Results 201 to 210 of about 148,732 (323)

Correction: Nickel-cobalt hydroxide: a positive electrode for supercapacitor applications. [PDF]

open access: yesRSC Adv
Vidhya MS   +6 more
europepmc   +1 more source

Magnetic‐Field Tuning of the Spin Dynamics in the Quasi‐2D Van der Waals Antiferromagnet CuCrP2S6

open access: yesAdvanced Functional Materials, EarlyView.
This study reveals 2D character of the spin dynamics in CuCrP2S6, as well as complex field dependence of collective excitations in the antiferromagnetically ordered state. Their remarkable tuning from the antiferromagnetic to the ferromagnetic type with magnetic field, together with the non‐degeneracy of the magnon gaps favorable for the induction of ...
Joyal John Abraham   +16 more
wiley   +1 more source

One-dimensional photonic crystal structure enhanced external-magnetic-field-free spintronic terahertz high-field emitter. [PDF]

open access: yesSci Technol Adv Mater
Yang Z   +8 more
europepmc   +1 more source

All‐Inorganic InP/ZnSe/ZnS Quantum Dots with Chalcogenidometallate Ligands for Biosolar Catalysis

open access: yesAdvanced Functional Materials, EarlyView.
Intrinsic charge transfer limitations in core/shell QDs are addressed through a ligand‐induced band offset engineering (LBOE) strategy utilizing metal chalcogenide complex (MCC) ligands. The MCC‐functionalized InP/ZnSe/ZnS QDs exhibited remarkably augmented hydrogen peroxide (H2O2) generation.
Jaehwan Lee   +10 more
wiley   +1 more source

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang   +6 more
wiley   +1 more source

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