All-optical switching of spintronic devices
L'évolution de la mémoire des ordinateurs conduit à plusieurs niveaux des applications, potentielles mariant vitesse, densité de stockage et coût. À mesure que les limites des mémoires CMOS (Complementary Metal Oxide Semiconductor) approchent, l'intérêt pour les alternatives non volatiles telles que la mémoire magnétique à accès aléatoire (MRAM ...
openaire +1 more source
Conductance‐Dependent Photoresponse in a Dynamic SrTiO3 Memristor for Biorealistic Computing
A nanoscale SrTiO3 memristor is shown to exhibit dynamic synaptic behavior through the interaction of local electrical and global optical signals. Its photoresponse depends quantitatively on the conductance state, which evolves and decays over tunable timescales, enabling ultralow‐power, biorealistic learning mechanisms for advanced in‐memory and ...
Christoph Weilenmann +8 more
wiley +1 more source
Manipulation of ultrafast nonlinear optical response based on plasmon-induced magnetic anapole mode. [PDF]
He Y, Wang J, Yang W, Jiang S, Zhuo L.
europepmc +1 more source
Trap‐Assisted Transport and Neuromorphic Plasticity in Lead‐Free 2D Perovskites PEA2SnI4
An artificial retina built from lead‐free layered perovskite (PEA)2SnI4 converts light input into a persistent photocurrent and sums successive flashes over time. Micro/nanocrystals integrated on electrodes act as synapse‐like pixels that perform temporal integration directly in hardware. This in‐sensor preprocessing merges detection and computation on
Ofelia Durante +17 more
wiley +1 more source
Emerging 2D Ferroelectric Semiconductors: From Fundamentals to Advanced Device Applications. [PDF]
Chi M +6 more
europepmc +1 more source
Mapping Nanoscale Buckling in Atomically Thin Cr2Ge2Te6
Atomic‐resolution STEM is used to resolve nanoscale buckling in monolayer Cr2Ge2Te₆. A noise‐robust image analysis reconstructs three‐dimensional lattice distortions from single plan‐view images, revealing pronounced defect‐driven nm‐scale out‐of‐plane buckling.
Amy Carl +20 more
wiley +1 more source
Heteroaromatic π-stacking engineered near-infrared absorption for highly stable near-zero transmittance electrochromic window. [PDF]
Wu X +9 more
europepmc +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Advances of Emerging Memristors for In-Memory Computing Applications. [PDF]
Chen Q, Lu L, Meng J, Xu M, Wang T.
europepmc +1 more source
Conductive Bonding and System Architectures for High‐Performance Flexible Electronics
This review outlines bonding technologies and structural design strategies that support high‐performance flexible and stretchable electronics. Bonding approaches such as surface‐activated bonding and anisotropic conductive films, together with system‐level architectures including buffer layers and island‐bridge structures, possess distinct mechanical ...
Kazuma Nakajima, Kenjiro Fukuda
wiley +1 more source

