Results 141 to 150 of about 50,527 (346)

Decoding THz‐Driven Dynamic Fingerprints of Ferroelectric Nanotwin Networks

Advanced Materials, EarlyView.
ABSTRACT Ultrafast polarization dynamics in ferroelectrics are of considerable interest for high‐speed tunable dielectrics and electro‐optics. Extended domain wall networks formed in ferroelectric twin nanodomains can support collective dynamics in the terahertz regime but require techniques that track polarization and strain evolution driven by ...
Xiaojiang Li, Aiden Ross, Vladimir A. Stoica, Sujit Das, Sankalpa Hazra, Huaiyu (Hugo) Wang, Hari Padma, Matthias C. Hoffmann, Patrick Kramer, Sanghoon Song, Silke Nelson, Takahiro Sato, Diling Zhu, Ramamoorthy Ramesh, Lane W. Martin, Yue Cao, John W. Freeland, Aaron M. Lindenberg, Haidan Wen, Long‐Qing Chen, Venkatraman Gopalan   +20 more
wiley   +1 more source

Syntheses of dibenzo[d,d']benzo[2,1-b:3,4-b']difuran derivatives and their application to organic field-effect transistors [PDF]

, 2016
Minh Anh Truong, Koji Nakano
openalex   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Label-Free Direct Electrical Detection of a Histidine-Rich Protein with Sub-Femtomolar Sensitivity using an Organic Field-Effect Transistor. [PDF]

ChemistryOpen, 2017
Minamiki T, Sasaki Y, Tokito S, Minami T.   +3 more
europepmc   +2 more sources

Backbone Engineering of Carbon‐Centered NHC‐Derived Diradicals: From Electronic State Tuning to High‐Performance Organic Field‐Effect Transistors

Advanced Materials, EarlyView.
The open‐shell nature of diradicals facilitates charge separation, and compounds with moderate diradical character demonstrate remarkable potential in organic field‐effect transistors (OFET) applications due to their low reorganization energies for hole and electron transport.
Xiao‐Xu Liu, Lianghui Li, Xin Li, Can Chen, Man Li, Shun Tian, Paul J. Dyson, Ying‐Feng Han   +7 more
wiley   +1 more source

Organic heterostructure approach for multifunctional light-emitting field-effect transistors

, 2011
Gianluca Generali
openalex   +1 more source

Organic Field-Effect Transistors Based on a Liquid-Crystalline Polymeric Semiconductor using SU-8 Gate Dielectrics onFlexible Substrates [PDF]

, 2014
Kornelius Tetzner, Indranil Bose, Karlheinz Bock   +2 more
openalex   +1 more source

Bioelectrical Interfaces Beyond Excitable Cells: Cancer, Aging, and Gene Expression Modulation

Advanced Materials Interfaces, EarlyView.
ABSTRACT The investigation of biological conductivity has evolved from its classical foundation based on ionic fluxes underpinning cardiac and neuronal excitability to a multifaceted regulator of cellular physiology. Traditional approaches for probing electrical events in living matter focused largely on action potentials recording.
Paolo Cadinu, Matthew K. Burgess, Catarina Franco Jones, Marzia Iarossi, Manuel Schröter, Nako Nakatsuka, Mustafa B. A. Djamgoz, Gil Gonçalves, Sidahmed Abayzeed, Paola Sanjuán‐Alberte, Paula M. Mendes, Frankie J. Rawson, Malavika Nair, Michael Levin, Rosalia Moreddu   +14 more
wiley   +1 more source

Injection-modulated polarity conversion by charge carrier density control via a self-assembled monolayer for all-solution-processed organic field-effect transistors [PDF]

, 2017
Jeongkyun Roh, Taesoo Lee, Chan‐mo Kang, Jeonghun Kwak, Philippe Lang, Gilles Horowitz, Hyeok Kim, Changhee Lee   +7 more
openalex   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source