Results 111 to 120 of about 17,076,093 (251)

Probing the Architecture of Organic Heterojunctions Based on Zn(Salen)‐Type/Lu(Bis‐phthalocyanine) Complexes and Their Potential Application as Gas Sensors

Advanced Materials Interfaces, EarlyView.
Planar bilayer heterojunctions are fabricated from two molecular materials and compared to solution‐processed bulk heterojunctions. Raman spectroscopy and conductive AFM studies reveal the formation of conductive pillar‐like structures within a poorly conductive matrix.
Agostino Attinà, Petr Bečvár, Martin Hruska, Rita Meunier‐Prest, Eric Lesniewska, Santo Di Bella, Marcel Bouvet   +6 more
wiley   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

Electrical characteristics of top-down ZnO nanowire transistors using remote plasma ALD

Top-down fabrication is used to produce ZnO nanowires by remote plasma atomic layer deposition over a SiO2 pillar and anisotropic dry etching. Nanowire field-effect transistors (FETs), with channel lengths in the range of 1.3–18.6 µm, are then fabricated
Masaud, T.B., Ashburn, P., Fang, Q., Gunn, R., Allen, M. W., Partridge, J., Clark, O.D., Sultan, S.M., Sun, K., Chong, H.M.H.   +9 more
core   +1 more source

Advances in Halide Perovskites for Photon Radiation Detectors

Advanced Materials Technologies, EarlyView.
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang, Jieqi Wang, Xiaojun Cui, Carsten Ronning   +3 more
wiley   +1 more source

Soluble derivatives of perylene and naphthalene diimide for n-channel organic field-effect transistors

, 2006
Solution-processed n-type organic field-effect transistors (OFETs) have been fabricated using soluble derivatives of perylene diimide and naphthalene diimide.
Icli, S., Turkmen, G., Guenes, Serap, Kuban, B., Singh, Th. B., Erten, S., Zafer, C., Sariciftci, N. S., Teoman, Y., Guenes, S.   +9 more
core   +1 more source

Recent Advances of Slip Sensors for Smart Robotics

Advanced Materials Technologies, EarlyView.
This review summarizes recent progress in robotic slip sensors across mechanical, electrical, thermal, optical, magnetic, and acoustic mechanisms, offering a comprehensive reference for the selection of slip sensors in robotic applications. In addition, current challenges and emerging trends are identified to advance the development of robust, adaptive,
Xingyu Zhang, Liao Wu, Shuai He, Zhao Sha, Yuwan Huang, Shuying Wu, Dewei Chu, Chun H. Wang, Shuhua Peng   +8 more
wiley   +1 more source

Low Contact Resistance Organic Single‐Crystal Transistors with Band‐Like Transport Based on 2,6‐Bis‐Phenylethynyl‐Anthracene

Advanced Science
Contact resistance has become one of the main bottlenecks that hinder further improvement of mobility and integration density of organic field‐effect transistors (OFETs).
Yanan Sun, Xiaosong Shi, Yamin Yu, Zhilei Zhang, Miao Wu, Limei Rao, Yicai Dong, Jing Zhang, Ye Zou, Shengyong You, Jie Liu, Ming Lei, Chuan Liu, Lang Jiang   +13 more
doaj   +1 more source

Monte Carlo simulation of silicon-germanium transistors [PDF]

, 2002
Self-consistent Monte Carlo simulation studies of n-channel Si/SiGe modulation doped field effect transistors (MODFETs) and silicon-on-insulator lateral bipolar junction transistors (SOI- LBJTs) are reported in this thesis. As a preliminary to the device
Yangthiasong, Anucha, Yangthaisong, Anucha   +1 more
core  

Bimolecular recombination in ambipolar organic field effect transistors

, 2009
In ambipolar organic field effect transistors (OFET) the shape of the channel potential is intimately related to the recombination zone width W, and hence to the electron-hole recombination strength.
Charrier, D. S. H.,, Mathijssen, SGJ Simon, Smits, E.C.P., Geluk, E.J., Geluk, EJ, Mathijssen, S.G.J., Janssen, R. A. J.,, Vries, T. de, Geluk, E. -J., Vries, de, T., Geluk, E. -J.,, Kemerink, M., Charrier, D.S.H., Smits, Edsger CP, Geluk, E.-J., Vries, T de, Kemerink, M Martijn, de Vries, T.,, de Vries, T., Mathijssen, S. G. J.,, Janssen, RAJ René, Smits, E. C. P., Janssen, R.A.J.; id_orcid, Kemerink, M.,, Janssen, R. A. J., Mathijssen, S. G. J., Smits, E. C. P.,, Charrier, DSH Dimitri, Charrier, D. S. H., Janssen, R.A.J.   +29 more
core   +1 more source

Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics

Advanced Materials Technologies, EarlyView.
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald, Ali Nawaz, Amandeep Singh, Prashant Sonar   +3 more
wiley   +1 more source