Results 191 to 200 of about 17,930,464 (282)

A Bio‐Inspired Visual Sensor With UV‐to‐NIR Fusion for Enhanced Recognition in Autonomous Driving Systems

open access: yesAdvanced Science, EarlyView.
Inspired by the sophisticated multilayer retinal architecture found in Pacific salmon eyes, a novel van der Waals heterojunction sensor based on NbNiTe5/BP is designed. Upon illumination at distinct wavelengths of 365 and 820 nm, the device exhibits distinctive bipolar photocurrent responses with opposite polarities. This unique optoelectronic behavior
Tianle Zeng   +18 more
wiley   +1 more source

Functional MXene Inks for Printed Electronics: Chemistry, Rheology, and Devices

open access: yesAdvanced Science, EarlyView.
Functional MXene inks are emerging as building blocks for MXetronics, connecting MXene synthesis, surface functionalization, ink formulation, and advanced printing with device‐level applications. This review maps how composition, stability, rheology, and processability govern printed structures and enable high‐performance sensors, energy‐storage ...
Shahzaib Ali   +6 more
wiley   +1 more source

Solvent‐Desorption‐Induced Formation of a Long‐Period Polymorph Yielding a High‐Performance Porphyrin‐Based Organic Semiconductor

open access: yesAdvanced Science, EarlyView.
Solvent‐desorption‐induced structural transformation of 5,15‐bisphenyl‐tetrabenzoporphyrin generates a long‐period polymorph, in which the π‐stacking direction rotates by 90° between adjacent layers within the crystal while largely retaining crystallographic integrity.
Kazuya Miyazaki   +7 more
wiley   +1 more source

Non-Covalent Interactions and Helical Packing in Thiophene-Phenylene Copolymers: Tuning Solid-State Ordering and Charge Transport for Organic Field-Effect Transistors. [PDF]

open access: yesChem Mater
Makala M   +10 more
europepmc   +1 more source

Highly Stable and Non‐Volatile Optoelectronic Synapses for Sensing, Memory, and Computing Enabled by a Deep‐Potential Floating Gate

open access: yesAdvanced Science, EarlyView.
A deep‐potential metal floating gate integrates electrical programming, optical partial erasure, and synaptic weight modulation in a MoS2/h‐BN/Au transistor. The device provides a 97.6 V memory window, retention beyond 3000 s, endurance over 1600 cycles, and reproducible operation after 200 days of ambient storage.
Shuo Lei   +6 more
wiley   +1 more source

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