Results 201 to 210 of about 156,761 (319)
Intermixing‐Driven Growth of Highly Oriented Indium Phosphide on Black Phosphorus
This study demonstrates controlled intermixing and compound formation at the In/black phosphorus (BP) interface, leading to highly oriented InP formation. Comprehensive structural and electrical analyses reveal tunable bandgap behavior governed by competing BP thinning and charge‐transfer effects, underscoring the critical role of interfacial compound ...
Tae Keun Yun +6 more
wiley +1 more source
Quantum Dot Materials and Optoelectronic Devices. [PDF]
Zhang Y, Wu G.
europepmc +1 more source
Circular photogalvanic effect measurements and first‐principles calculations reveal spin‐splitting states in solution‐processed bournonite films (CuPbSbS3) due to structural and bulk inversion asymmetry. The results provide experimental confirmation of coexisting Rashba and Dresselhaus spin‐splitting states in this non‐centrosymmetric chalcogenide ...
Aeron McConnell +5 more
wiley +1 more source
Graphene-, Transition Metal Dichalcogenide-, and MXenes Material-Based Flexible Optoelectronic Devices. [PDF]
Wang Y, Zhou G, Zhang Z, Zhu Z.
europepmc +1 more source
Enhanced Optoelectronic Properties of Zn-Doped SnO2 Thin Films Prepared by Nebulizer Spray Method
Şerif Rüzgar
openalex +2 more sources
Electron–Matter Interactions During Electron Beam Nanopatterning
This article reviews the electron–matter interactions important to nanopatterning with electron beam lithography (EBL). Electron–matter interactions, including secondary electron generation routes, polymer radiolysis, and electron beam induced charging, are discussed.
Camila Faccini de Lima +2 more
wiley +1 more source
Realization of a Dirac-vortex topological photonic crystal fiber. [PDF]
Niu Q +12 more
europepmc +1 more source
Direct observations of defect structures in optoelectronic materials by Z-contrast STEM
B. Beaumont +10 more
openalex +1 more source

