Results 101 to 110 of about 17,076,184 (291)

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

open access: yesAdvanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen   +7 more
wiley   +1 more source

Resolving the High‐k Paradox in Organic Field‐Effect Transistors Through Rational Dielectric Design

open access: yesAdvanced Electronic Materials
Dielectric materials with high relative permittivity, i.e., high‐k dielectrics, are in great demand for application as gate dielectric for the development of field‐effect transistors operating at low voltages.
Beomjin Jeong, Kamal Asadi
doaj   +1 more source

CVD Grown Hybrid MoSe2–WSe2 Lateral/Vertical Heterostructures With Strong Interlayer Exciton Emission

open access: yesAdvanced Materials, EarlyView.
A scalable bottom‐up CVD methodology, based on liquid transition metal salt precursors, is presented for the controlled growth of two high‐quality MoSe2–WSe2 heterostructures (HSs): purely lateral (HS I) and hybrid lateral/vertical (HS II), by simply adjusting precursor concentration.
Md Tarik Hossain   +16 more
wiley   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

open access: yesAdvanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho   +17 more
wiley   +1 more source

High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

open access: yesAdvanced Science, 2017
Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐
Wen Li   +8 more
doaj   +1 more source

Multifunctional organic field-effect transistors

open access: yes
Organic field-effect transistors (OFETs) enable large-area, flexible and wearable electronics. One promising approach to introduce additional functionalities for sensing and memory applications into these devices is the introduction of molecular photoswitches.
openaire   +2 more sources

Contactless charge carrier mobility measurement in organic field-effect transistors [PDF]

open access: yes, 2014
With the increasing performance of organic semiconductors, contact resistances become an almost fundamental problem, obstructing the accurate measurement of charge carrier mobilities. Here, a generally applicable method is presented to determine the true
Roelofs, W.   +23 more
core   +2 more sources

Electropolymerized Aptasensor for Femtogram‐Level Cytokine Detection

open access: yesAdvanced Materials, EarlyView.
Electropolymerization of 3‐amino‐ʟ‐tyrosine creates ultrathin, smooth, and chemically robust pALT nanofilms with accessible carboxyl functionalities for direct aptamer immobilization. Integrated with fiber‐optic SPR and OECT platforms, these interfaces enable IL‐6 detection down to 100 fg mL−1 and provide a versatile route to bioelectronic sensing ...
Jiyao Yu   +7 more
wiley   +1 more source

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

open access: yesAdvanced Materials, EarlyView.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi   +12 more
wiley   +1 more source

Descriptors to Dynamics: A Materials and Device Perspective on in‐Materio Physical Reservoir Computing for Neuromorphic Edge Intelligence

open access: yesAdvanced Materials, EarlyView.
Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh   +5 more
wiley   +1 more source

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