Results 111 to 120 of about 17,076,124 (292)

Electropolymerized Aptasensor for Femtogram‐Level Cytokine Detection

open access: yesAdvanced Materials, EarlyView.
Electropolymerization of 3‐amino‐ʟ‐tyrosine creates ultrathin, smooth, and chemically robust pALT nanofilms with accessible carboxyl functionalities for direct aptamer immobilization. Integrated with fiber‐optic SPR and OECT platforms, these interfaces enable IL‐6 detection down to 100 fg mL−1 and provide a versatile route to bioelectronic sensing ...
Jiyao Yu   +7 more
wiley   +1 more source

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

open access: yesAdvanced Materials, EarlyView.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi   +12 more
wiley   +1 more source

Descriptors to Dynamics: A Materials and Device Perspective on in‐Materio Physical Reservoir Computing for Neuromorphic Edge Intelligence

open access: yesAdvanced Materials, EarlyView.
Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh   +5 more
wiley   +1 more source

Hybrid molecular electronic (HME) transistor based on deoxyguanosine derivatives

open access: yes, 2003
Organic Field Effect Transistors II. Edited by Dimitrakopoulos, Christos D.
Giovanni Gottarelli   +26 more
core   +1 more source

Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography

open access: yesAdvanced Materials, EarlyView.
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh   +9 more
wiley   +1 more source

Poly(Alkoxythiophene) Rod‐Coil Block Copolymers for Organic Electrochemical Transistors

open access: yesAdvanced Materials, EarlyView.
We present the first synthesis of poly(3‐alkoxythiophene) rod‐coil block copolymers as a new architecture for OMIECs. Incorporating PEG and PLLA coils can enhance device performance beyond the homopolymer. The figure‐of‐merit depends uniquely on coil length.
Junfu Tian   +23 more
wiley   +1 more source

Lithography‐Compatible Conductive Metal–Organic Frameworks for Scalable Electronics

open access: yesAdvanced Materials, EarlyView.
Conductive MOF thin films are integrated as gate electrodes in semiconductor devices through a photolithography‐compatible patterning strategy. CVD‐grown 2D MOF thin films enable stable operation across bottom‐gate MoS2/MoTe2 field‐effect transistors and top‐gate IGZO arrays, highlighting the potential of conductive MOFs as functional electronic ...
Hyeonwoo Lee   +9 more
wiley   +1 more source

Imide Substitution Drives the Supramolecular Assembly of Perylene Diimide Into Laterally Modulated Metallic/Semiconducting Molecular Patterns

open access: yesAdvanced Materials Interfaces, EarlyView.
Imide substitution with bulky 2,6‐isopropylphenyl groups induces perylene diimide to self‐assemble on Ag(111) into a monolayer with two coexisting adsorption heights. Molecules closer to the substrate gain metallic character due to charge transfer from the metal, while farther ones remain decoupled and semiconducting.
Giacomo Agnesod   +12 more
wiley   +1 more source

Electrical characteristics of top-down ZnO nanowire transistors using remote plasma ALD

open access: yes
Top-down fabrication is used to produce ZnO nanowires by remote plasma atomic layer deposition over a SiO2 pillar and anisotropic dry etching. Nanowire field-effect transistors (FETs), with channel lengths in the range of 1.3–18.6 µm, are then fabricated
Masaud, T.B.   +9 more
core   +1 more source

Probing the Architecture of Organic Heterojunctions Based on Zn(Salen)‐Type/Lu(Bis‐phthalocyanine) Complexes and Their Potential Application as Gas Sensors

open access: yesAdvanced Materials Interfaces, EarlyView.
Planar bilayer heterojunctions are fabricated from two molecular materials and compared to solution‐processed bulk heterojunctions. Raman spectroscopy and conductive AFM studies reveal the formation of conductive pillar‐like structures within a poorly conductive matrix.
Agostino Attinà   +6 more
wiley   +1 more source

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