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The Limitations of Optical Image Formation
Transactions of the New York Academy of Sciences, 1946Not ...
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OPTICAL LIMITING IN SEMICONDUCTORS
Applied Physics Letters, 1969The nonlinear absorption coefficients of Si from 146 to 452°K and of CdSe, CdTe, and GaAs at 300°K were measured with a Nd:YAlG Q-switched laser. The reported stepwise nature of nonlinear absorption for Si is confirmed, but the assignment of a three-photon process is uncertain.
J. M. Ralston, R. K. Chang
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Scalability of Optical Networks: Crosstalk Limitations
Photonic Network Communications, 2000Optical networks represent a promising solution for the future high capacity and flexible transport network. This paper presents a model for the performance evaluation of optical networks with respect to linear crosstalk and accumulated spontaneous emission noise.
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Photorefractive Optical Limiters
MRS Proceedings, 1994AbstractWe consider the application of photorefractive beam fanning as an optical limiter. Results indicate that by focusing the incident laser light into the photorefractive crystal and by applying electric fields that limiting is possible at the 10μJ range with an optical density or O. D. of 3.
Gregory J. Salamo +5 more
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SPIE Proceedings, 2000
Today we see that 248nm lithography is pushed to the region of very low k1-factors. The first 193nm systems are now on the market, but the technology needs still needs to mature before its optimum performance can be reached. On the other hand, development of 157nm systems has been started in order to push optical lithography to the 100nm and 70nm nodes.
Mireille Maenhoudt +4 more
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Today we see that 248nm lithography is pushed to the region of very low k1-factors. The first 193nm systems are now on the market, but the technology needs still needs to mature before its optimum performance can be reached. On the other hand, development of 157nm systems has been started in order to push optical lithography to the 100nm and 70nm nodes.
Mireille Maenhoudt +4 more
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Proceedings of the IEEE, 1981
A review is given of the characteristics and limits of integrated optics devices and circuits, with emphasis on size, speed, and power consumption. Performance limits and trade offs are discussed for semiconductor lasers, filters, switches and modulators, and bistable devices.
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A review is given of the characteristics and limits of integrated optics devices and circuits, with emphasis on size, speed, and power consumption. Performance limits and trade offs are discussed for semiconductor lasers, filters, switches and modulators, and bistable devices.
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1974 International Electron Devices Meeting (IEDM), 1974
This paper describes a new theoretical and experimental approach to understanding optical lithography. Optical absorption properties of positive photoresist are used in the determination of an exposure distribution within the resist. A development rate relationship is used to calculate developed image surface contours from the exposure distribution ...
F. H. Dill +2 more
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This paper describes a new theoretical and experimental approach to understanding optical lithography. Optical absorption properties of positive photoresist are used in the determination of an exposure distribution within the resist. A development rate relationship is used to calculate developed image surface contours from the exposure distribution ...
F. H. Dill +2 more
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Optical limiting with semiconductors
Journal of the Optical Society of America B, 1988We present a detailed characterization of the output of passive semiconductor-based optical limiters. These devices utilize two-photon absorption along with photogenerated carrier defocusing within the material to limit the output fluence and irradiance.
Vanstryland, E. W. +4 more
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Optical Aids and Their Limitations
1991What we know about the universe is gleaned mostly from our local surroundings. The detection of radiation from space is needed in order to test the universality of locally derived descriptions of the physical behavior of matter and energy. But, quite apart from any utilitarian motive, we also want to more fully comprehend the physical nature of the ...
W. Schlosser +2 more
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Optical Society of America Annual Meeting, 1990
The performance requirements of optical lithography equipment are driven by DRAM memory chips which require a 30% reduction in line width and a three-fold increase in resolution elements every generation. Until now semiconductor chips were small enough that arrays of them could be placed in the field of a lithography lens.
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The performance requirements of optical lithography equipment are driven by DRAM memory chips which require a 30% reduction in line width and a three-fold increase in resolution elements every generation. Until now semiconductor chips were small enough that arrays of them could be placed in the field of a lithography lens.
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