Results 61 to 70 of about 44,654 (295)

Influence of Substrate Modification with Dipole Monolayers on the Electrical Characteristics of Short-Channel Polymer Field-Effect Transistors

open access: yesApplied Sciences, 2018
This study investigates the influence of self-assembled monolayer treatment of gate insulators on the electrical characteristics of bottom-gate/bottom-contact organic field-effect transistors (OFETs) with short channel lengths of 5 μm to 30 nm.
Takashi Nagase   +5 more
doaj   +1 more source

Phase Transition Field Effect Transistor Observed in an α-(BEDT-TTF)2I3 Single Crystal

open access: yesSolids, 2023
The metal–insulator transition induced by the gate electric field in the charge order phase of the α-(BEDT-TTF)2I3 single-crystal field-effect transistor (FET) structure was clearly observed near the phase transition temperature.
Ryosuke Ando   +4 more
doaj   +1 more source

High-performance field effect transistors with self-assembled nanodielectrics [PDF]

open access: yes, 2009
Field effect transistor devices comprising III-V semiconductors and organic gate dielectric materials, such dielectric materials as can afford flexibility in device design and ...
Facchetti, Antonio   +4 more
core   +1 more source

Low-voltage organic transistors and inverters with ultra-thin fluoropolymer gate dielectric

open access: yes, 2009
We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages
Batlogg, B.   +3 more
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Doped organic field-effect transistors

open access: yesMaterial Science & Engineering International Journal, 2018
Organic semiconductors and electronic devices based on these materials continue attracting great interest due to their excellent and unique optoelectronic properties as well as the advantageous possibilities of realizing flexible, light-weight, low-cost, and transparent optoelectronic devices fabricated on ultra-thin and solution-processible active ...
Gunel Huseynova, Vladislav Kostianovskii
openaire   +1 more source

Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator

open access: yes, 2003
A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's.
H. Akoh   +6 more
core   +1 more source

High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors [PDF]

open access: yes, 2011
© 2011 National Institute for Materials ScienceSolution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc6) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in
Cain, MG   +7 more
core   +1 more source

Bio‐Inspired Molecular Events in Poly(Ionic Liquids)

open access: yesAdvanced Functional Materials, EarlyView.
Originating from dipolar and polar inter‐ and intra‐chain interactions of the building blocks, the topologies and morphologies of poly(ionic liquids) (PIL) govern their nano‐ and micro‐processibility. Modulating the interactions of cation‐anion pairs with aliphatic dipolar components enables the tunability of properties, facilitated by “bottom‐up ...
Jiahui Liu, Marek W. Urban
wiley   +1 more source

Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI3 Perovskite Nanorods Bilayer Structure

open access: yesNano-Micro Letters, 2018
The outstanding performances of nanostructured all-inorganic CsPbX3 (X = I, Br, Cl) perovskites in optoelectronic applications can be attributed to their unique combination of a suitable bandgap, high absorption coefficient, and long carrier lifetime ...
Yantao Chen   +5 more
doaj   +1 more source

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