Results 211 to 220 of about 133,833 (295)

Laponite-Modified Biopolymers as a Conformable Substrate for Optoelectronic Devices. [PDF]

ACS Omega
Onishi BSD, Carvalho RS, Bortoletto-Santos R, Santagneli SH, Barreto ARJ, Santos AM, Cremona M, Pandoli OG, Junior MNB, Faraco TA, Barud HS, de Farias RL, Ribeiro SJL, Legnani C.   +13 more
europepmc   +1 more source

Linking Device Performance to Nanoscale Photoactivation of Grain Boundaries in 2D Hybrid Halide Perovskites

Advanced Materials Technologies, EarlyView.
The opto‐electronic response of polycrystalline (PEA)2PbBr4 thin films is investigated by correlating macroscopic photodetector performance with nanoscale mapping techniques. Grain boundary density is systematically tuned through crystallization control and linked to device responsivity.
Camilla Bordoni, Lorenzo Calcaterra, Andrea Ciavatti, Silvia Milita, Valentina Bonino, Lorenzo Margotti, Sara Cepić, Marisa Di Sabatino, Federico Boscherini, Daniela Cavalcoli, Beatrice Fraboni   +10 more
wiley   +1 more source

Recent Advances in Perovskite Single-Crystal Thin Film Optoelectronic Devices. [PDF]

ACS Omega
Simbula A, Demontis V, Quochi F, Bongiovanni G, Marongiu D.   +4 more
europepmc   +1 more source

Controlling Film Formation in Inkjet‐printed MAPbBr3 Through Graphene Incorporation for Enhanced Photodetection

Advanced Materials Technologies, EarlyView.
This work highlights the impact of incorporating graphene nanoflakes into precursor inks of MAPbBr3 for inkjet‐printed optoelectronic device applications. A substantial modification of the crystallization dynamics is reported despite miniscule concentrations.
Kenneth Lobo, Javier Bartolomé, María Vila, Giovanni Vescio, Raúl I. Sánchez‐Alarcón, Junaid Khan, Júlia Marí Guaita, Francisco Palacio Bonet, Juan P. Martínez‐Pastor, Sergi Hernández, Blas Garrido, Carmen Coya, Albert Cirera   +12 more
wiley   +1 more source

Highly accurate, efficient, and fabrication tolerance-aware nanostructure prediction for high-performance optoelectronic devices. [PDF]

Sci Rep
Jeong WK, Kim KH, Park C, Song DG, Song M, Seo MH.   +5 more
europepmc   +1 more source

Low‐Temperature Processed Optoelectronic Synapses With Enhanced Responsivity for Edge‐Oriented In‐Sensor Reservoir Computing

Advanced Materials Technologies, EarlyView.
Image pixels are converted into optical pulse sequences to stimulate the optoelectronic synaptic device, generating dynamic responses that form high‐dimensional features. These features improve classification efficiency and demonstrate strong potential for neuromorphic edge computing systems.
Jo‐Lin Chen, Shi‐Qian Guo, Yu‐Chuan Chiu, Po‐Tsun Liu   +3 more
wiley   +1 more source

Polypyrrole-bismuth tungstate/polypyrrole core-shell for optoelectronic devices exhibiting Schottky photodiode behavior. [PDF]

Sci Rep
Trabelsi ABG, Rabia M, Alkallas FH, Kusmartsev FV.   +3 more
europepmc   +1 more source

Decoupling the Impact of Deep‐Trap and Band‐Tail States on PbS Quantum Dot Photodetectors via Alkylamine Engineering

Advanced Materials Technologies, EarlyView.
Band‐tail and deep trap states are effectively disentangled through the use of selective alkylamine additives. PA‐driven 2D ordering narrows band tails, while HA enhances halide passivation and Pb coordination to suppress deep traps. A comparative study of their CQD short‐wave infrared (SWIR) photodetectors further reveals whether band‐tail states or ...
Huaying Zhong, Fan Fang, Jasper Guido Ebel, Qian Chen, Lixin Li, Kaiyu Luo, Yihan Song, Andong Zhong, Haibo Zhu, Xiao Wang, Kaijie Ling, Yong Xia, Haodong Tang, Wei Chen, Peter Müller‐Buschbaum   +14 more
wiley   +1 more source

Research Progress and Future Perspectives on Photonic and Optoelectronic Devices Based on p-Type Boron-Doped Diamond/n-Type Titanium Dioxide Heterojunctions: A Mini Review. [PDF]

Nanomaterials (Basel)
Ge S, Sang D, Li C, Shi Y, Wang Q, Xiao D.   +5 more
europepmc   +1 more source

Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting

Advanced Optical Materials, EarlyView.
Semiconductor Grafting enables a lattice‐mismatched GaAs/GeSn‐MQW/Ge heterojunction with engineered band offsets and optical field distribution. The enlarged conduction and valence band discontinuities govern asymmetric carrier transport, producing bias‐dependent dual‐mode photodetection from visible to near‐infrared wavelengths.
Jie Zhou, Haibo Wang, Yang Liu, Yifu Guo, Alireza Abrand, Yiran Li, Jiarui Gong, Hieu D. Trinh, Po Rei Huang, Jianping Shen, Shengqiang Xu, Daniel Vincent, Samuel Haessly, Yi Lu, Munho Kim, Shui‐Qing Yu, Parsian K. Mohseni, Guo‐En Chang, Zetian Mi, Kai Sun, Xiao Gong, Mikhail A. Kats, Zhenqiang Ma   +22 more
wiley   +1 more source