Results 191 to 200 of about 1,772,724 (258)
Recent advances in monolithic-integrated lead-based optoelectronic devices. [PDF]
Xu S, Luo J, Song H, Tang J.
europepmc +1 more source
The integration of reduced graphene oxide nanosheet‐hybridized molybdenum disulfide bilayers to enhance hydrogen evolution reaction capabilities unveils thrilling opportunities for strain engineering, defect manipulation, and sophisticated twist‐angle assemblies with 2D heterostructures.
Bruno Ferreira Brischi +8 more
wiley +1 more source
Optoelectronic Devices for In-Sensor Computing. [PDF]
Ren Q +7 more
europepmc +1 more source
Planar bilayer heterojunctions are fabricated from two molecular materials and compared to solution‐processed bulk heterojunctions. Raman spectroscopy and conductive AFM studies reveal the formation of conductive pillar‐like structures within a poorly conductive matrix.
Agostino Attinà +6 more
wiley +1 more source
Visualization of Light-Impinging Geometry in Nonlinear Photocurrents of Vertical Optoelectronic Devices. [PDF]
Koc H, Chen J, Gu D, Eginligil M.
europepmc +1 more source
Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley +1 more source
Insilico investigations of the physical properties of hexagonal chalcogenide perovskites CsXS<sub>3</sub> (X = Nb, V) for UV optoelectronic devices and photovoltaic applications. [PDF]
Balogun RO +4 more
europepmc +1 more source
ABSTRACT We investigate the band alignment of a monocrystalline grafted p‐type Si/Ge0.89Sn0.11 heterostructure using X‐ray photoelectron spectroscopy (XPS). The bandgap of the Ge0.89Sn0.11 epilayer of 0.50 eV was first determined and cross‐verified using photoluminescence spectroscopy, infrared transmission, and theoretical calculation.
Yang Liu +11 more
wiley +1 more source
DFT-based exploration of pressure effects on the physical properties of Zinc-blende materials XM (X = Ga, In; M = As, N) for optoelectronic devices. [PDF]
Sabah M +6 more
europepmc +1 more source
A pixelated full‐color display is driven by a 1064 nm near‐infrared laser without electrical wiring. A graphite photothermal layer converts light into heat, while an aluminum heat‐spreading layer redistributes it for uniform color within each pixel. Optimizing pixel size and spacing suppresses thermal crosstalk, enabling non‐contact reproduction of ...
Sang‐Mi Jeong +4 more
wiley +1 more source

