Results 201 to 210 of about 4,749,527 (270)

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

open access: yesAdvanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen   +9 more
wiley   +1 more source

Core and π‐Bridge Engineering to Deconstruct Y6‐Series into Modular Non‐Fused Acceptors: DFT‐Guided Structure‐Property Map for Organic Solar Cells

open access: yesAdvanced Electronic Materials, EarlyView.
The rigid fused backbone of Y6‐series acceptors is deconstructed into a modular, non‐fused A‐π‐A′‐π‐A architecture. Comprehensive quantum chemical simulations reveal that strategic core and π‐bridge engineering preserves strong near‐infrared light‐harvesting and enhances intramolecular charge‐transfer character.
Qurat ul Ain   +7 more
wiley   +1 more source

Perspective: Quantum Computing on Magnetic Racetrack

open access: yesAdvanced Electronic Materials, EarlyView.
Magnetic domain walls emerge as mobile qubits on quantum racetracks, where chirality encodes quantum information and current‐driven motion enables flying‐qubit functionality. This Perspective outlines the physical principles, gate mechanisms, material requirements, and experimental roadmap for realizing scalable quantum computing with magnetic textures,
Ji Zou, Jelena Klinovaja, Daniel Loss
wiley   +1 more source

Dual‐Defect‐Engineered Zinc Oxynitride Thin‐Film Transistors Enabling Electrostatic Current Balancing in Geometrically Symmetric Oxide Logic

open access: yesAdvanced Electronic Materials, EarlyView.
Dual‐defect engineering controls subgap states in zinc oxynitride (ZnON) thin‐film transistors, yielding a field‐effect mobility of 26.58 cm2 V−1 s−1. A process‐associated threshold‐voltage shift is repurposed within a dual‐gate depletion‐mode load to electrostatically balance current in a geometrically symmetric NMOS inverter.
Seung Min Lee   +10 more
wiley   +1 more source

Highly Stabilized Ni‐Rich Cathodes Enabled by Artificially Reversing Naturally‐Formed Interface

open access: yesAdvanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
The application of Ni‐rich cathode materials is obstructed by interfacial and structural instability. This work proposes a facile and cost‐effective Al‐based vapor‐phase surface reaction strategy on Ni‐rich cathode to maintain its structural integrity from near‐surface to bulk.
Jinjin Ma   +11 more
wiley   +1 more source

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