Results 201 to 210 of about 260,261 (363)

Very high speed differential optoelectronic algorithmic ADC using n–i(MQW)–n SEED technology [PDF]

, 2000
Said F. Al-Sarawi, Neil Burgess, W. Marwood, Petar Atanackovic, Derek Abbott   +4 more
openalex   +1 more source

Single Pair of Weyl Points Evolve From Spin Group‐Protected Nodal Line in Half‐Metallic Ferromagnet V3S4

Advanced Functional Materials, EarlyView.
A spin group (SG)‐based mechanism is proposed to realize a single pair of Weyl points. PT‐symmetric nodal lines (NLs) persist under T‐breaking, protected by the combination of SG and P symmetry. When considering spin‐orbit coupling, the SG‐protected NL will split into Weyl points, which will also induce anomalous transport phenomena arising from ...
Shifeng Qian, Yao Zhang, Xiaowei Sheng, Xiuxian Yang, Gang Zhang, Junfeng Gao, Xiaotian Wang   +6 more
wiley   +1 more source

Intervalence band absorption in InP and related materials for optoelectronic device modeling [PDF]

, 2000
Jason Taylor, Valery Tolstikhin
openalex   +1 more source

Ultrafast Room‐Temperature Nanofabrication via Ozone‐Based Gas‐Phase Metal‐Assisted Chemical Etching for High‐Performance Silicon Photodetectors

Advanced Functional Materials, EarlyView.
Ozone‐based gas‐phase metal‐assisted chemical etching enables unprecedented room‐temperature fabrication of high‐quality silicon nanowires. The superior oxidation potential of O3 drives rapid vertical etching (1 µm min−1) while maintaining exceptional structural integrity. The pristine nanowire surfaces enable high‐performance core‐shell photodetectors
Hyein Cho, Yejin Han, Geonhwi Kim, Jihwan Jeong, Seongmin Lee, Yebin Ahn, Sang Beom Hong, Soohyeok Park, Inkyeong Park, So Eun Jang, Duck Hyun Youn, Han‐Don Um   +11 more
wiley   +1 more source

Optoelectronic RF signal mixing using an electroabsorption waveguide as an integrated photodetector/mixer [PDF]

, 2000
Dong‐Soo Shin, G.L. Li, Chi‐Kuang Sun, S.A. Pappert, K.K. Loi, W. S. C. Chang, Paul K. L. Yu   +6 more
openalex   +1 more source

Supercompliant Lattice Boosts n‐type AgSbTe2 Thermoelectrics

Advanced Functional Materials, EarlyView.
The supercompliant lattice design enables the first realization of n‐type electrical transport in AgSbTe2 by overcoming intrinsic electron‐killer defects and exceeding the doping limits imposed by the conventional Hume–Rothery rule. Accordingly, the best performance n‐type Ag0.8Na0.3Sb0.6Bi0.4Te2 sample achieves a low κ of 0.27 W·m−1·K−1 that ...
Ruoyan Li, Shuai Han, Chunyu Zhang, Suyao Liu, Wen Yin, Yuanguang Xia, Pengfei Liu, Zhen‐Hua Ge, Dongyao Zhao, Bingchao Yang, Lulu Huang, Zhi Zhang, Yongsheng Zhang, Yuan Yu, Bangzhi Ge, Chongjian Zhou   +15 more
wiley   +1 more source

Developments and trends in optoelectronic industry.

, 1991
Takuzo Sato
openalex   +2 more sources

Optoelectronic Multi-Chip Modules Based on Imaging Fiber Bundle Structures [PDF]

, 2000
Donald M. Chiarulli, Steven P. Levitan
openalex   +1 more source

Optical Control of Ferroelectric Imprint in BiFeO3

Advanced Functional Materials, EarlyView.
Above‐bandgap irradiation at room temperature enables on‐demand optical control of defect‐driven built‐in electric fields in BiFeO₃ thin films, fabricated via scalable, chemical spray pyrolysis. These fields, otherwise “frozen‐in,” can cause severe device degradation, including non‐switchable polarization, dead layers near interfaces, and polarization ...
Haoze Zhang, Malur C. Nagashree, Richard F. Webster, Zhipeng Wang, Xiaoran Zheng, Suresh D. Kulkarni, Rajendra B. Venkataramana, Jan Seidel, Pankaj Sharma   +8 more
wiley   +1 more source

Noise measurement of optoelectronic coupled devices for reliability screening: Is there an optimal threshold? [PDF]

, 2000
Jiansheng Xu
openalex   +1 more source