Results 111 to 120 of about 17,076,184 (291)

Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography

Advanced Materials, EarlyView.
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh, Min Gu Lee, Hwayoung Kim, Myeongchan Ko, Jungwan Noh, Taewook Go, Jingyao Yu, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +9 more
wiley   +1 more source

Poly(Alkoxythiophene) Rod‐Coil Block Copolymers for Organic Electrochemical Transistors

Advanced Materials, EarlyView.
We present the first synthesis of poly(3‐alkoxythiophene) rod‐coil block copolymers as a new architecture for OMIECs. Incorporating PEG and PLLA coils can enhance device performance beyond the homopolymer. The figure‐of‐merit depends uniquely on coil length.
Junfu Tian, Wentao Shan, Rachael Found, Paola Mantegazza, Francesco Leoni, Andreas W. Erhardt, Yuyun Yao, Matus Stredansky, Arianna Magni, Adam Marks, Elena Chulanova, Zeinab Hamid, Yueying Huang, Wanpeng Lu, Xian'e Li, Baopu Zhang, Qingpei Wan, Christina Kousseff, Matilde Concilio, Ruth Theresia Arwani, Caroline A. Ross, Sahika Inal, Giovanni Costantini, Iain McCulloch   +23 more
wiley   +1 more source

Hybrid molecular electronic (HME) transistor based on deoxyguanosine derivatives

, 2003
Organic Field Effect Transistors II. Edited by Dimitrakopoulos, Christos D.
Giovanni Gottarelli, Stefano D'Amico, Stefano Masiero, A. Biasco, BIASCO, Adriana Lucia Angela, R. Cingolani, P. Visconti, ARIMA, VALENTINA, T. Giorgi, Adriana Biasco, VISCONTI, Paolo, Ross Rinaldi, RINALDI, Rosaria, D'AMICO, STEFANO, Paolo Visconti, Valentina Arima, Tatiana Giorgi, E. D’Amone, Giuseppe Maruccio, V. Arima, G. Gottarelli, MARUCCIO, Giuseppe, Roberto Cingolani, Eliana D'Amone, G. Maruccio, CINGOLANI, Roberto, S. Masiero   +26 more
core   +1 more source

Lithography‐Compatible Conductive Metal–Organic Frameworks for Scalable Electronics

Advanced Materials, EarlyView.
Conductive MOF thin films are integrated as gate electrodes in semiconductor devices through a photolithography‐compatible patterning strategy. CVD‐grown 2D MOF thin films enable stable operation across bottom‐gate MoS2/MoTe2 field‐effect transistors and top‐gate IGZO arrays, highlighting the potential of conductive MOFs as functional electronic ...
Hyeonwoo Lee, Han Joo Lee, Myeonggeun Choe, Jeehong Park, Yeonjin Yi, Seongil Im, Suk Hyun Park, Hee Cheul Choi, Ji Hoon Park, Sarah S. Park   +9 more
wiley   +1 more source

Bioinspired Mechanosensitive Organic Artificial Neuron With Programmable Excitatory and Inhibitory Responses via Nonlinear Mechano‐Electrochemical Coupling

Advanced Materials, EarlyView.
Organic artificial neurons couple mechanical deformation and ionic environments through nonlinear mechano‐electrochemical dynamics. Mechanical strain and electrolyte concentration reshape their nonlinear electrical characteristics, programming excitatory or inhibitory spiking responses that mimic mechanosensitive biological neurons and enable ...
Rassen Boukraa, Pietro Belleri, Zsolt M. Kovács‐Vajna, Paschalis Gkoupidenis, Fabrizio Torricelli   +4 more
wiley   +1 more source

Probing the Architecture of Organic Heterojunctions Based on Zn(Salen)‐Type/Lu(Bis‐phthalocyanine) Complexes and Their Potential Application as Gas Sensors

Advanced Materials Interfaces, EarlyView.
Planar bilayer heterojunctions are fabricated from two molecular materials and compared to solution‐processed bulk heterojunctions. Raman spectroscopy and conductive AFM studies reveal the formation of conductive pillar‐like structures within a poorly conductive matrix.
Agostino Attinà, Petr Bečvár, Martin Hruska, Rita Meunier‐Prest, Eric Lesniewska, Santo Di Bella, Marcel Bouvet   +6 more
wiley   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

Electrical characteristics of top-down ZnO nanowire transistors using remote plasma ALD

Top-down fabrication is used to produce ZnO nanowires by remote plasma atomic layer deposition over a SiO2 pillar and anisotropic dry etching. Nanowire field-effect transistors (FETs), with channel lengths in the range of 1.3–18.6 µm, are then fabricated
Masaud, T.B., Ashburn, P., Fang, Q., Gunn, R., Allen, M. W., Partridge, J., Clark, O.D., Sultan, S.M., Sun, K., Chong, H.M.H.   +9 more
core   +1 more source

Advances in Halide Perovskites for Photon Radiation Detectors

Advanced Materials Technologies, EarlyView.
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang, Jieqi Wang, Xiaojun Cui, Carsten Ronning   +3 more
wiley   +1 more source

Soluble derivatives of perylene and naphthalene diimide for n-channel organic field-effect transistors

, 2006
Solution-processed n-type organic field-effect transistors (OFETs) have been fabricated using soluble derivatives of perylene diimide and naphthalene diimide.
Icli, S., Turkmen, G., Guenes, Serap, Kuban, B., Singh, Th. B., Erten, S., Zafer, C., Sariciftci, N. S., Teoman, Y., Guenes, S.   +9 more
core   +1 more source