Capitelli Mario, Colonna Gianpiero, D'Ammando Giuliano, Gaudiuso Rosalba, Pietanza Lucia Daniela   +4 more
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Emission yields in glow discharge optical emission spectroscopy

Spectrochimica Acta Part B: Atomic Spectroscopy, 1993
Abstract Emission yields of 13 lines of 11 elements have been determined for four matrices (Fe, Al, Ni, Cu) and for different discharge conditions in a Grimm-type glow discharge source. The results are discussed from the point of view of the concept of matrix-independent emission yields, which has been frequently used as a basis for quantification of
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Analysis of Optical Emission Spectroscopy on Discharges

AIP Conference Proceedings, 2006
Optical spectroscopy is investigated with respect to its capabilities to yield temperature information from line intensities of low temperature plasmas. The method is non‐invasive and easy to perform experimentally. The data analysis model consists of a population model describing the intensities of light emission.
D. Dodt, A. Dinklage, R. Fischer, D. Loffhagen   +3 more
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Optical emission spectroscopy of electrical focii discharges

Journal of Physics D: Applied Physics, 1997
The optical emission from a dense magnetized plasma column (the Z pinch) was studied in experiments with a 1 kJ plasma focus using an optical multichannel analyser (OMA III). The plasma column (about 10 mm length and about 1 mm diameter) generated at the end of the co-axial discharge had a density of about , a duration of about 200 ns and a maximum ...
J Feugeas, G Grigioni
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Optical emission spectroscopy of lead sulfide films plasma deposition

Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 2020
In-situ Optical Emission Spectroscopy (OES) combined with quantum chemical calculations was used as a powerful tool to find out the exited reactive species existing in plasma discharge during the process of lead sulfide chalcogenide materials deposition.
Leonid Mochalov, Dominik Dorosz, Marcin Kochanowicz, Alexander Logunov, Aleksey Letnianchik, Nikolay Starostin, Sergey Zelentsov, Glenn Boreman, Vladimir Vorotyntsev   +8 more
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Selective Filtration in Optical Emission Spectroscopy

Applied Spectroscopy, 1972
Determination of the most common elements by optical emission spectroscopy ordinarily requires two analyses. The first analysis is run in the 2300 to 3500 A uv range using a grating properly blazed to this range that has high linear dispersion. The second analysis is performed where the most sensitive lines of the alkali and alkaline-earth elements ...
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Optical emission spectroscopy in cathodic arc deposition

Proceedings of 17th International Symposium on Discharges and Electrical Insulation in Vacuum, 1997
Titanium and chromium arc discharges in nitrogen and argon in the pressure range between 10/sup -3/ and 1 Pa have been studied using optical emission spectroscopy and electric probes. The pressure dependence of normalized line intensities could be explained in terms of the metal vapor generation at the cathode as well as ion-molecule collisions in the ...
M. Kuhn, R. Pintaske, F. Richter
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Optical emission spectroscopy of argon-silane plasma

Russian Physics Journal, 2011
Increase in the concentration of silane radicals in plasma is extremely important for deposition of thin silicon films used in industry, in particular, for manufacturing of solar elements by the method of chemical plasma deposition. The manufacture of solar elements is a direct way to the development of cheap and non-polluting energy sources. Reduction
V. I. Strunin, A. S. Demin, G. Zh. Hudaibergenov   +2 more
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