Results 261 to 270 of about 409,231 (284)

Plasma etch modeling using optical emission spectroscopy

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1996
Plasma etching is often considered a yield limiter in the manufacturing of submicron integrated circuit devices. Much effort has been devoted to developing reliable models that relate the process outputs to variations in real-time sensor signals. These models, called chamber state models, allow semiconductor manufacturers to predict etch behavior.
Roawen Chen, Herb Huang, C. J. Spanos, Michael Gatto   +3 more
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Optical Spectroscopy in Emission Measurements

1994
The energy of molecules is the sum of translational, rotational, vibrational and electronic energies: $$ {E_{{\text{mol}}}}{\text{ = }}{E_{{\text{trans}}}}{\text{ + }}{E_{{\text{rot}}}}{\text{ + }}{E_{{\text{vib}}}}{\text{ + }}{E_{{\text{el}}}} $$ From the point of view of the molecular spectra, translational energy E trans is not of ...
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End point control via optical emission spectroscopy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1996
We have studied the use of optical emission spectroscopy for end point detection in two dry etch applications: SiO2 contact etch in both parallel plate (diode) and high density plasma reactors, and high selectivity poly-Si over SiO2 etch in a chemical downstream reactor, where chemiluminescence is the source of optical emission. We show that useful end
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[Optical emission spectroscopy of MPCVD plasma].

Guang pu xue yu guang pu fen xi = Guang pu, 2015
The plasma of CH4/H2 was diagnosed with optical emission spectroscopy on a high-pressure microwave plasma apparatus at 2.45 GHz. The existing radicals in the plasma and the influence of the methane concentration on radical concentration and distribution were researched.
Zhi-bin, Ma, Jian-peng, Wu, Li-ping, Tao, Wei, Cao, Guo-wei, Li, Jian-hua, Wang   +5 more
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Optical Emission Spectroscopy Measurement of Processing Plasmas

IEEJ Transactions on Fundamentals and Materials, 2010
The present paper reviews fundamentals of optical emission spectroscopy (OES) of plasmas and, in particular, its applications to processing plasmas. Collisional radiative model is described to understand the excitation kinetics and population distributions of excited states in order to examine the electron temperature and density.
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Optical emission spectroscopy of zinc sulfide etch

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1992
Optical emission spectroscopy was used to gain insight into the reactive ion etching (RIE) of zinc sulfide films in a hydrogen plasma. Evaporated, metal organic chemical vapor deposited (MOCVD), and sputtered zinc sulfide films were examined. The zinc atomic emission at 472 nm was used to monitor the etching reaction. Hydrogen atom emissions at 656 and
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NbN film deposition using optical emission spectroscopy

IEEE Transactions on Magnetics, 1987
NbN films were deposited on unheated Si substrates by dc and rf reactive planar magnetron sputtering of Nb in an Ar and N 2 gas mixture. The optical emission spectrum of the plasma was recorded for different sputtering conditions and the target sputtering rate was found to be proportional to the intensity of any Nb emission line.
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Optical Emission Spectroscopy of Argon Plasma Jet

Advanced Materials Research, 2013
Argon plasma jet in a single-electrode configuration was generated at low temperature and atmospheric pressure by 50 kHz radiofrequency power supply. Optical Emission Spectroscopy (OES) was used to investigate the local emissivity of argon plasma in the range between 200 and 1,100 nm.
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Inductively coupled plasma. Optical emission spectroscopy

Analytical Chemistry, 1974
Velmer A. Fassel, Richard N. Kniseley
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Emission Spectroscopy in Optically Thick Gas Discharges

1990
Information on the processes occurring in a gas discharge can be obtained from the spectral lines emitted by the plasma (see f.e. Refs. 1–5). A line may be optically thin (optical depth much less than unity) or optically thick (optical depth much higher than unity).
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