Results 91 to 100 of about 17,076,093 (251)

Recent advancements in implantable neural links based on organic synaptic transistors

Exploration
The progress of brain synaptic devices has witnessed an era of rapid and explosive growth. Because of their integrated storage, excellent plasticity and parallel computing, and system information processing abilities, various field effect transistors ...
Swarup Biswas, Hyo‐won Jang, Yongju Lee, Hyojeong Choi, Yoon Kim, Hyeok Kim, Yangzhi Zhu   +6 more
doaj   +1 more source

Understanding Quasi-Static and Dynamic Characteristics of Organic Ferroelectric Field Effect Transistors

Micromachines
Leveraging poly(vinylidene fluoride-trifluoroethylene) [(PVDF-TrFE)] as the dielectric, we fabricated organic ferroelectric field-effect transistors (OFe-FETs).
Hanjing Ke, Xiaoci Liang, Xiaozhe Yin, Baiquan Liu, Songjia Han, Shijie Jiang, Chuan Liu, Xiaojian She   +7 more
doaj   +1 more source

Ion Sensitive Organic Field Effect Transistors [PDF]

, 2011
Ion sensitive organic field-effect transistors (ISOFETs) with a metal–oxide–semiconductor field-effect transistor (MOSFET) architecture have been fabricated by using poly(3-hexylthiophene) (P3HT) and poly(methyl methacrylate) (PMMA) as the semiconductor ...
RITJAREONWATTU, SUPACHAI
core  

Structured-gate organic field-effect transistors

, 2012
We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars.
Pandey, Ajay K, Aljada, Muhsen, Velusamy, Marappan, Burn, Paul L., Namdas, Ebinazar B., Namdas, Ebinazar B, Pandey, Ajay K., Paul Meredith, Meredith, Paul, Burn, Paul L   +9 more
core   +1 more source

Monolithic 3D‐Integrated All‐Solid Ion‐Gated Carbon Nanotube Transistors With Tunable Ionic Conductance for Multi‐Timescale Reservoir Computing

Advanced Materials, EarlyView.
A dual‐timescale reservoir based on monolithically 3D (M3D)‐integrated CNT solid ion‐gated transistors is demonstrated. Tunable ionic dynamics and pulse‐engineered operation enable linear and symmetric synaptic updates. The M3D‐integrated array achieves robust temporal encoding and accurate classification of moving MNIST sequences, highlighting its ...
Haksoon Jung, Hanbin Cho, Yongwoo Lee, Seunghun Baek, Hyeongjun Kim, Yun Goo Ro, Hyunhyub Ko, Joonki Suh, Yong‐Young Noh, Jimin Kwon   +9 more
wiley   +1 more source

Vertical polyelectrolyte-gated organic field-effect transistors [PDF]

, 2010
Short-channel, vertically structured organic transistors with a polyelectrolyte as gate insulator are demonstrated. The devices are fabricated using low-resolution, self-aligned, and mask-free photolithography.
Berggren, Magnus,, Sawatdee, A,, Berggren, M, Engquist, Isak, Sandberg, Mats,, X. Crispin, Herlogsson, Lars, Sandberg, M,, Liu, Jiang, A. Sawatdee, Berggren, Magnus, Favia, P,, Crispin, Xavier, Sawadtee, A, Liu, Jiang,, Herlogsson, Lars,, I. Engquist, L. Herlogsson, Sawadtee, A,, P. Favia, Liu, J, Sandberg, M, Favia, P, M. Sandberg, Engquist, Isak,, M. Berggren, Crispin, X, Engquist, I, Crispin, Xavier,   +28 more
core   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Resolving the High‐k Paradox in Organic Field‐Effect Transistors Through Rational Dielectric Design

Advanced Electronic Materials
Dielectric materials with high relative permittivity, i.e., high‐k dielectrics, are in great demand for application as gate dielectric for the development of field‐effect transistors operating at low voltages.
Beomjin Jeong, Kamal Asadi
doaj   +1 more source

CVD Grown Hybrid MoSe2–WSe2 Lateral/Vertical Heterostructures With Strong Interlayer Exciton Emission

Advanced Materials, EarlyView.
A scalable bottom‐up CVD methodology, based on liquid transition metal salt precursors, is presented for the controlled growth of two high‐quality MoSe2–WSe2 heterostructures (HSs): purely lateral (HS I) and hybrid lateral/vertical (HS II), by simply adjusting precursor concentration.
Md Tarik Hossain, Sai Shradha, Axel Printschler, Julian Picker, Luc F. Oswald, Julian Führer, Nicole Engel, Honey Jayeshkumar Shah, Christof Neumann, Daria I. Markina, Moritz Quincke, Johannes Biskupek, Kenji Watanabe, Takashi Taniguchi, Ute Kaiser, Bernhard Urbaszek, Andrey Turchanin   +16 more
wiley   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source