Results 111 to 120 of about 2,913 (243)

Electronic neuroprocessors [PDF]

The JPL Center for Space Microelectronics Technology (CSMT) is actively pursuing research in the neural network theory, algorithms, and electronics as well as optoelectronic neural net hardware implementations, to explore the strengths and application ...
Thakoor, Anil
core   +1 more source

Novel applications possibilities for phase-change materials and devices [PDF]

, 2016
Paper presented at European\Phase Change and Ovonics Symposium 2013, 2013-09-08, 2013-09-10, BerlinPhase-change materials and devices are most widely known for their use in optical and electrical non-volatile memory applications.
Au, YY, Aziz, Mustafa M., Bhaskaran, Harish, Cobley, Rosie, Hosseini, Peiman, Pernice, Wolfram H.P., Rodriguez-Hernandez, G, Wang, L, Wright, C. David   +8 more
core  

Molecular Sieve Promoted Growth of Ferroelectric Trilayer 3R‐MoS2 for Polarization‐Dependent Reconfigurable Optoelectronic Synapses

Advanced Science, EarlyView.
The noncentrosymmetric trilayer rhombohedral‐stacked MoS2 nanoflakes with enhanced sliding ferroelectric properties are synthesized via a molecular sieve‐assisted chemical vapor deposition process. The switchable polarization states, combined with the exceptional light/gate voltage modulated electrical properties of these nanoflakes, enable broadband ...
Qichao Xue, Jincheng Zhang, Yuying Wang, Yu Wang, Kuiwei Li, Yuxuan Chen, Fang Zhong, Qing Li, Ning Zhou, Chenying Yang, Yuchuan Shao, Tao Liang   +11 more
wiley   +1 more source

Artificial visual‐tactile perception array for enhanced memory and neuromorphic computations

InfoMat
The emulation of human multisensory functions to construct artificial perception systems is an intriguing challenge for developing humanoid robotics and cross‐modal human–machine interfaces.
Jiaqi He, Ruilai Wei, Shuaipeng Ge, Wenqiang Wu, Jianchao Guo, Juan Tao, Ru Wang, Chunfeng Wang, Caofeng Pan   +8 more
doaj   +1 more source

Flexible Artificial Optoelectronic Synapse based on Lead-Free Metal Halide Nanocrystals for Neuromorphic Computing and Color Recognition. [PDF]

Adv Sci (Weinh), 2022
Li Y, Wang J, Yang Q, Shen G.
europepmc   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

Advanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian   +4 more
wiley   +1 more source

Optical Charge Trap Memory Based on Graphene/ZnO Heterostructures for Long‐Term Retention and Adaptive Learning

Advanced Electronic Materials, EarlyView.
A biocompatible graphene/ZnO optical charge trap memory (CTM) is reported with over 54 h retention, enabled by interfacial photodoping. Using transient absorption spectroscopy and electrical analysis, charge transfer quenching is elucidated and reveal that a large energy barrier at the interface is responsible for long‐term memory retention.
Seungmin Shin, Junhyung Kim, Hyungdoh Lee, Yixuan Dou, Jacob T. Heiden, Seung Eun Lee, Jinwoo Song, Lina Quan, Giulia Tagliabue, Min Seok Jang, Himchan Cho   +10 more
wiley   +1 more source

Tailoring Dynamic Synaptic Plasticity in FeTFT Optoelectronic Synapse for Associative Learning

Advanced Electronic Materials
Neuromorphic hardware with dynamic synaptic plasticity presents fascinating applications in advanced artificial intelligence. However, the development of low‐cost, CMOS (Complementary Metal‐Oxide‐Semiconductor)‐compatible, and dynamically tunable ...
Peng Yang, Hui Xu, Xiaopeng Luo, Shihao Yu, Yang Liu, Yefan Zhang, Xu Guo, Bing Song, Zhiwei Li, Sen Liu, Qingjiang Li   +10 more
doaj   +1 more source

Recent Progress in Optoelectronic Artificial Synapse Devices

Journal of Inorganic Materials, 2023
Chen GE, Jianyu DU
openaire   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong, Taejun Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
wiley   +1 more source