Results 191 to 200 of about 1,772,724 (258)

Molybdenum Disulfide Bilayers Hybridized With Reduced Graphene Oxide Nanosheets for Enhanced Hydrogen Evolution Reaction

open access: yesAdvanced Materials Interfaces, EarlyView.
The integration of reduced graphene oxide nanosheet‐hybridized molybdenum disulfide bilayers to enhance hydrogen evolution reaction capabilities unveils thrilling opportunities for strain engineering, defect manipulation, and sophisticated twist‐angle assemblies with 2D heterostructures.
Bruno Ferreira Brischi   +8 more
wiley   +1 more source

Optoelectronic Devices for In-Sensor Computing. [PDF]

open access: yesAdv Mater
Ren Q   +7 more
europepmc   +1 more source

Probing the Architecture of Organic Heterojunctions Based on Zn(Salen)‐Type/Lu(Bis‐phthalocyanine) Complexes and Their Potential Application as Gas Sensors

open access: yesAdvanced Materials Interfaces, EarlyView.
Planar bilayer heterojunctions are fabricated from two molecular materials and compared to solution‐processed bulk heterojunctions. Raman spectroscopy and conductive AFM studies reveal the formation of conductive pillar‐like structures within a poorly conductive matrix.
Agostino Attinà   +6 more
wiley   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

open access: yesAdvanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

Band Alignment of Grafted Si/Ge0.89Sn0.11 Heterojunction Determined by X‐Ray Photoelectron Spectroscopy

open access: yesAdvanced Materials Interfaces, EarlyView.
ABSTRACT We investigate the band alignment of a monocrystalline grafted p‐type Si/Ge0.89Sn0.11 heterostructure using X‐ray photoelectron spectroscopy (XPS). The bandgap of the Ge0.89Sn0.11 epilayer of 0.50 eV was first determined and cross‐verified using photoluminescence spectroscopy, infrared transmission, and theoretical calculation.
Yang Liu   +11 more
wiley   +1 more source

Photothermal Heat Spreading for Uniform Pixel Activation in NIR Laser‐Driven Thermochromic Liquid Crystal Displays

open access: yesAdvanced Materials Interfaces, EarlyView.
A pixelated full‐color display is driven by a 1064 nm near‐infrared laser without electrical wiring. A graphite photothermal layer converts light into heat, while an aluminum heat‐spreading layer redistributes it for uniform color within each pixel. Optimizing pixel size and spacing suppresses thermal crosstalk, enabling non‐contact reproduction of ...
Sang‐Mi Jeong   +4 more
wiley   +1 more source

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